Comment on “Microscopic Identification and Electronic Structure of a Di-Hydrogen–Vacancy Complex in Silicon by Optical Detection of Magnetic Resonance”

1998 ◽  
Vol 80 (2) ◽  
pp. 422-422 ◽  
Author(s):  
P. Stallinga ◽  
B. Bech Nielsen
Keyword(s):  
Electronic Structure ◽  
Magnetic Resonance ◽  
Optical Detection ◽  
Vacancy Complex ◽  
Microscopic Identification ◽  
Hydrogen Vacancy

Electronic Structure of Two Sulphur-Related Bound Excitions in Silicon Studied by Optical Detection of Magnetic Resonance

1989 ◽  
Vol 163 ◽  
Author(s):  
W.M. Chen ◽  
A. Henry ◽  
E. Janzén ◽  
B. Monemar ◽  
M.L.W. Thewalt
Keyword(s):  
Electronic Structure ◽  
Magnetic Resonance ◽  
Optical Detection ◽  
Magnetic Interaction ◽  
Complex Model ◽  
Critical Test ◽  
Weak Anisotropy ◽  
Single Defect ◽  
Spin Triplet

AbstractWe report an investigation on the electronic structure of two bound exciton (BE) systems from a complex defect in S-doped Si, by optical detection of magnetic resonance (ODMR). A spin-triplet (S=1) is identified to be the lowest electronic state of the BE's, which gives rise to deep photoluminescence (PL) emissions when recombining. A weak anisotropy of the magnetic interaction of the BE’s (not possible to resolve in Zeeman data) is revealed, which leads directly to the determination of the symmetry for the excited state of the defect. A S-related complex model is suggested as the identity of the defect. A critical test of two possible metastable configurations of the constituents of a single defect is undertaken.

Optical Detection of Magnetic Resonance (ODMR) Studies of the Electronic Structure of Complex Defects in GaP

1987 ◽  
Vol 104 ◽  
Author(s):  
W. M. Chen ◽  
M. Godlewski ◽  
B. Monemar ◽  
H. P. Gislason
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Magnetic Resonance ◽  
Optical Detection ◽  
Symmetry Structure

ABSTRACTOptical detection of magnetic resonance (ODMR) is applied to studies of neutral (“isoelectronic”) complex defects in GaP, via monitoring recombination of the excited bound exciton (BE) state associated with these defects. With examples of isoelectronic complex defects in GaP associated with C, Cu, Li and the PGa -antisite, it is shown how the ODMR data reveal the magnetic properties of both electrons and holes bound at such defects. The procedures to conclude on defect symmetry, structure and identity are also elucidated.

Electronic structure of .beta.-vinyl substituted phosphonium salts by carbon-13 nuclear magnetic resonance

1975 ◽  
Vol 40 (11) ◽  
pp. 1650-1652 ◽  
Author(s):  
Thomas A. Albright ◽  
Susan V. DeVoe ◽  
Walter J. Freeman ◽  
Edward E. Schweizer
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Electronic Structure ◽  
Magnetic Resonance ◽  
Phosphonium Salts ◽  
Nuclear Magnetic
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