In situ control of the desorption process of GaAs surface native oxide by direct Ga beam irradiation

Author(s):  
Y. Asaoka ◽  
T. Kanebishi ◽  
N. Sano ◽  
T. Kaneko
2003 ◽  
Vol 255 (3-4) ◽  
pp. 419
Author(s):  
Yasushi Asaoka ◽  
Takuji Kanebishi ◽  
Naokatsu Sano ◽  
Tadaaki Kaneko

1992 ◽  
Vol 259 ◽  
Author(s):  
Mizuho Morita ◽  
Tadahiro Ohmi

ABSTRACTIn situ control methods of native oxide growth on Si surfaces at room temperature and during the temperature ramp-up are proposed for metal/Si contact formation, lowtemperature Si epitaxy, and very-thin thermal oxide film formation, based on analyses of factors dominating the oxide growth. