scholarly journals ELECTRONIC STRUCTURE OF BORON-VACANCY COMPLEX IN SILICON

1991 ◽  
Vol 40 (4) ◽  
pp. 616
Author(s):  
SHEN SAN-GUO ◽  
FAN XI-QING
Keyword(s):  
Electronic Structure ◽  
Vacancy Complex

scholarly journals Electronic structure of the phosphorus-vacancy complex in silicon: A resonant-bond model

2004 ◽  
Vol 70 (11) ◽  
Author(s):  
M. G. Ganchenkova ◽  
A. Yu. Kuznetsov ◽  
R. M. Nieminen
Keyword(s):  
Electronic Structure ◽  
Vacancy Complex ◽  
Bond Model

The electronic structure of the impurity boron‐vacancy complex in transition metal γ‐Fe

1992 ◽  
Vol 71 (1) ◽  
pp. 239-245 ◽  
Author(s):  
Chongyu Wang ◽  
Liqun Chen ◽  
Keng Li ◽  
Zhe Gao ◽  
Bing Wang
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Vacancy Complex

Electronic structure of light-impurity–vacancy complex cluster in iron

1988 ◽  
Vol 37 (18) ◽  
pp. 10510-10519 ◽  
Author(s):  
Chen Ying ◽  
Wang Chong-yu ◽  
Fu-sui Liu
Keyword(s):  
Electronic Structure ◽  
Light Impurity ◽  
Vacancy Complex ◽  
Complex Cluster

Electronic structure of the light-impurity (boron)–vacancy complex in iron

1988 ◽  
Vol 38 (6) ◽  
pp. 3905-3912 ◽  
Author(s):  
Wang Chongyu ◽  
An Feng ◽  
Gu Binglin ◽  
Fusui Liu ◽  
Chen Ying
Keyword(s):  
Electronic Structure ◽  
Light Impurity ◽  
Vacancy Complex

The Electronic Structure of the Oxygen-Vacancy Complex in Silicon

1986 ◽  
Vol 10-12 ◽  
pp. 875-880 ◽  
Author(s):  
R. Van Kemp ◽  
E.G. Sieverts ◽  
C.A.J. Ammerlaan
Keyword(s):  
Electronic Structure ◽  
Oxygen Vacancy ◽  
Vacancy Complex

Defect Identification in Silicon Using Electron Nuclear Double Resonance

1985 ◽  
Vol 46 ◽  
Author(s):  
C.A.J. Ammerlaan ◽  
M. Sprenger ◽  
R. Van Kemp ◽  
D.A. Van Wezep
Keyword(s):  
Electronic Structure ◽  
Point Defects ◽  
Double Resonance ◽  
Paramagnetic Centers ◽  
Electron Nuclear Double Resonance ◽  
Defect Identification ◽  
Vacancy Complex ◽  
Identification And Characterization ◽  
Atomic And Electronic Structure

AbstractThe application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.

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