MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUE
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2011 ◽
Vol 11
(5)
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pp. 3808-3813
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2005 ◽
Vol 20
(1)
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pp. 114-120
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2008 ◽
Vol 45
(sup6)
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pp. 78-80
1978 ◽
Vol 42
(8)
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pp. 769-775
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