Effect of Initial Growth and Seeding Conditions on Boron Doped Hot Filament Diamond Films

2011 ◽  
Vol 1282 ◽  
Author(s):  
Jerry Zimmer ◽  
Thomas Hantschel ◽  
Gerry Chandler ◽  
Andreas Schulze ◽  
Wilfried Vandervorst ◽  
...  

ABSTRACTBoron doped CVD diamond has been extensively studied in bulk form but little has been published regarding the effects that the initial seeding and growth conditions can have on the characteristics of the initial layer of diamond. This can have a dramatic effect on the performance of the film in applications ranging from AFM probe tips to electrodes used for water purification and other applications. This paper will examine how initial growth conditions and seeding methods can affect the film interface characteristics of doped diamond grown in hot filament CVD reactors.

2012 ◽  
Vol 18-19 ◽  
pp. 227-234
Author(s):  
J.A. Santos ◽  
V.F. Neto ◽  
D. Ruch ◽  
J. Grácio

Nanocrystalline diamond films, as other forms of diamond, possess a set of extreme properties, such as high thermal conductivity, hardness and resistance to hazard environments. Although an enormous focus has been placed into the deposition of nanocrystalline diamond films, most of this research uses microwave plasma assisted CVD systems. However, the growth conditions used in microwave systems cannot be directly used in hot-filament CVD systems. In this paper, it is meant to enlarge the knowledge of the process of depositing nanocrystalline films on different engineering materials, by means of hot-filament CVD systems. The coated materials include silicon (Si); titanium (Ti); tungsten carbide with cobalt as binder (WC-Co); and tungsten carbide with nickel as binder (WC-Ni). On the former two substrates, the diamond films were achieved on the bare substrates and with the use of an interlayer. The interlayers used were chromium nitride (CrN) and titanium aluminium nitride (TiAlN). Additionally, the as-grown films were characterized for hardness, quality and microstructure using scanning electron microscopy, Raman spectroscopy and nanohardness testing.


1996 ◽  
Vol 45 (10) ◽  
pp. 1771
Author(s):  
LIAO KE-JUN ◽  
WANG WAN-LU ◽  
ZHANG ZHEN-GANG ◽  
WU BIN

1996 ◽  
Vol 423 ◽  
Author(s):  
A. V. Khomich ◽  
V. I. Polyakov ◽  
P. I. Perov ◽  
V. P. Varnin ◽  
I. G. Teremetskaya ◽  
...  

AbstractThe effect of annealing in air on internal structure and optical properties of hot filament CVD nanocrystalline diamond films was investigated. Oxidation of the films lead to selective removal of intercrystallite layers with formation of highly porous structure with characteristic dimensions of several nanometers. Dramatic changes in optical transmission and Raman spectra were also observed. The origin of the two Raman spectrum maxima at 1140 and 500 cm−1 is discussed. Hydrogen absorption and desorption processes in porous diamond were studied.


1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  

1989 ◽  
Vol 28 (Part 2, No. 7) ◽  
pp. L1282-L1285 ◽  
Author(s):  
Yasutaka Takata ◽  
Kunishige Edamatsu ◽  
Toshihiko Yokoyama ◽  
Kazuhiko Seki ◽  
Masanao Tohnan ◽  
...  

2010 ◽  
Vol 16 (4-6) ◽  
pp. 127-135 ◽  
Author(s):  
Frederik Klauser ◽  
Doris Steinmüller-Nethl ◽  
Reinhard Kaindl ◽  
Erminald Bertel ◽  
Norbert Memmel

2004 ◽  
Vol 813 ◽  
Author(s):  
D. Ballutaud ◽  
A. Boutry-Forveille ◽  
J.-M. Laroche ◽  
N. Simon ◽  
H. Girard ◽  
...  

ABSTRACTHydrogen (deuterium used as tracer) diffusion experiments were performed on undoped and boron doped diamond films ([B] = 1019and 1020 cm−3) grown by plasma CVD or hot-filament assisted CVD. The samples were exposed either to a radiofrequency plasma or a microwave plasma at different temperatures between 400°C and 900°C. The deuterium profiles were analysed by secondary ion mass spectrometry (SIMS). The deuterium diffusion was explained mainly in term of trapping on intergranular defects. The passivation of boron acceptors, by B-D complex formation in the deuterium diffused superficial layers of the diamond films, was followed by electrochemical and mercury probe capacitance measurements. The results suggest a strong decrease of the free carrier density, which is in accordance with passivation of free carriers by deuterium trapping on dopant.


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