Determination of the Physical Properties of Point Defects in Silicon from Back‐Side Oxidation Experiments

1990 ◽  
Vol 137 (12) ◽  
pp. 3931-3934 ◽  
Author(s):  
M. Budil ◽  
M. Heinrich ◽  
M. Schrems ◽  
H. Pötzl
Keyword(s):  
Physical Properties ◽  
Point Defects ◽  
Back Side

scholarly journals Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations

2011 ◽  
Vol 75 (12) ◽  
pp. 657-664 ◽  
Author(s):  
Manabu Nishimoto ◽  
Kozo Nakamura ◽  
Masataka Hourai ◽  
Toshiaki Ono ◽  
Wataru Sugimura ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Physical Properties ◽  
High Precision ◽  
Point Defects ◽  
Silicon Crystal ◽  
Thermal Simulations
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