scholarly journals Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

2014 ◽  
Vol 105 (2) ◽  
pp. 022108 ◽  
Author(s):  
S. Steffens ◽  
C. Becker ◽  
D. Amkreutz ◽  
A. Klossek ◽  
M. Kittler ◽  
...  
1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.


2009 ◽  
Vol 58 (1) ◽  
pp. 565
Author(s):  
Qiu Sheng-Hua ◽  
Chen Cheng-Zhao ◽  
Liu Cui-Qing ◽  
Wu Yuan-Dan ◽  
Li Ping ◽  
...  

2006 ◽  
Vol 501 (1-2) ◽  
pp. 113-116 ◽  
Author(s):  
Bingqing Zhou ◽  
Fengzhen Liu ◽  
Jinhua Gu ◽  
Qunfang Zhang ◽  
Yuqin Zhou ◽  
...  

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3844-3846 ◽  
Author(s):  
S.F. Chen ◽  
Y.K. Fang ◽  
T.H. Lee ◽  
C.Y. Lin ◽  
P.J. Lin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document