High-mobility transparent amorphous metal oxide/nanostructure composite thin film transistors with enhanced-current paths for potential high-speed flexible electronics

2014 ◽  
Vol 2 (7) ◽  
pp. 1201-1208 ◽  
Author(s):  
Liu Xingqiang ◽  
Miao Jinshui ◽  
Liao Lei ◽  
Hu Weida
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
High Speed ◽  
High Mobility ◽  
Amorphous Metal ◽  
Composite Thin Film ◽  
Amorphous Metal Oxide

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

2018 ◽  
Vol 10 (31) ◽  
pp. 25866-25870 ◽  
Author(s):  
Hong-Chih Chen ◽  
Ting-Chang Chang ◽  
Wei-Chih Lai ◽  
Guan-Fu Chen ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Amorphous Metal ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Amorphous Metal Oxide

Ultra-Flexible, “Invisible” Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

2015 ◽  
Vol 27 (14) ◽  
pp. 2390-2399 ◽  
Author(s):  
Xinge Yu ◽  
Li Zeng ◽  
Nanjia Zhou ◽  
Peijun Guo ◽  
Fengyuan Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Amorphous Metal ◽  
Channel Layer ◽  
Amorphous Metal Oxide

Solution-Processed Rad-Hard Amorphous Metal-Oxide Thin-Film Transistors

2018 ◽  
Vol 28 (47) ◽  
pp. 1802717 ◽  
Author(s):  
Byungkyu Park ◽  
Dongil Ho ◽  
Guhyun Kwon ◽  
Dojeon Kim ◽  
Sung Yong Seo ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Amorphous Metal ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Amorphous Metal Oxide

scholarly journals Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

2021 ◽  
Author(s):  
Shun Watanabe ◽  
Xiaozhu Wei ◽  
Shohei Kumagai ◽  
Tatsuyuki Makita ◽  
Kotaro Tsuzuku ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
High Speed ◽  
High Mobility ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Ring Oscillators ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

Abstract Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility, p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements; however, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, conventionally make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS into the same substrates. In this work, we achieved a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with the stage propagation delay of 1.3 µs, which is the fastest operation among ever reported complementary ring oscillators based on solution-processed semiconductors.

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