scholarly journals Effect of Argon plasma and ion beam on the morphology and wettability of polyethylene terephthalate (PET)

2014 ◽  
Vol 6 (2) ◽  
pp. 18-26 ◽  
Author(s):  
Atta A. ◽  
M. Abdel Reheem A. ◽  
M. Abdel Rahman M.
2008 ◽  
Vol 92 (22) ◽  
pp. 221508 ◽  
Author(s):  
C. S. Corr ◽  
R. W. Boswell ◽  
C. Charles ◽  
J. Zanger

1999 ◽  
Vol 82 (4) ◽  
pp. 739-742 ◽  
Author(s):  
J. E. Bailey ◽  
H. K. Chung ◽  
A. L. Carlson ◽  
D. Cohen ◽  
D. J. Johnson ◽  
...  

2021 ◽  
Vol 2021 ◽  
pp. 1-5
Author(s):  
Walid Sahyouni ◽  
Alaa Nassif

The aim of the research is to examine the dependence of plasma pinch properties and radiation emissions on the atomic number of the operating gas within the dense plasma focus device (NX2) when using hydrogen and argon gases. Simulation was performed with Lee’s code on an NX2 dense plasma focus at a constant gas pressure value ( P 0 = 0.5   torr ). The results showed that the minimum radius of the plasma focus in the case of the hydrogen plasma pinch was 0.30 cm and in the case of the argon plasma pinch 0.17 cm, and this affected the value of the radiation emission as it was 7.8 × 10 − 6   J and 11 J for the hydrogen and argon pinch, respectively. The energy of the ion beam released by the breakdown of the plasma pinch was found as E n = 23.8   J in the state of hydrogen and E n = 105   J in the state of argon.


1996 ◽  
Vol 74 (3-4) ◽  
pp. 97-101
Author(s):  
C. D. Tucker ◽  
D. E. Brodie

Amorphous silicon carbide (a-Si:C) films were prepared by low-energy ion-beam-assisted deposition (IBAD) in an attempt to remove structural defects in the "lattice" and improve the electrical characteristics of the film. The ion beam was generated by electron cyclotron resonance from an ultra-high-purity argon plasma. The deposition environment was first evacuated to a very high vacuum to eliminate all but trace amounts of water vapour and other gases so that improvements in the electrical and (or) structural properties of the film would be attributable to the influence of the densification by ion bombardment and not to contaminants. The IBAD process does improve the film characteristics by reducing the density of localized states at the Fermi level and the porosity of the film. However, even though these films have the best electrical characteristics obtained thus far for these kind of films, none of them exhibited device quality and none were observed to be photoconducting. A large density (≈1 at.%) of implanted argon atoms may be limiting the reduction in the defect density that might otherwise be achievable.


2017 ◽  
Vol 381 ◽  
pp. 3-7
Author(s):  
Ko Shao Chen ◽  
Shao Hsuan Tsao ◽  
Rui Wen Sung ◽  
Ying Chen Ye ◽  
Bo Han Zeng ◽  
...  

Thermoplastic urethane (TPU) nonwoven is characterized by high elasticity, tensile strength, large elongation and structural stability and widely used in biomaterial. However, the hydrophobic nature of TPU nonwoven restricts its application. To improve surface hydrophilicity and hydrophobicity, the surface modification of materials is carried out by plasma treatment or ion-beam irradiation. According to the wettability treatment experiences that substrate usually using two processing or more to get one side hydrophilic and another side hydrophobic. In this study, use of cold plasma treatment in enhancing surface wettability of TPU nonwoven was studied. The surface properties of plasma treated films are characterized by Atomic Force Microscope (AFM), water contact angle measurement, and scanning electron microscopy (SEM). This study has demonstrated that Argon plasma treatment produces hydrophobic or hydrophilic surface on the TPU nonwoven. The method is performed by first placing a hydrophobic material on one side of substrate and bring this side to face the lower electrode. By controlling the RF power of the reactor, hydrophilic or hydrophobic surface can be prepared on the other side. This technique can be applied to wound dressing.


2002 ◽  
Vol 39 (3) ◽  
pp. 231-235 ◽  
Author(s):  
N. L. Singh ◽  
C. F. Desai ◽  
N. Shah ◽  
P. H. Soni ◽  
V. Shrinet ◽  
...  

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