scholarly journals Point defects and their physical properties in III-V Semiconductors (GaAs)

1986 ◽  
Vol 28 (2) ◽  
pp. 103-113
Author(s):  
Toshiaki IKOMA ◽  
Yasunori MOCHIZUKI
Keyword(s):  
Physical Properties ◽  
Point Defects

Some Physical Properties and Point Defects in Bi2 Te3−xSx Mixed Crystals

1984 ◽  
Vol 84 (2) ◽  
pp. K143-K147 ◽  
Author(s):  
P. Lošť??k ◽  
J. Horák ◽  
L. Koudelka
Keyword(s):  
Physical Properties ◽  
Point Defects ◽  
Mixed Crystals

Some physical properties and point defects in Bi2-xInxTe3 mixed crystals

1983 ◽  
Vol 76 (1) ◽  
pp. K71-K75 ◽  
Author(s):  
P. Lošťák ◽  
J. Horák ◽  
L. Koudelka
Keyword(s):  
Physical Properties ◽  
Point Defects ◽  
Mixed Crystals

scholarly journals Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations

2011 ◽  
Vol 75 (12) ◽  
pp. 657-664 ◽  
Author(s):  
Manabu Nishimoto ◽  
Kozo Nakamura ◽  
Masataka Hourai ◽  
Toshiaki Ono ◽  
Wataru Sugimura ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Physical Properties ◽  
High Precision ◽  
Point Defects ◽  
Silicon Crystal ◽  
Thermal Simulations

scholarly journals Radiation-doped SiC*/Si heterostructure formation and defects evolution

2022 ◽  
Vol 2155 (1) ◽  
pp. 012012
Author(s):  
V I Chepurnov ◽  
M V Dolgopolov ◽  
A V Gurskaya ◽  
G V Puzyrnaya ◽  
D E Elkhimov
Keyword(s):  
Silicon Carbide ◽  
Thin Layer ◽  
Physical Properties ◽  
Point Defects ◽  
Silicon Substrates ◽  
Structural Level ◽  
Association Models ◽  
Level 1 ◽  
Radionuclide Impurity

Abstract The authors consider heterostructures of silicon carbide obtained during endotaxy on silicon substrates. The question is raised in connection with the description of the endotaxy process itself at the structural level. Authors focus on the technological aspects of the formation of a stable β-SiC/Si heterostructure by endotaxy in relation to the evolution of point defects of various nature and their probable association models with the participation of a radionuclide impurity at the micro-alloying level: 1) the growth of the SiC*/Si thin layer with C-14 atoms in the doping process; 2) physical properties of defects formation; 3) some interface between properties and efficiency.

scholarly journals Tuning the electronic and magnetic properties of antimonene nanosheets via point defects and external fields: first-principles calculations

2019 ◽  
Vol 21 (20) ◽  
pp. 10552-10566 ◽  
Author(s):  
Asadollah Bafekry ◽  
Mitra Ghergherehchi ◽  
Saber Farjami Shayesteh
Keyword(s):  
Magnetic Properties ◽  
Physical Properties ◽  
Point Defects ◽  
First Principles ◽  
External Fields ◽  
First Principles Calculations ◽  
Electronic And Magnetic Properties ◽  
Fundamental Physical

Defects are inevitably present in materials, and their existence in a material strongly affects its fundamental physical properties.

The role of point defects in the physical properties of nonstoichiometric ceria

2007 ◽  
Vol 101 (4) ◽  
pp. 044906 ◽  
Author(s):  
Keith L. Duncan ◽  
Yanli Wang ◽  
Sean R. Bishop ◽  
Fereshteh Ebrahimi ◽  
Eric D. Wachsman
Keyword(s):  
Physical Properties ◽  
Point Defects

Determination of the Physical Properties of Point Defects in Silicon from Back‐Side Oxidation Experiments

1990 ◽  
Vol 137 (12) ◽  
pp. 3931-3934 ◽  
Author(s):  
M. Budil ◽  
M. Heinrich ◽  
M. Schrems ◽  
H. Pötzl
Keyword(s):  
Physical Properties ◽  
Point Defects ◽  
Back Side
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