scholarly journals Numerical Simulation and Compact Modeling of Thin Film Transistors for Future Flexible Electronics

2020 ◽  
Author(s):  
Arun Dev Dhar Dwivedi ◽  
Sushil Kumar Jain ◽  
Rajeev Dhar Dwivedi ◽  
Shubham Dadhich
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Compact Modeling

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

2018 ◽  
Vol 4 (7) ◽  
pp. 1800032 ◽  
Author(s):  
Cristina Fernandes ◽  
Ana Santa ◽  
Ângelo Santos ◽  
Pydi Bahubalindruni ◽  
Jonas Deuermeier ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

scholarly journals Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

2010 ◽  
Vol 13 (9) ◽  
pp. H313 ◽  
Author(s):  
A. L. Salas-Villasenor ◽  
I. Mejia ◽  
J. Hovarth ◽  
H. N. Alshareef ◽  
D. K. Cha ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Chalcogenide Thin Film

Thin Film Transistors for Flexible Electronics: Contacts, Dielectrics and Semiconductors

2011 ◽  
Vol 11 (6) ◽  
pp. 5532-5538 ◽  
Author(s):  
M. A. Quevedo-Lopez ◽  
W. T. Wondmagegn ◽  
H. N. Alshareef ◽  
R. Ramirez-Bon ◽  
B. E. Gnade
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors
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