Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs

2003 ◽  
Vol 24 (6) ◽  
pp. 414-416 ◽  
Author(s):  
V. Kilchytska ◽  
D. Levacq ◽  
D. Lederer ◽  
J.-P. Raskin ◽  
D. Flandre
Keyword(s):  
Small Signal ◽  
Back Gate ◽  
Gate Effect ◽  
Signal Output ◽  
Output Conductance

Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs

2012 ◽  
Vol 71 ◽  
pp. 93-100 ◽  
Author(s):  
S. Makovejev ◽  
J.-P. Raskin ◽  
M.K. Md Arshad ◽  
D. Flandre ◽  
S. Olsen ◽  
...  
Keyword(s):  
Small Signal ◽  
Substrate Effects ◽  
Self Heating ◽  
Signal Output ◽  
Output Conductance

Frequency Variation of the Small-Signal Output Conductance of Decananometer MOSFETs Due to Substrate Crosstalk

2007 ◽  
Vol 28 (5) ◽  
pp. 419-421 ◽  
Author(s):  
Valeria Kilchytska ◽  
Guillaume Pailloncy ◽  
Dimitri Lederer ◽  
Jean-Pierre Raskin ◽  
Nadine Collaert ◽  
...  
Keyword(s):  
Frequency Variation ◽  
Small Signal ◽  
Signal Output ◽  
Output Conductance

Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

2005 ◽  
Vol 52 (7) ◽  
pp. 1649-1655 ◽  
Author(s):  
S. Schwantes ◽  
T. Florian ◽  
T. Stephan ◽  
M. Graf ◽  
V. Dudek
Keyword(s):  
High Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Author(s):  
Stefan Schwantes ◽  
Josef Furthaler ◽  
Bernd Schauwecker ◽  
Franz Dietz ◽  
Michael Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

Analysis of the Back-Gate Effect on the on-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Vol 6 (3) ◽  
pp. 377-385 ◽  
Author(s):  
S. Schwantes ◽  
J. Furthaler ◽  
B. Schauwecker ◽  
F. Dietz ◽  
M. Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

Back-Gate Effect on $R_{\mathrm {{\mathrm{{\scriptscriptstyle ON}},sp}}}$ and BV for Thin Layer SOI Field p-Channel LDMOS

2015 ◽  
Vol 62 (4) ◽  
pp. 1098-1104 ◽  
Author(s):  
Xin Zhou ◽  
Ming Qiao ◽  
Yitao He ◽  
Zhuo Wang ◽  
Zhaoji Li ◽  
...  
Keyword(s):  
Thin Layer ◽  
Back Gate ◽  
Gate Effect

scholarly journals A novel supply voltage compensation circuit for the inverter switching point

2017 ◽  
Vol 30 (4) ◽  
pp. 627-638 ◽  
Author(s):  
Alexandru-Mihai Antonescu ◽  
Lidia Dobrescu
Keyword(s):  
Supply Voltage ◽  
Switching Point ◽  
Compensation Circuit ◽  
Back Gate ◽  
Voltage Range ◽  
Voltage Variation ◽  
Voltage Change ◽  
Gate Effect ◽  
Voltage Compensation

The present work proposes an innovative circuit that is able to compensate the inverter switching point voltage variation due to supply voltage change. The circuit is designed to work for a 1.6V to 2V supply voltage range. The operation principle includes the back gate effect and an original transistor switching.

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