scholarly journals MICROSTRUCTURES OF THE MICRO-CRYSTALLINE SILICON THIN FILMS PREPARED BY HOT WIRE CHEMICAL DEPOSITION WITH HYDROGEN DILUTION

1998 ◽  
Vol 47 (9) ◽  
pp. 1542
Author(s):  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
LIU JIN-LONG ◽  
HAN YI-QIN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Chemical Deposition ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

scholarly journals Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth

2009 ◽  
Vol 58 (1) ◽  
pp. 565
Author(s):  
Qiu Sheng-Hua ◽  
Chen Cheng-Zhao ◽  
Liu Cui-Qing ◽  
Wu Yuan-Dan ◽  
Li Ping ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Fast Growth ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Nano Crystalline

Hydrogen Dilution Effect on the Crystallinity of Silicon Films Grow by Hot Wire Cell Method

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Ichikawa ◽  
J. Takeshita ◽  
A. Yamada ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Polycrystalline Silicon ◽  
High Growth ◽  
Silicon Films ◽  
Hot Wire ◽  
Cell Method ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Polycrystalline Silicon Films

AbstractA new process, the Hot Wire Cell method, was developed and successfully used to grow polycrystalline silicon thin films at a low temperature and high growth rate. In the Hot Wire Cell method, reactant gases are decomposed as a result of reacting with a heated tungsten filament placed near to a substrate and polycrystalline silicon films can be deposited at a growth rate of 1.2nm/s without hydrogen dilution and 0.9nm/s with the use hydrogen dilution. The film crystallinity changed from amorphous to polycrystalline due to the addition of hydrogen, thus hydrogen dilution was effective for improving film crystallinity. Furthermore, we obtained (220) oriented polycrystalline silicon thin films with a 90% crystal fraction by the use of hydrogen dilution. These results showed that the Hot Wire Cell method is promising for the deposition of device-grade polycrystalline silicon films for photovoltaic applications.

Quantitative photopyroelectric out-of-phase spectroscopy of amorphous silicon thin films deposited on crystalline silicon

1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Dynamic Range ◽  
Crystalline Silicon ◽  
Optical Absorption Coefficient ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Background Compensation

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.

scholarly journals Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

2014 ◽  
Vol 105 (2) ◽  
pp. 022108 ◽  
Author(s):  
S. Steffens ◽  
C. Becker ◽  
D. Amkreutz ◽  
A. Klossek ◽  
M. Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Electrical Performance ◽  
Dangling Bond ◽  
Silicon Thin Films

Structure and Optoelectronic Properties as a Function of Hydrogen Dilution of Micro-Crystalline Silicon Films Prepared by Hot Wire Chemical Vapor Deposition

1999 ◽  
Vol 557 ◽  
Author(s):  
Guozhen Yue ◽  
Jing Lin ◽  
Qi Wang ◽  
Daxing Han
Keyword(s):  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Peak Position ◽  
Initial Growth ◽  
Hot Wire ◽  
Dilution Ratio ◽  
Structure Transition ◽  
Transparent Substrate ◽  
Hydrogen Dilution ◽  
Substrate Side

AbstractFilms prepared by hot wire CVD using H dilution ratio, R=H 2/SiH4, from 1 to 20 were studied by X-ray, Raman, PL, and conductivity measurements. We found that (a) when the dilution ratio reached R=3, the structure transition from amorphous to microcrystalline growth occured; meanwhile, PL spectrum showed a dual-peak at 1.3 and 1.0 eV; (b) the total intensity, band width, and peak position of the low energy PL band decreased with increasing H dilution; (c) both the Raman and PL measured from the transparent substrate side showed that initial growth tends to be amorphous and a portion of μc-Si was formed when R ≥ 5; and (d) the conductivity activation energy first decreased from 0.68 to 0.15 eV when the film transition from a- to μc-Si; then increased slightly with increasing μc-Si fraction. The results demonstrate that the variation of the H-dilution ratio has significant effects on both the film structures and the optoelectric properties.

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