Piezoelectric Pressure Sensor Based on Enhanced Thin-Film PZT Diaphragm Containing Nanocrystalline Powders

10.5772/54755 ◽  
2013 ◽  
Author(s):  
Vahid Mohammadi ◽  
Saeideh Mohammadi ◽  
Fereshteh Barghi
Keyword(s):  
Thin Film ◽  
Pressure Sensor ◽  
Nanocrystalline Powders ◽  
Piezoelectric Pressure Sensor

scholarly journals A Theoretical Study on an Elastic Polymer Thin Film-Based Capacitive Wind-Pressure Sensor

Polymers ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 2133
Author(s):  
Xue Li ◽  
Jun-Yi Sun ◽  
Bin-Bin Shi ◽  
Zhi-Hang Zhao ◽  
Xiao-Ting He
Keyword(s):  
Thin Film ◽  
Closed Form ◽  
Pressure Sensor ◽  
Closed Form Solution ◽  
Form Solution ◽  
Wind Pressure ◽  
Polymer Thin Film ◽  
Movable Electrode ◽  
Elastic Polymer ◽  
Electrode Plate

This study is devoted to the design of an elastic polymer thin film-based capacitive wind-pressure sensor to meet the anticipated use for real-time monitoring of structural wind pressure in civil engineering. This sensor is composed of four basic units: lateral elastic deflection unit of a wind-driven circular polymer thin film, parallel plate capacitor with a movable circular electrode plate, spring-driven return unit of the movable electrode plate, and dielectric materials between electrode plates. The capacitance of the capacitor varies with the parallel move of the movable electrode plate which is first driven by the lateral elastic deflection of the wind-driven film and then is, after the wind pressure is reduced or eliminated, returned quickly by the drive springs. The closed-form solution for the contact problem between the wind-driven thin film and the spring-driven movable electrode plate is presented, and its reliability is proved by the experiment conducted. The numerical examples conducted show that it is workable that by using the numerical calibration based on the presented closed-form solution the proposed sensor is designed into a nonlinear sensor with larger pressure-monitoring range and faster response speed than the linear sensor usually based on experimental calibration.

scholarly journals Using pressure square-like wave to measure the dynamic characteristics of piezoelectric pressure sensor

2005 ◽  
Vol 13 ◽  
pp. 111-114
Author(s):  
Lee-Long Han ◽  
Tsing-Tshih Tsung ◽  
Liang-Chia Chen ◽  
Ho Chang ◽  
Ching-Song Jwo
Keyword(s):  
Dynamic Characteristics ◽  
Pressure Sensor ◽  
Piezoelectric Pressure Sensor

A Low-Range Drift-Free Bio-compatible Pressure Sensor Based on P(VDF-TrFE) Piezoelectric Thin Film

2009 ◽  
Vol 1222 ◽  
Author(s):  
Xiaoyang Li ◽  
Timothy Reissman ◽  
Fan Yu ◽  
Edwin C. Kan
Keyword(s):  
Thin Film ◽  
Blood Pressure ◽  
Pressure Sensor ◽  
Equivalent Circuit Model ◽  
Swelling Pressure ◽  
Pressure Monitoring ◽  
Sensing Element ◽  
Piezoelectric Resonance ◽  
Piezoelectric Thin Film

AbstractA low-range pressure sensor (0-100kPa) based on the P(VDF-TrFE) piezoelectric thin film is proposed, where the long-term drift is eliminated by operating near the piezoelectric resonance. The pressure sensor is designed for blood pressure and tissue swelling pressure monitoring. The poled 50μm±1μm P(VDF-TrFE) copolymer film is used as the sensing element, with all fabrication and assembly materials biocompatible. A modified Butterworth-Van Dyke (BVD) [1] equivalent circuit model is used to characterize the sensor behavior. The pressure sensor exhibits negligible drift in weeks of operation. The device shows a sensitivity of 0.038MHz/kPa resonance frequency shift under stress, which leads to a maximum readout change of 1.1%/kPa in the present setup.

Design of Ultra Low Temperature Pressure and Temperature Sensor Structure

2011 ◽  
Vol 80-81 ◽  
pp. 693-697
Author(s):  
Chang Hong Ji ◽  
Bin Zhen Zhang ◽  
Jian Zhang ◽  
Xiang Hong Li ◽  
Jian Lin Liu
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Elastic Membrane ◽  
Temperature Influence ◽  
Sensor Sensitivity ◽  
Piezoresistive Pressure Sensor ◽  
Sensor Structure

In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.

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