scholarly journals STUDY OF BORON-DOPED DIAMOND FILMS BY HOT FILAMENT CVD

1996 ◽  
Vol 45 (10) ◽  
pp. 1771
Author(s):  
LIAO KE-JUN ◽  
WANG WAN-LU ◽  
ZHANG ZHEN-GANG ◽  
WU BIN
2004 ◽  
Vol 813 ◽  
Author(s):  
D. Ballutaud ◽  
A. Boutry-Forveille ◽  
J.-M. Laroche ◽  
N. Simon ◽  
H. Girard ◽  
...  

ABSTRACTHydrogen (deuterium used as tracer) diffusion experiments were performed on undoped and boron doped diamond films ([B] = 1019and 1020 cm−3) grown by plasma CVD or hot-filament assisted CVD. The samples were exposed either to a radiofrequency plasma or a microwave plasma at different temperatures between 400°C and 900°C. The deuterium profiles were analysed by secondary ion mass spectrometry (SIMS). The deuterium diffusion was explained mainly in term of trapping on intergranular defects. The passivation of boron acceptors, by B-D complex formation in the deuterium diffused superficial layers of the diamond films, was followed by electrochemical and mercury probe capacitance measurements. The results suggest a strong decrease of the free carrier density, which is in accordance with passivation of free carriers by deuterium trapping on dopant.


2011 ◽  
Vol 1282 ◽  
Author(s):  
Jerry Zimmer ◽  
Thomas Hantschel ◽  
Gerry Chandler ◽  
Andreas Schulze ◽  
Wilfried Vandervorst ◽  
...  

ABSTRACTBoron doped CVD diamond has been extensively studied in bulk form but little has been published regarding the effects that the initial seeding and growth conditions can have on the characteristics of the initial layer of diamond. This can have a dramatic effect on the performance of the film in applications ranging from AFM probe tips to electrodes used for water purification and other applications. This paper will examine how initial growth conditions and seeding methods can affect the film interface characteristics of doped diamond grown in hot filament CVD reactors.


1995 ◽  
Vol 10 (6) ◽  
pp. 1448-1454 ◽  
Author(s):  
E.N. Farabaugh ◽  
L. Robins ◽  
A. Feldman ◽  
Curtis E. Johnson

Boron-doped diamond films have been grown by the hot filament chemical vapor deposition process. The feed gas was a mixture of argon, bubbled through a solution of B2O3 in ethanol, and hydrogen. The highest growth rate was 0.7 μm/h. The boron concentration in the films depended on the concentration of B2O3 in the ethanol. The highest boron doping level, as measured by secondary ion mass spectroscopy, was 6300 atomic ppm. Raman spectroscopy and x-ray diffraction both confirmed the presence of crystalline diamond in the films. The frequency of the diamond Raman line decreased with increasing boron concentration. This shift may arise from an interaction of the charged carriers (holes) produced by the boron doping and the Raman-active optic phonon. The oxidation rates of doped and undoped films were measured by thermogravimetric analysis at 700 °C in flowing high purity oxygen. Films with a boron concentration of 6300 ppm oxidized at one-tenth the rate of undoped diamond. A layer of B2O3, detected on the surface of an oxidized B-doped film, is believed to act as a protective barrier that decreases the oxidation rate.


2012 ◽  
Vol 723 ◽  
pp. 280-285
Author(s):  
Liang Wang ◽  
Jian Guo Zhang ◽  
Bin Shen ◽  
Fang Hong Sun ◽  
Ming Chen

Boron-doped diamond films are deposited on cobalt cemented tungsten carbide (WC-Co) printed circuit board (PCB) milling tools using hot filament chemical vapor deposition (HFCVD) method. Trimethyl borate is used as boron source. Scanning electron microscope (SEM) and Raman spectroscopy are used to characterize the as-deposited diamond films. To evaluate the cutting performances of as-fabricated boron-doped diamond (BDD) coated milling tools, milling tests are conducted using copper-clad laminate(CCL)as the workpiece material, compared with microcrystalline diamond (MCD) coated and uncoated milling tools. The experimental results show that the BDD films have strong adhesive strength to the substrate and can protect the cutting edge from rapid wearing out. The results suggest that depositing BDD coating on WC-Co milling tools is a viable way to improve their cutting performances in machining of PCB materials.


2002 ◽  
Vol 11 (2) ◽  
pp. 153-159 ◽  
Author(s):  
Leide L.G Silva ◽  
Margareth K Franco ◽  
Fabiano Yokaichiya ◽  
Neidenei G Ferreira ◽  
Evaldo J Corat

2001 ◽  
Vol 10 (3-7) ◽  
pp. 750-754 ◽  
Author(s):  
N.G. Ferreira ◽  
E. Abramof ◽  
E.J. Corat ◽  
N.F. Leite ◽  
V.J. Trava-Airoldi

Sign in / Sign up

Export Citation Format

Share Document