scholarly journals Nitridation of GaAs Surface by Low Energy Ion Implantation with In Situ Control of Chemical Composition

10.5772/34863 ◽  
2012 ◽  
Author(s):  
Valery Mikoushkin
Keyword(s):  
Chemical Composition ◽  
Ion Implantation ◽  
Low Energy ◽  
Gaas Surface ◽  
In Situ Control

A New Method for Measuring Ion Implantation Amorphous Dose In Situ

1991 ◽  
Vol 235 ◽  
Author(s):  
Jianzhong Yuan ◽  
Igor V. Verner ◽  
James W. Corbett
Keyword(s):  
Ion Implantation ◽  
Plane Stress ◽  
Implantation Dose ◽  
Low Energy ◽  
New Method ◽  
Stress Measurements ◽  
P Type ◽  
Low Energy Ions ◽  
Good Agreement

ABSTRACTAn in situ method for determining the ion implantation dose necessary to make Si amorphous is developed and utilized. This method is based on measuring ion-implantation-induced in-plane stress. Measurements are carried out for various low energy ions implanted into thin p-type (100) Si. The doses necessary to make Si amorphous obtained by this method are in good agreement with previous data. This technique is sensitive, informative, quick, visual and nondestructive.

scholarly journals Tirmania pinoyi: Chemical composition, in vitro antioxidant and antibacterial activities and in situ control of Staphylococcus aureus in chicken soup

2013 ◽  
Vol 53 (1) ◽  
pp. 56-62 ◽  
Author(s):  
Dejan Stojković ◽  
Filipa S. Reis ◽  
Isabel C.F.R. Ferreira ◽  
Lillian Barros ◽  
Jasmina Glamočlija ◽  
...  
Keyword(s):  
Staphylococcus Aureus ◽  
Chemical Composition ◽  
Antibacterial Activities ◽  
In Situ Control

Structural Studies on Mitotic Spindle Fibres

1978 ◽  
Vol 36 (3) ◽  
pp. 615-626
Author(s):  
J.R. Mcintosh
Keyword(s):  
Chemical Composition ◽  
Mitotic Spindle ◽  
Structural Studies ◽  
Mitotic Apparatus ◽  
Chemical Studies ◽  
Medical Interest ◽  
Spindle Fibres

The mitotic apparatus is a structure of obvious biological and medical interest, but it has proved to be a difficult cellular machine to understand. The chemical composition of the spindle is only slightly elucidated, largely because of the difficulties in preparing useful isolates of the structure. Chemical studies of the mitotic spindle have been reviewed elsewhere (Mcintosh, 1977), and will not be discussed further here. One would think that structural studies on the mitotic apparatus (MA) in situ would be straightforward, but even with this approach there is some disagreement in the results obtained with various methods and by different investigators. In this paper I will review briefly the approaches which have been used in structural studies of the MA, pointing out the strengths and problems of each approach. I will summarize the principal findings of the different methods, and identify what seem to be fruitful avenues for further work.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy

scholarly journals Electrochemical bubble generation via hydrazine oxidation for the in situ control of an electrodeposited conducting polymer micro/-nanostructure

RSC Advances ◽  
2021 ◽  
Vol 11 (18) ◽  
pp. 11020-11025
Author(s):  
David Possetto ◽  
Luciana Fernández ◽  
Gabriela Marzari ◽  
Fernando Fungo
Keyword(s):  
Conducting Polymer ◽  
Electrochemical Method ◽  
Bubble Generation ◽  
Hydrazine Oxidation ◽  
In Situ Control

An electrochemical method to manipulate the size and density of electrodeposited polypyrrole structures at the micro-nanoscale by the discharge of hydrazine.

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