scholarly journals A novel supply voltage compensation circuit for the inverter switching point

2017 ◽  
Vol 30 (4) ◽  
pp. 627-638 ◽  
Author(s):  
Alexandru-Mihai Antonescu ◽  
Lidia Dobrescu
Keyword(s):  
Supply Voltage ◽  
Switching Point ◽  
Compensation Circuit ◽  
Back Gate ◽  
Voltage Range ◽  
Voltage Variation ◽  
Voltage Change ◽  
Gate Effect ◽  
Voltage Compensation

The present work proposes an innovative circuit that is able to compensate the inverter switching point voltage variation due to supply voltage change. The circuit is designed to work for a 1.6V to 2V supply voltage range. The operation principle includes the back gate effect and an original transistor switching.

Compact CMOS Analog Multiplier Free of Voltage Reference Generators

2020 ◽  
Vol 15 (3) ◽  
pp. 1-12
Author(s):  
Ana Isabela Araújo Cunha ◽  
Antonio José Sobrinho De Sousa ◽  
Edson Pinto Santana ◽  
Robson Nunes De Lima ◽  
Fabian Souza De Andrade ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Harmonic Distortion ◽  
Current Mode ◽  
Input Voltage ◽  
Voltage Reference ◽  
Analog Multiplier ◽  
Voltage Range ◽  
Voltage Variation ◽  
Static Power ◽  
Four Quadrant

This work presents a CMOS four quadrant analog multiplier architecture for application as the synapse element in analog cellular neural networks. For this reason, the circuit has voltage-mode inputs and a current-mode output and the chief design targets are compactness and low energy consumption. A signal application method is proposed that avoids voltage reference generators, which contributes to reduce sensitivity to supply voltage variation. Performance analysis through simulation has been accomplished for a design in CMOS 130 nm technology with 163 µm2 total active area. The circuit features ±50 mV input voltage range, 86 µW static power and ‑28.4 dB maximum total harmonic distortion. A simple technique for manual calibration is also presented.

scholarly journals Body-Effect-Free OLED-on-Silicon Pixel Circuit Based on Capacitive Division to Extend Data Voltage Range

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2351
Author(s):  
Jina Bae ◽  
Hyoungsik Nam
Keyword(s):  
Threshold Voltage ◽  
Supply Voltage ◽  
The Body ◽  
Body Effect ◽  
Voltage Range ◽  
Error Range ◽  
Large Current ◽  
Voltage Variation ◽  
Current Error ◽  
Node Voltage

This paper proposes an OLED pixel compensation circuit that copes with threshold voltage variation, narrow data voltage range, and body effect on a backplane of silicon-based transistors. It consists of six PMOS transistors and two capacitors. The data voltage range is extended by the capacitor division with two capacitors, and the connection of both source and gate nodes to the supply voltage makes the driving transistor free from the body effect. In addition, the reference voltage is used to initialize the gate node voltage of the driving transistor as well as to adjust the data voltage region. By the SPICE simulation, it is verified that the current error over the threshold voltage variations of ±10 mV is reduced to be −1.200% to 0.964% at the maximum current range of around 8 nA, and the data voltage range is extended to 3.4 V, compared to the large current error range from −21.46% to 27.36% and the data voltage range of 0.41 V in the basic 2T1C circuit. In addition, the body-effect-free circuit outperforms the latest 4T1C circuit of the current error range from −3.279% to 3.388%.

scholarly journals Intracellular recordings from gecko photoreceptors during light and dark adaptation.

1975 ◽  
Vol 66 (5) ◽  
pp. 617-648 ◽  
Author(s):  
J Kleinschmidt ◽  
J E Dowling
Keyword(s):  
Membrane Potential ◽  
Dark Adaptation ◽  
Horizontal Cell ◽  
Intracellular Recordings ◽  
Receptor Sensitivity ◽  
Intensity Curve ◽  
Voltage Range ◽  
Voltage Change ◽  
Sensitivity Change ◽  
Compression Treatment

Intracellular recordings were obtained from rods in the Gekko gekko retina and the adaptation characteristics of their responses studied during light and dark adaptation. Steady background illumination induced graded and sustained hyperpolarizing potentials and compressed the incremental voltage range of the receptor. Steady backgrounds also shifted the receptor's voltage-intensity curve along the intensity axis, and bright backgrounds lowered the saturation potential of the receptor. Increment thresholds of single receptors followed Weber's law over a range of about 3.5 log units and then saturated. Most of the receptor sensitivity change in light derived from the shift of the voltage-intensity curve, only little from the voltage compression. Treatment of the eyecup with sodium aspartate at concentrations sufficient to eliminate the beta-wave of the electroretinogram (ERG) abolished initial transients in the receptor response, possibly indicating the removal of horizontal cell feedback. Aspartate treatment, however, did not significantly alter the adaptation characteristics of receptor responses, indicating that they derive from processes intrinsic to the receptors. Dark adaptation after a strongly adapting stimulus was similarly associated with temporary elevation of membrane potential, initial lowering of the saturation potential, and shift of the voltage-intensity curve. Under all conditions of adaptation studied, small amplitude responses were linear with light intensity. Further, there was no unique relation between sensitivity and membrane potential suggesting that receptor sensitivity is controlled at least in part by a step of visual transduction preceding the generation of membrane voltage change.

Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

2005 ◽  
Vol 52 (7) ◽  
pp. 1649-1655 ◽  
Author(s):  
S. Schwantes ◽  
T. Florian ◽  
T. Stephan ◽  
M. Graf ◽  
V. Dudek
Keyword(s):  
High Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices

A 3.2ppm/°C curvature-compensated bandgap reference with wide supply voltage range

2012 ◽  
Vol 43 (11) ◽  
pp. 863-868 ◽  
Author(s):  
Ze-Kun Zhou ◽  
Xue-Chun Ou ◽  
Yue Shi ◽  
Pei-Sheng Zhu ◽  
Ying-Qian Ma ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Bandgap Reference ◽  
Voltage Range

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Author(s):  
Stefan Schwantes ◽  
Josef Furthaler ◽  
Bernd Schauwecker ◽  
Franz Dietz ◽  
Michael Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

A novel sourceline voltage compensation circuit for embedded NOR flash memory

2014 ◽  
Vol 35 (7) ◽  
pp. 075007
Author(s):  
Shengbo Zhang ◽  
Guangjun Yang ◽  
Jian Hu ◽  
Jun Xiao
Keyword(s):  
Flash Memory ◽  
Compensation Circuit ◽  
Voltage Compensation ◽  
Nor Flash
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