scholarly journals Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

2015 ◽  
Vol 118 (20) ◽  
pp. 205503 ◽  
Author(s):  
Benjamin F. Bory ◽  
Paulo R. F. Rocha ◽  
Henrique L. Gomes ◽  
Dago M. de Leeuw ◽  
Stefan C. J. Meskers
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Organic Semiconductor ◽  
Critical Phenomenon ◽  
Unipolar Resistive Switching

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

scholarly journals Switching Power Universality in Unipolar Resistive Switching Memories

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Jongmin Kim ◽  
Kyooho Jung ◽  
Yongmin Kim ◽  
Yongcheol Jo ◽  
Sangeun Cho ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Power ◽  
Unipolar Resistive Switching

scholarly journals Relationship between Resistive Switching Effect and Secondary Electron Yield in Transition Metal Oxide Films

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (7) ◽  
pp. 422-427
Author(s):  
Takatoshi YODA ◽  
Kentaro KINOSHITA ◽  
Kazufumi DOBASHI ◽  
Kenichi KITAMURA ◽  
Satoru KISHIDA
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Resistive Switching ◽  
Secondary Electron ◽  
Oxide Films ◽  
Transition Metal Oxide ◽  
Switching Effect ◽  
Metal Oxide Films ◽  
Secondary Electron Yield ◽  
Resistive Switching Effect
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