Optical Spectroscopy on Single Localized States in an InGaN/GaN Structure

Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films

Advanced Aspects of Spectroscopy ◽

10.5772/48290 ◽

2012 ◽

Cited By ~ 1

Author(s):

Denys Kurbatov ◽

Anatoliy Opanasyuk ◽

Halyna Khlyap

Keyword(s):

Optical Spectroscopy ◽

Localized States ◽

Semiconductor Films

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Optical spectroscopy of localized states in metallic oxides

Physica Scripta ◽

10.1088/0031-8949/1992/t42/015 ◽

1992 ◽

Vol T42 ◽

pp. 76-82 ◽

Cited By ~ 1

Author(s):

Robert I Shekhter ◽

Zeljko Crljen ◽

Göran Wendin

Keyword(s):

Optical Spectroscopy ◽

Localized States ◽

Metallic Oxides

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LOCALIZED STATES AND BAND STRUCTURE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1972304 ◽

1972 ◽

Vol 33 (C3) ◽

pp. C3-21-C3-25 ◽

Cited By ~ 3

Author(s):

F. BASSANI

Keyword(s):

Band Structure ◽

Localized States

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COMPARISON OF OPTICALLY INDUCED LOCALIZED STATES IN CHALCOGENIDE GLASSES AND THEIR CRYSTALLINE COUNTERPARTS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981482 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-383-C4-386 ◽

Cited By ~ 4

Author(s):

S. G. Bishop ◽

B. V. Shanabrook ◽

U. Strom ◽

P. C. Taylor

Keyword(s):

Chalcogenide Glasses ◽

Localized States ◽

Optically Induced

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Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

MRS Proceedings ◽

10.1557/proc-764-c5.5 ◽

2003 ◽

Vol 764 ◽

Author(s):

X. A. Cao ◽

S. F. LeBoeuf ◽

J. L. Garrett ◽

A. Ebong ◽

L. B. Rowland ◽

...

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Light Output ◽

Localized States ◽

Multiple Quantum ◽

Nonradiative Recombination ◽

Light Emitting ◽

Temperature Range ◽

Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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