scholarly journals High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

10.5772/65404 ◽  
2017 ◽  
Author(s):  
Hédi Fitouri ◽  
Mohamed Mourad Habchi ◽  
Ahmed Rebey
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films

Preparation and CO2 Gas Sensitive Properties of CuO-SrTiO3-Based Semiconductor Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 311-314 ◽  
Author(s):  
Yan Fei Gu ◽  
Hui Ming Ji ◽  
Bin Zhang ◽  
Ting Xian Xu
Keyword(s):  
Thin Films ◽  
Chelating Agents ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Good Resistance ◽  
Gas Sensitivity ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Ft Ir

CuO-SrTiO3-based thin films were prepared by novel sol-gel technology on Al2O3 substrates using Cu(NO3)2, SrCl2 and TiCl4 as the starting materials, critic acid and ethylene glycol as chelating agents. CO2 sensing properties of the films were investigated. Structure characteristics of the sol and asgrown thin films were analyzed by FT-IR spectrum, X-ray diffraction and SEM. The results reveal that the films consisted of CuO phase and SrTiO3 phase have nanocrystalline microstructure at 750°C for 40 min. The modified CuO-SrTiO3 thin films exhibit good resistance-temperature and gas sensitivity properties in a wide range of temperature. The films exposed to 6% CO2 show that sensitivity are 32, and response and recover time are within 2 s at 250 °C operating temperature.

High resolution X-ray diffraction investigation of epitaxially grown SrTiO 3 thin films by laser-MBE

2009 ◽  
Vol 33 (11) ◽  
pp. 949-953
Author(s):  
Zhai Zhang-Yin ◽  
Wu Xiao-Shan ◽  
Jia Quan-Jie
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Mbe

scholarly journals High-resolution X-ray diffraction analysis of strain relaxation in epitaxial oxide thin films

2008 ◽  
Vol 64 (a1) ◽  
pp. C106-C106
Author(s):  
R. Guinebretiere ◽  
F. Conchon ◽  
A. Boulle ◽  
C. Girardot ◽  
S. Pignard ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Diffraction Analysis ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Epitaxial Oxide

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

2017 ◽  
Vol 122 (12) ◽  
pp. 125702 ◽  
Author(s):  
Chi Xu ◽  
Charutha L. Senaratne ◽  
Robert J. Culbertson ◽  
John Kouvetakis ◽  
José Menéndez
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Vegard’S Law

Cadmium indium selenide semiconducting nanofibers by single step electrochemical route

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540024 ◽  
Author(s):  
B. G. Wagh ◽  
Anuradha B. Bhalerao ◽  
R. N. Bulakhe ◽  
C. D. Lokhande
Keyword(s):  
Thin Films ◽  
Selenium Dioxide ◽  
Indium Selenide ◽  
Single Step ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Ternary Semiconductor ◽  
Cadmium Indium

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

THE EFFECT OF FILM THICKNESS ON THE MICROSTRUCTURE OF La0.5Ca0.5MnO3 FILMS

2002 ◽  
Vol 16 (23) ◽  
pp. 3439-3447 ◽  
Author(s):  
X. M. CHEN ◽  
Y. WANG ◽  
C. X. LIU ◽  
Y. N. ZHAO ◽  
Z. H. MAI ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
High Resolution ◽  
Critical Thickness ◽  
Interface Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Atomic Force ◽  
Different Thickness

La 0.5 Ca 0.5 MnO 3 (LCMO) thin films grown on SrTiO 3 substrate with different thickness were investigated using high resolution X-ray diffraction, small angle reflectivity, and atomic force microscope (AFM). All the films are demonstrated to be c-axis oriented. The surface and interface structure of the films were obtained. It was found that the surface morphology of the films strongly depends on the thickness, and the film will crack when the thickness of the film reach a critical thickness. The surface roughness of the films increases with the thickness. The interface between the films and the substrates are very clear. There exists a non-designed cap layer on the surface of the LCMO layer.

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