scholarly journals Analysis of Parasitic Effects in AIGaN/GaN HEMTs

10.5772/8762 ◽  
2010 ◽  
Author(s):  
Kazushige Horio
Keyword(s):  
Gan Hemts ◽  
Parasitic Effects

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

2009 ◽  
Vol 49 (9-11) ◽  
pp. 1216-1221 ◽  
Author(s):  
N. Malbert ◽  
N. Labat ◽  
A. Curutchet ◽  
C. Sury ◽  
V. Hoel ◽  
...  
Keyword(s):  
Failure Mechanisms ◽  
Gan Hemts ◽  
Parasitic Effects

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

ОСОБЕННОСТИ ПРОЕКТИРОВАНИЯ СВЧ-КЛЮЧЕЙ В РАЗНЫХ КОНСТРУКТИВНО-ТЕХНОЛОГИЧЕСКИХ БАЗИСАХ

2020 ◽  
Vol 96 (3s) ◽  
pp. 627-630
Author(s):  
А.Д. Калёнов ◽  
И.И. Мухин ◽  
В.В. Репин
Keyword(s):  
High Frequencies ◽  
Basic Parameters ◽  
Parasitic Effects ◽  
Soi Cmos

Представляется сравнение СВЧ-ключей, проектируемых в разных конструктивно-технологических базисах: КНИ, КМОП, биполярные и GaAs. Определенные трудности существуют при разработке ключей на сверхвысоких частотах, в разных технологиях необходимо учитывать различные эффекты. Наличие паразитных эффектов сильно осложняет разработку. В статье приводится оценка влияния паразитных эффектов на основные параметры СВЧ-ключей в разных конструктивно-технологических базисах. The paper offers a comparison of microwave keys designed in different structural and technological bases: SOI, CMOS, bipolar and GaAs. There are some difficulties in developing the keys to the ultra-high frequencies, in different technologies it is necessary to consider various effects. The presence of parasitic effects greatly complicates the development. The article provides an assessment of the influence of parasitic effects on the basic parameters of microwave keys in different structural and technological bases.

Sign in / Sign up

Export Citation Format

Share Document