scholarly journals Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures

2005 ◽  
Vol 54 (11) ◽  
pp. 5367
Author(s):  
Xu Zhang-Cheng ◽  
Jia Guo-Zhi ◽  
Sun Liang ◽  
Yao Jiang-Hong ◽  
Xu Jing-Jun ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Time Resolved ◽  
Gaas Quantum Dot ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectroscopy of subwetting layer states in InGaAs∕GaAs quantum dot structures

2006 ◽  
Vol 100 (5) ◽  
pp. 054316 ◽  
Author(s):  
Yu. I. Mazur ◽  
B. L. Liang ◽  
Zh. M. Wang ◽  
D. Guzun ◽  
G. J. Salamo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Gaas Quantum Dot ◽  
Time Resolved Photoluminescence

InGaAs/GaAs quantum-dot–quantum-well heterostructure formed by submonolayer deposition

2003 ◽  
Vol 14 (12) ◽  
pp. 1259-1261 ◽  
Author(s):  
Zhangcheng Xu ◽  
Kristjan Leosson ◽  
Dan Birkedal ◽  
Vadim Lyssenko ◽  
Jørn M Hvam ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Gaas Quantum Dot

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

Time‐resolved photoluminescence study on AlxGa1−xAs spontaneous vertical quantum well structures

1996 ◽  
Vol 68 (23) ◽  
pp. 3221-3223 ◽  
Author(s):  
Noritaka Usami ◽  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Ryoichi Ito ◽  
Kentaro Onabe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Coherent Linewidths of Interfacial GaAs Quantum Dot Excitons and Incoherent Coupling from Quantum Well Excitons

2010 ◽  
Author(s):  
A. D. Bristow ◽  
G. Moody ◽  
M. E. Siemens ◽  
X. Dai ◽  
D. Karaiskaj ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Gaas Quantum Dot

Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Preliminary Data ◽  
Charge Separation ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Storage Times ◽  
Time Resolved Photoluminescence

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

2010 ◽  
Vol 96 (1) ◽  
pp. 011901 ◽  
Author(s):  
M. Syperek ◽  
P. Leszczyński ◽  
J. Misiewicz ◽  
E. M. Pavelescu ◽  
C. Gilfert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Tunnel Injection
Sign in / Sign up

Export Citation Format

Share Document