scholarly journals Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

2010 ◽  
Vol 12 (3,4) ◽  
pp. 279
Author(s):  
O. Prikhodko ◽  
N. Almasov ◽  
N. Korobova ◽  
S. Duysembaev ◽  
K. Turmanova ◽  
...  
Keyword(s):  
High Frequency ◽  
Thermal Evaporation ◽  
Charge Carriers ◽  
Localized States ◽  
Semiconductor Films ◽  
Plasma Sputtering ◽  
Deep Traps ◽  
Ion Plasma ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

<p>The absence of deep traps for electrons in the spectrum of As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.</p>

scholarly journals Photoelectric Properties in Amorphous Chalcogenide Glassy Semiconductor As40Se30S30 Films

2010 ◽  
Vol 12 (3,4) ◽  
pp. 285
Author(s):  
O. Prikhodko ◽  
N. Almasov ◽  
N. Korobova ◽  
S. Duysembaev ◽  
K. Turmanova ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Rf Sputtering ◽  
Charge Carriers ◽  
Ion Sputtering ◽  
Amorphous Chalcogenide ◽  
Photoelectric Properties ◽  
Deep Traps ◽  
Ion Plasma ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

<p>Bipolar photoconductivity and bipolar drift of charge carriers have been established in amorphous chalcogenide glassy semiconductors As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> films, obtained by ion-plasma rf sputtering, in contrast to the films of these materials obtained by thermal evaporation. Observed results were due to the lack of deep traps for electrons in the spectrum of localized film states obtained by ion sputtering.</p>

The effect of ion energy on the surface morphology of platinum film under high-frequency ion plasma sputtering

2013 ◽  
Vol 39 (1) ◽  
pp. 130-133 ◽  
Author(s):  
I. I. Amirov ◽  
V. V. Naumov ◽  
M. O. Izyumov ◽  
R. S. Selyukov
Keyword(s):  
Surface Morphology ◽  
High Frequency ◽  
Ion Energy ◽  
Plasma Sputtering ◽  
Ion Plasma

ESR Spectra of Charge Carriers in the α'- and β- Phases of (BEDT-TTF)2IBr2 Single Crystals

2012 ◽  
Vol 190 ◽  
pp. 615-618 ◽  
Author(s):  
A. Chernenkaya ◽  
A.I. Dmitriev ◽  
M. Kirman ◽  
O.V. Koplak ◽  
R.B. Morgunov
Keyword(s):  
Magnetic Moment ◽  
High Frequency ◽  
Esr Spectroscopy ◽  
Esr Spectra ◽  
Organic Conductors ◽  
Charge Carriers ◽  
Localized States ◽  
Two Dimensional ◽  
Orbital Magnetic Moment ◽  
Spin Resonance

High-frequency dynamic magnetic properties of quasi-two-dimensional organic conductors (BEDT-TTF)2IBr2ofα'- andβ-phases have been studied by Electron Spin Resonance (ESR) spectroscopy. The heating of crystals in theα'-phase is accompanied by their phase transition to theβ-phase, so, the Dyson distortion of the ESR line is appeared. Contributions from the crystal field and symmetry of the system as well as the orbital magnetic moment admixture to the total magnetic moment of charge carriers have been judged by the comparison of the orientation and temperature dependencies of the ESR spectra for theα'- andβ-phases. Experimental data have proved localized states of charge carriers either inα'- orβ-phases.

scholarly journals WIDTH OF ENERGY BAND GAP OF NANOPOROUS SEMICONDUCTOR FILMS

2020 ◽  
Vol 17 (2) ◽  
pp. 39-44
Author(s):  
Z.Zh. Zhanabaev ◽  
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Electrochemical Etching ◽  
Semiconductor Films ◽  
Energy Band Gap ◽  
Laser Illumination ◽  
Current Voltage ◽  
Glassy Semiconductor ◽  
Current Voltage Characteristics ◽  
Chalcogenide Glassy Semiconductor

The aim of this work is to experimentally clarify the reasons for the appearance of jumps in the current and memory of semiconductor nanoporous structures.Porous nanostructures were obtained by electrochemical etching. The current-voltage characteristics of the samples were measured for porous silicon and on thin films of a chalcogenide glassy semiconductor. The existence of jump-like switching and current hysteresis in porous silicon nanofilms under laser illumination is shown experimentally.A connection between the switching voltage values and the dependence of the band gap on the porosity of nanofilms is found. These results make it possible to construct a theory of current switching and its hysteresis based on the concepts of the theory of second-order phase transitions.

