Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

2017 ◽  
Vol 122 (12) ◽  
pp. 125702 ◽  
Author(s):  
Chi Xu ◽  
Charutha L. Senaratne ◽  
Robert J. Culbertson ◽  
John Kouvetakis ◽  
José Menéndez
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Vegard’S Law

Preparation and CO2 Gas Sensitive Properties of CuO-SrTiO3-Based Semiconductor Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 311-314 ◽  
Author(s):  
Yan Fei Gu ◽  
Hui Ming Ji ◽  
Bin Zhang ◽  
Ting Xian Xu
Keyword(s):  
Thin Films ◽  
Chelating Agents ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Good Resistance ◽  
Gas Sensitivity ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Ft Ir

CuO-SrTiO3-based thin films were prepared by novel sol-gel technology on Al2O3 substrates using Cu(NO3)2, SrCl2 and TiCl4 as the starting materials, critic acid and ethylene glycol as chelating agents. CO2 sensing properties of the films were investigated. Structure characteristics of the sol and asgrown thin films were analyzed by FT-IR spectrum, X-ray diffraction and SEM. The results reveal that the films consisted of CuO phase and SrTiO3 phase have nanocrystalline microstructure at 750°C for 40 min. The modified CuO-SrTiO3 thin films exhibit good resistance-temperature and gas sensitivity properties in a wide range of temperature. The films exposed to 6% CO2 show that sensitivity are 32, and response and recover time are within 2 s at 250 °C operating temperature.

Cadmium indium selenide semiconducting nanofibers by single step electrochemical route

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540024 ◽  
Author(s):  
B. G. Wagh ◽  
Anuradha B. Bhalerao ◽  
R. N. Bulakhe ◽  
C. D. Lokhande
Keyword(s):  
Thin Films ◽  
Selenium Dioxide ◽  
Indium Selenide ◽  
Single Step ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Ternary Semiconductor ◽  
Cadmium Indium

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

scholarly journals Preparation and Characterization of CoevaporatedCd1−xZnxSAlloy Thin Films

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Wei Li ◽  
Jiayi Yang ◽  
Zhen Sun ◽  
Lianghuan Feng ◽  
Jingquan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Fluorescence Spectra ◽  
Zinc Content ◽  
Blue Shift ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Novel Structure ◽  
Vegard’S Law

Cd1-xZnxSthin films have been prepared by the vacuum coevaporation method. The structural, compositional, and optical properties ofCd1-xZnxSthin films have been investigated using X-ray diffraction, X-ray fluorescence, and optical transmittance spectra. As-depositedCd1-xZnxSthin films are polycrystalline and show the cubic structure forx=1and hexagonal one forx<1with the highly preferential orientation. The composition ofCd1-xZnxSthin films determined from Vegard's law and quartz thickness monitors agrees with that determined from the X-ray fluorescence spectra. Optical absorption edge of optical transmittance forCd1-xZnxSthin films shows a blue shift with the increase of the zinc content. The band gap forCd1-xZnxSthin films can be tuned nonlinearly withxfrom about 2.38 eV for CdS to 3.74 eV for ZnS. A novel structure for CuInS2-based solar cells with aCd0.4Zn0.6Slayer is proposed in this paper.

X-ray diffraction and Rutherford backscattering spectrometry of Ba1NbxTi1−xO3 thin films synthesized by laser ablation

1999 ◽  
Vol 86 (4) ◽  
pp. 2307-2310 ◽  
Author(s):  
M. Nasir Khan ◽  
Hyun-Tak Kim ◽  
T. Kusawake ◽  
H. Kudo ◽  
K. Ohshima ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
X Ray

Lattice Parameter Determination of Textured Co81−xCr15PtxTa4 Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
B. Lu ◽  
S. D. Harkness ◽  
W. A. Lewis ◽  
D. E. Laughlin ◽  
D. N. Lambeth
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Lattice Parameter ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Variation Rate ◽  
Sputter Deposited

ABSTRACTThe thin films Co81−xCr15PtxTa4 with (0002) crystallographic texture have been sputter deposited with and without substrate bias. The lattice parameter of the thin films has been determined by a combination of x-ray diffraction and electron diffraction techniques. The resolution of the electron diffraction was enhanced by a digital imaging technique. The variation rate of the a lattice parameter with Pt content is consistent with Vegard's law. The change in the c lattice parameter is much greater than what is expected from Vegard's law.

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