Defect Identification in Silicon Using Electron Nuclear Double Resonance
Keyword(s):
AbstractThe application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
2011 ◽
2011 ◽
Vol 21
(4)
◽
pp. 272-278
◽
2008 ◽
Vol 129
(15)
◽
pp. 154502
◽
2014 ◽
Vol 118
(8)
◽
pp. 1384-1389
◽
1967 ◽
Vol 301
(1466)
◽
pp. 313-326
◽