scholarly journals Effect of Dielectric in a Plasma Annealing System at Atmospheric Pressure

10.5772/50594 ◽  
2012 ◽  
Author(s):  
N.D. Tran ◽  
N. Harada ◽  
T. Sasaki ◽  
T. Kikuchi
Keyword(s):  
Atmospheric Pressure ◽  
Plasma Annealing

Rapid crystallization of amorphous silicon utilizing a VHF plasma annealing at atmospheric pressure

2007 ◽  
Vol 37 (3) ◽  
pp. 315-322 ◽  
Author(s):  
H. Shirai ◽  
Y. Sakurai ◽  
M. Yeo ◽  
T. Kobayashi ◽  
T. Ishikawa
Keyword(s):  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Rapid Crystallization ◽  
Plasma Annealing

Rapid Crystallization of Amorphous Silicon Utilizing the Plasma Annealing at Atmospheric Pressure

2007 ◽  
Vol 989 ◽  
Author(s):  
Hajime Shirai ◽  
Yusuke Sakurai ◽  
Mina Ye ◽  
Koji Haruta ◽  
Tomohiro Kobayashi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Defect Density ◽  
Plasma Jet ◽  
Front Surface ◽  
Translational Velocity ◽  
Rapid Crystallization ◽  
Nitrogen Impurity ◽  
Si Films ◽  
Plasma Annealing

AbstractThe rapid crystallization of amorphous silicon utilizing the rf inductive coupling thermal plasma jet of argon is demonstrated. Highly crystallized a-Si films were fabricated on th-SiO2 and textured a-Si:H:B/SnO2/glass by adjusting the translational velocity of the substrate stage. The H concentration in the films decreased from 1021 cm-3 to 1019 cm-3 with no marked increases in oxygen and nitrogen impurity concentrations and defect density. The crystallization proceeds from the bottom to front surface in terms of the volume expansion during the solidification and crystallization of liquid Si.

Temperature Analysis of Copper Wire in a Plasma Annealing System at Atmospheric Pressure

2011 ◽  
Vol 50 (3R) ◽  
pp. 036202 ◽  
Author(s):  
Dam N. Tran ◽  
Vinh P. Nguyen ◽  
Toru Sasaki ◽  
Takashi Kikuchi ◽  
Nobuhiro Harada
Keyword(s):  
Atmospheric Pressure ◽  
Copper Wire ◽  
Temperature Analysis ◽  
Plasma Annealing

Temperature Analysis of Copper Wire in a Plasma Annealing System at Atmospheric Pressure

2011 ◽  
Vol 50 ◽  
pp. 036202 ◽  
Author(s):  
Dam N. Tran ◽  
Vinh P. Nguyen ◽  
Toru Sasaki ◽  
Takashi Kikuchi ◽  
Nobuhiro Harada
Keyword(s):  
Atmospheric Pressure ◽  
Copper Wire ◽  
Temperature Analysis ◽  
Plasma Annealing

scholarly journals The Effects of Thermal and Atmospheric Pressure Radio Frequency Plasma Annealing in the Crystallization of TiO2 Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 357 ◽  
Author(s):  
Yu Xu ◽  
Yu Zhang ◽  
Tao He ◽  
Ke Ding ◽  
Xiaojiang Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Treatment ◽  
Radio Frequency ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Emission Spectra ◽  
Tio2 Thin Films ◽  
Pressure Plasma ◽  
Amorphous Tio2 ◽  
Plasma Annealing

Amorphous TiO2 thin films were respectively annealed by 13.56 MHz radio frequency (RF) atmospheric pressure plasma at discharge powers of 40, 60, 80 W and thermal treatment at its corresponding substrate temperature (Ts). Ts was estimated through three measurement methods (thermocouple, Newton’s law of cooling and OH optical emission spectra simulation) and showed identically close results of 196, 264 and 322 °C, respectively. Comparing with thermal annealing, this RF atmospheric pressure plasma annealing process has obvious effects in improving crystallization of the amorphous films, based on the XRD and Raman analysis of the film. Amorphous TiO2 film can be changed to anatase film at about 264 °C of Ts for 30 min plasma treatment, while it almost remains amorphous after 322 °C thermal treatment for the same time.

A High-Voltage Terminal for a Field-Emission Gun

1972 ◽  
Vol 30 ◽  
pp. 428-429
Author(s):  
N. F. Ziegler
Keyword(s):  
Field Emission ◽  
High Voltage ◽  
Atmospheric Pressure ◽  
Power Supplies ◽  
High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

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