Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence

2014 ◽  
Vol 252 (5) ◽  
pp. 956-960 ◽  
Author(s):  
Lai Wang ◽  
Yuchen Xing ◽  
Zhibiao Hao ◽  
Yi Luo
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


1996 ◽  
Vol 68 (23) ◽  
pp. 3221-3223 ◽  
Author(s):  
Noritaka Usami ◽  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Ryoichi Ito ◽  
Kentaro Onabe ◽  
...  

2010 ◽  
Vol 96 (1) ◽  
pp. 011901 ◽  
Author(s):  
M. Syperek ◽  
P. Leszczyński ◽  
J. Misiewicz ◽  
E. M. Pavelescu ◽  
C. Gilfert ◽  
...  

1994 ◽  
Vol 49 (16) ◽  
pp. 11504-11507 ◽  
Author(s):  
P. J. Poole ◽  
S. Charbonneau ◽  
M. Fritze ◽  
A. V. Nurmikko

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