scholarly journals Crystalline Silicon Nitride Films on Si(111): Growth Mechanism, Surface Structure and Chemistry down to Atomic Scale

2020 ◽  
Author(s):  
Subhashis Gangopadhyay
Keyword(s):  
Silicon Nitride ◽  
Surface Structure ◽  
Growth Mechanism ◽  
Crystalline Silicon ◽  
Atomic Scale ◽  
Silicon Nitride Films

Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
K. S. Grabowski ◽  
W. D. Coleman
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Flux Ratio ◽  
Film Structure ◽  
Atom Fraction ◽  
Silicon Nitride Films

AbstractSilicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

Molecular Dynamics Study of Nano-Tribological Properties of Silicon Nitride Films

2014 ◽  
Author(s):  
Longqiu Li ◽  
Shufeng Wang ◽  
Andrey Ovcharenko ◽  
Wuyi Wang
Keyword(s):  
Molecular Dynamics ◽  
Silicon Nitride ◽  
Friction Coefficient ◽  
Tribological Properties ◽  
Crystalline Silicon ◽  
High Hardness ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Friction Resistance ◽  
Silicon Nitride Films

Silicon nitride films were attracting extensive research interest in the past few decades as hard disk protective coating, especially the beta-silicon nitride (β-Si3N4) films and amorphous silicon nitride (SiNx) films, which have high hardness, chemical durability and low friction coefficient properties against wear, corrosion and reducing the friction resistance, respectively. Considerable efforts have been made in studying silicon nitride. However, it’s difficult to determine its nano-tribological properties experimentally since the results were affected by a lot of contact and environment conditions. The molecular dynamics (MD) simulation method is employed in this work. A rigid diamond sphere modeled as a spherical tip are sliding over a layered silicon nitride film substrate, respectively, to investigate the tribological properties of silicon nitride films. The effect of the relative sliding velocity and sliding direction, the normal force and the thickness of crystalline silicon nitride films on the friction coefficient of silicon nitride films were investigated.

Investigations of Silicon Nitride Films for Silicon Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
J. R. Elmiger ◽  
M. Kunst
Keyword(s):  
Silicon Nitride ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Deposition Process ◽  
Transient Signal ◽  
Strong Impact ◽  
Film Composition ◽  
Time Resolved ◽  
Silicon Nitride Films ◽  
On Line

AbstractSilicon nitride films on crystalline silicon were deposited in a low-temperature (< 400 °C ) Plasma Enhanced Chemical Vapour Deposition process. The deposition process is monitored with in situ Time Resolved Microwave Conductivity measurements leading to an on-line quality control of the deposited films. It is shown that at the start of the deposition there is a strong decrease of the lifetime of the measured transient signal due to plasma induced damage at the silicon surface. Afterwards an increase of the lifetime is observed due to passivation of the interface. For thin films (< 30 nm), the lifetime and the film composition depend on the film thickness. Furthermore, the film composition has a strong impact on the passivation of thick (100 nm ) silicon nitride films. The best passivation is obtained for almost stoichiometric films characterized by a refractive index of 1.95.

Dynamics And Morphology Of Cracks In Silicon Nitride Films: A Molecular Dynamics Study On Parallel Computers

1995 ◽  
Vol 409 ◽  
Author(s):  
Aiichiro Nakano ◽  
Rajiv K. Kalia ◽  
Priya Vashishta
Keyword(s):  
Molecular Dynamics ◽  
Silicon Nitride ◽  
Crack Propagation ◽  
Crystalline Silicon ◽  
Void Formation ◽  
Ceramic Materials ◽  
Parallel Computers ◽  
Kinetic Roughening ◽  
Fracture Surfaces ◽  
Silicon Nitride Films

AbstractMultiresolution molecular dynamics approach on parallel computers has been used to investigate fracture in ceramic materials. In microporous silica, critical behavior at fracture is analyzed in terms of pore percolation and kinetic roughening of fracture surfaces. Crack propagation in amorphous silicon nitride films is investigated, and a correlation between the speed of crack propagation and the morphology of fracture surfaces is observed. In crystalline silicon nitride films, temperature-assisted void formation in front of a crack tip slows down crack propagation.

scholarly journals High‐rate, low‐temperature deposition of multifunctional nano‐crystalline silicon nitride films

2010 ◽  
Vol 11 (3) ◽  
pp. 109-112
Author(s):  
Jae‐Dam Hwang ◽  
Kyoung‐Min Lee ◽  
Ki‐Su Keum ◽  
Youn‐Jin Lee ◽  
Wan‐Shick Hong
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Crystalline Silicon ◽  
High Rate ◽  
Silicon Nitride Films ◽  
Low Temperature Deposition ◽  
Nano Crystalline ◽  
Temperature Deposition
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