Hydrogen Dilution Effect on the Crystallinity of Silicon Films Grow by Hot Wire Cell Method

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Ichikawa ◽  
J. Takeshita ◽  
A. Yamada ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Polycrystalline Silicon ◽  
High Growth ◽  
Silicon Films ◽  
Hot Wire ◽  
Cell Method ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Polycrystalline Silicon Films

AbstractA new process, the Hot Wire Cell method, was developed and successfully used to grow polycrystalline silicon thin films at a low temperature and high growth rate. In the Hot Wire Cell method, reactant gases are decomposed as a result of reacting with a heated tungsten filament placed near to a substrate and polycrystalline silicon films can be deposited at a growth rate of 1.2nm/s without hydrogen dilution and 0.9nm/s with the use hydrogen dilution. The film crystallinity changed from amorphous to polycrystalline due to the addition of hydrogen, thus hydrogen dilution was effective for improving film crystallinity. Furthermore, we obtained (220) oriented polycrystalline silicon thin films with a 90% crystal fraction by the use of hydrogen dilution. These results showed that the Hot Wire Cell method is promising for the deposition of device-grade polycrystalline silicon films for photovoltaic applications.

Low Temperature Deposition of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method

1998 ◽  
Vol 536 ◽  
Author(s):  
M. Ichikawa ◽  
J. Takeshita ◽  
A. Yamada ◽  
M. Konagai
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
High Growth ◽  
Columnar Structure ◽  
High Growth Rate ◽  
Silicon Films ◽  
Hot Wire ◽  
Cross Sectional ◽  
Cell Method ◽  
Polycrystalline Silicon Films

AbstractHot wire (HW) cell method has been newly developed and successfully applied to grow polycrystalline silicon films at a low temperature with a relatively high growth rate. In the HWcell method, silane is decomposed by reaction with a heated tungsten wire placed near the substrate. It is found that polycrystalline silicon films can be obtained at substrate temperatures of 175-400°C without hydrogen dilution. The film crystallinity is changed from polycrystalline to amorphous with decreasing the total pressure. The X-ray analysis clearly showed that the films grown at the filament temperature of 1700°C have a very strong (220) preferential orientation. The films consist of large grains as well as small grains, and it was found from cross-sectional SEM that the films have columnar structure. These results suggested that the HW-cell method would be a promising candidate to grow device-grade polycrystalline silicon films for photovoltaic application.

Fast Deposition of Polycrystalline Silicon Films by Hot-Wire CVD

1995 ◽  
Vol 377 ◽  
Author(s):  
A. R. Middya ◽  
A. Lloret ◽  
J. Perrin ◽  
J. Huc ◽  
J. L. Moncel ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Polycrystalline Silicon ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Crystalline Orientation ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Si Films ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon thin films have been deposited at fast growth rates (50 Å/s) by hotwire chemical vapour deposition (HW-CVD) from SiH4/H2 gas mixtures at low substrate temperature (400–500°C). The surface morphology of these films consists of 0.5 – 2.0μm dendritic grains as seen by electron microscopy. The films have a columnar morphology with grains starting from the substrate either on glass or c-Si. Even the 150 nm thick initial layer is polycrystalline. The preferential crystalline orientation of the poly-Si film is apparently not governed by the radiative source but strongly depends on the type and orientation of the substrate. A strong hydrogen dilution (>90%) of silane is essential to obtain poly-Si films with optimal crystalline structure.

High-rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane

2001 ◽  
Vol 66 (1-4) ◽  
pp. 225-230 ◽  
Author(s):  
Mitsuru Ichikawa ◽  
Takeshi Tsushima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
High Rate ◽  
Hot Wire ◽  
Cell Method ◽  
Silicon Thin Films

High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method

1999 ◽  
Vol 38 (Part 2, No. 1A/B) ◽  
pp. L24-L26 ◽  
Author(s):  
Mitsuru Ichikawa ◽  
Jun Takeshita ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Polycrystalline Silicon ◽  
High Deposition Rate ◽  
Hot Wire ◽  
Cell Method ◽  
Silicon Thin Films

Redistribution of Ion Implanted Hydrogen in Polycrystalline Silicon Thin Films

1985 ◽  
Vol 59 ◽  
Author(s):  
Ronald N. Legge ◽  
James F. Brown
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Spreading Resistance ◽  
Silicon Thin Films ◽  
Polycrystalline Silicon Films ◽  
Diffusion Of Hydrogen ◽  
Ion Implanted

ABSTRACTThe effect of implanted hydrogen on the resistivity of polycrystalline silicon films has been investigated. The observed reduction in resistivity due to hydrogen is most pronounced for lightly doped films, and is accentuated by a 450°C anneal. An increase in Hall mobility is also observed. The pre-implant resistivity is completely recovered by annealling at 600°C. Diffusion of hydrogen at low temperatures is monitored by local resistivity changes detected with spreading resistance measurements.

scholarly journals Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films

2006 ◽  
Vol 55 (5) ◽  
pp. 2523
Author(s):  
Huang Rui ◽  
Lin Xuan-Ying ◽  
Yu Yun-Peng ◽  
Lin Kui-Xun ◽  
Zhu Zu-Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Hydrogen Dilution ◽  
Polycrystalline Silicon Films
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