scholarly journals Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films

10.5772/48290 ◽  
2012 ◽  
Author(s):  
Denys Kurbatov ◽  
Anatoliy Opanasyuk ◽  
Halyna Khlyap
Keyword(s):  
Optical Spectroscopy ◽  
Localized States ◽  
Semiconductor Films

scholarly journals Фотофизические свойства тонких пленок перилена, модифицированного функциональными группами диангидрида и диимида тетракарбоновой кислоты

2021 ◽  
Vol 63 (9) ◽  
pp. 1437
Author(s):  
А.С. Комолов ◽  
Э.Ф. Лазнева ◽  
Е.В. Жижин ◽  
Э.К. Алиджанов ◽  
Ю.Д. Лантух ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Band Gap ◽  
Charge Carrier Mobility ◽  
Dark Conductivity ◽  
Localized States ◽  
Semiconductor Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Carrier Traps

The morphology of organic semiconductor films of perylenetetracarboxylic acid dianhydride (PTCDA) and perylenetetracarboxylic acid dibenzyl-diimide (N, N`-DBPTCDI) formed by thermal vacuum deposition was studied by atomic force microscopy. It was shown that annealing of films at 420 K leads to rearrangement of their structure and crystallization. The optical absorption spectra of the films under study were used to estimate the optical band gap. The temperature dependence of the dark conductivity of PTCDA and N, N-DBPTCDI films before and after annealing (Т = 420 K) was established. The values of the activation energy of charge carrier traps are determined. The computer simulation of the density of localized states in the band gap of the films studied was carried out using the photoconductivity spectra in the constant photocurrent mode. Model photovoltaic cells based on PTCDA / СuPc and N, N-DBPTCDI / СuPc structures were formed. The kinetics of decay of the interfacial photo-voltage of the cells prepared was measured using pulsed light as an excitation source. On the basis of the performed measurements, the charge carrier mobility values in the investigated semiconductor materials were estimated.

scholarly journals Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

2010 ◽  
Vol 12 (3,4) ◽  
pp. 279
Author(s):  
O. Prikhodko ◽  
N. Almasov ◽  
N. Korobova ◽  
S. Duysembaev ◽  
K. Turmanova ◽  
...  
Keyword(s):  
High Frequency ◽  
Thermal Evaporation ◽  
Charge Carriers ◽  
Localized States ◽  
Semiconductor Films ◽  
Plasma Sputtering ◽  
Deep Traps ◽  
Ion Plasma ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

<p>The absence of deep traps for electrons in the spectrum of As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.</p>

Optical spectroscopy of localized states in metallic oxides

1992 ◽  
Vol T42 ◽  
pp. 76-82 ◽  
Author(s):  
Robert I Shekhter ◽  
Zeljko Crljen ◽  
Göran Wendin
Keyword(s):  
Optical Spectroscopy ◽  
Localized States ◽  
Metallic Oxides

Structural Phase Contrast in Polycrystalline Organic Semiconductor Films Observed by Broadband Near-Field Optical Spectroscopy

Nano Letters ◽  
2007 ◽  
Vol 7 (4) ◽  
pp. 998-1002 ◽  
Author(s):  
Robert Pomraenke ◽  
Claus Ropers ◽  
Julien Renard ◽  
Christoph Lienau ◽  
Larry Lüer ◽  
...  
Keyword(s):  
Optical Spectroscopy ◽  
Organic Semiconductor ◽  
Phase Contrast ◽  
Near Field ◽  
Structural Phase ◽  
Semiconductor Films

Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPM

1989 ◽  
Vol 28 (Part 1, No. 4) ◽  
pp. 586-592 ◽  
Author(s):  
Tatsuo Shimizu ◽  
Hideo Kidoh ◽  
Akiharu Morimoto ◽  
Minoru Kumeda
Keyword(s):  
Amorphous Semiconductor ◽  
Localized States ◽  
Semiconductor Films

LOCALIZED STATES AND BAND STRUCTURE

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-21-C3-25 ◽  
Author(s):  
F. BASSANI
Keyword(s):  
Band Structure ◽  
Localized States

COMPARISON OF OPTICALLY INDUCED LOCALIZED STATES IN CHALCOGENIDE GLASSES AND THEIR CRYSTALLINE COUNTERPARTS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-383-C4-386 ◽  
Author(s):  
S. G. Bishop ◽  
B. V. Shanabrook ◽  
U. Strom ◽  
P. C. Taylor
Keyword(s):  
Chalcogenide Glasses ◽  
Localized States ◽  
Optically Induced

Homogenization of Organic Semiconductor Films Formed by Vertical Electro-spray Deposition

2020 ◽  
Vol 140 (4) ◽  
pp. 179-185
Author(s):  
Hiroshi Yamauchi ◽  
Yugo Okada ◽  
Takashi Tadokoro ◽  
Kazuhiro Kudo
Keyword(s):  
Organic Semiconductor ◽  
Spray Deposition ◽  
Semiconductor Films

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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