Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors

Current Topics in Ionizing Radiation Research ◽

10.5772/39263 ◽

2012 ◽

Cited By ~ 4

Author(s):

Momilo Pejovi ◽

Predrag Osmokrovi ◽

Milica Pejovi ◽

Koviljka Stankovi

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/41/2/023001 ◽

2008 ◽

Vol 41 (2) ◽

pp. 023001 ◽

Cited By ~ 17

Author(s):

Goran S Ristic

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC09 ◽

Cited By ~ 4

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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Total dose dependence of hot carrier injection effect in the n-channel metal oxide semiconductor devices

Acta Physica Sinica ◽

10.7498/aps.65.246101 ◽

2016 ◽

Vol 65 (24) ◽

pp. 246101

Author(s):

He Yu-Juan ◽

Zhang Xiao-Wen ◽

Liu Yuan

Keyword(s):

Metal Oxide ◽

Total Dose ◽

Semiconductor Devices ◽

Dose Dependence ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection ◽

Injection Effect

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Mismatches after Hot-Carrier Injection in Advanced Complementary Metal–Oxide–Semiconductor Technology Particularly for Analog Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3266 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3266-3271 ◽

Cited By ~ 3

Author(s):

Shuang-Yuan Chen ◽

Jung-Chun Lin ◽

Hung-Wen Chen ◽

Hung-Chuan Lin ◽

Ze-Wei Jhou ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Injection ◽

Semiconductor Technology ◽

Hot Carrier ◽

Hot Carrier Injection

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Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.074001 ◽

2012 ◽

Vol 51 (7R) ◽

pp. 074001

Author(s):

Ming Hu ◽

Toshiaki Tsuchiya

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Interface Trap ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with One-Side Halo Implantation to Enable Low-Voltage Operation Using Hot-Carrier Injection

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6441 ◽

2005 ◽

Vol 44 (9A) ◽

pp. 6441-6445

Author(s):

Hideto Tomiye ◽

Kazumasa Nomoto ◽

Kazuhide Koyama ◽

Toshio Kobayashi

Keyword(s):

Metal Oxide ◽

Low Voltage ◽

Memory Device ◽

Oxide Semiconductor ◽

Carrier Injection ◽

Semiconductor Memory ◽

Hot Carrier ◽

Low Voltage Operation ◽

Hot Carrier Injection ◽

Nitride Oxide

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Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.074001 ◽

2012 ◽

Vol 51 ◽

pp. 074001

Author(s):

Ming Hu ◽

Toshiaki Tsuchiya

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Interface Trap ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In 0.53 Ga 0.47 As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Chinese Physics Letters ◽

10.1088/0256-307x/32/11/117302 ◽

2015 ◽

Vol 32 (11) ◽

pp. 117302 ◽

Cited By ~ 1

Author(s):

Xiao-Yu Tang ◽

Ji-Wu Lu ◽

Rui Zhang ◽

Wang-Ran Wu ◽

Chang Liu ◽

...

Keyword(s):

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Body ◽

Carrier Injection ◽

Back Gate ◽

Hot Carrier ◽

Bias Temperature Instability ◽

Hot Carrier Injection ◽

Effect Transistor

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Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.4891847 ◽

2014 ◽

Vol 105 (4) ◽

pp. 043506 ◽

Cited By ~ 2

Author(s):

G. Gruber ◽

P. Hadley ◽

M. Koch ◽

T. Aichinger

Keyword(s):

Magnetic Resonance ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnetic Resonance Study ◽

Hot Carrier ◽

Electrically Detected Magnetic Resonance ◽

Effect Transistor

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