scholarly journals Structure and Vibrational Spectra of thin Films β-Ga2O3

2016 ◽  
Vol 17 (4) ◽  
pp. 515-519
Author(s):  
O.M. Bordun ◽  
M.V. Partyka ◽  
I.I. Medvid ◽  
I.Yo. Kukharskyy ◽  
V.V. Ptashnyk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
High Frequency ◽  
Quartz Substrate ◽  
Plasma Sputtering ◽  
Ir Reflection ◽  
Ion Plasma ◽  
Fused Quartz ◽  
Structure Phase

The structure, phase composition and surface morphology of thin films b-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fused quartz substrate υ-SiO2 in region 400–1600 cm-1 at 295 K were measured. The peaks in the spectrum of films b-Ga2O3, associated with vibration of Ga – O fragments in structural tetrahedral GaO4 and octahedral GaO6 complexes was interpreted.

INFLUENCE OF THE COMPOSITION OF THE RADIO-FREQUENCY SPUTTERING ATMOSPHERE ON THE DENSITY OF STATES AND INTERBAND LIGHT ABSORPTION IN THIN Y2O3 FILMS

2021 ◽  
Vol 88 (6) ◽  
pp. 881-886
Author(s):  
O. M. Bordun ◽  
I. O. Bordun ◽  
I. M. Kofliuk ◽  
I. Yo. Kukharskyy ◽  
I. I. Medvid
Keyword(s):  
Absorption Band ◽  
Density Of States ◽  
Interband Absorption ◽  
Long Wavelength ◽  
Plasma Sputtering ◽  
Radio Frequency Sputtering ◽  
Ion Plasma ◽  
Quasi Classical Approximation ◽  
Heavily Doped ◽  
Interband Light Absorption

The long-wavelength edge of the fundamental absorption band of thin Y2O3 films obtained by radiofrequency ion-plasma sputtering is investigated. The edge of interband absorption after annealing of the films in an atmosphere of argon, oxygen, or a mixture of these gases is shown to be approximated well by the Urbach empirical rule. Diffractograms of the obtained films were studied and a model of a heavily doped or defective semiconductor in the quasi-classical approximation was used to analyze the experimental results. This model allows determining the radius of the basic electronic state, the screening radius, and the rootmean-square potential depending on the sputtering atmosphere.

LOW-TEMPERATURE ION-PLASMA DEPOSITION TECHNOLOGY OF NANOSTRUCTURED FILMS OF ALUMINUM AND BORON NITRIDES

2021 ◽  
Vol 56 ◽  
pp. 97-107
Author(s):  
M. S. Zayats ◽  
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
High Frequency ◽  
Plasma Deposition ◽  
Heating Temperature ◽  
Substrate Heating ◽  
Ion Plasma ◽  
Technological Cycle ◽  
Physical And Chemical

A low-temperature (substrate heating temperature up to 400 °C) ion-plasma technology for the formation of nanostructured AlN and BN films by the method of high-frequency reactive magnetron sputtering of the corresponding targets has been developed (the modernized installation "Cathode-1M"), which has in its technological cycle the means of physical and chemical modification, which allow to purposefully control the phase composition, surface morphology, size and texture of nanocrystalline films. The possibility of using the method of high-frequency magnetron sputtering for deposition of transparent hexagonal BN films in the nanoscale state on quartz and silicon substrates is shown. Atomic force microscopy (AFM) has shown that AlN films can have an amorphous or polycrystalline surface with grain sizes of approximately 20-100 nm, with the height of the nanoparticles varying from 3 to 10 nm and the degree of surface roughness from 1 to 10 nm. It was found that the dielectric penetration of polycrystalline AlN films decreases from 10 to 3.5 at increased frequencies from 25 Hz to 1 MHz, and the peak tangent of the dielectric loss angle reaches 0.2 at 10 kHz. Such features indicate the existence of spontaneous polarization of dipoles in the obtained AlN films. Interest in dielectric properties in AlN / Si structures it is also due to the fact that there are point defects, such as nitrogen vacancies and silicon atoms, which diffuse from the silicon substrate during synthesis and play an important role in the dielectric properties of AlN during the formation of dipoles. The technology makes it possible, in a single technological cycle, to produce multilayer structures modified for specific functional tasks with specified characteristics necessary for the manufacture of modern electronics, optoelectronics and sensorics devices. It should also be noted that the technology of magnetron sputtering (installation "Cathode-1M") is highly productive, energetically efficient and environmentally friendly in comparison with other known technologies for creating semiconductor structures and allows them to be obtained with minimal changes in the technological cycle.

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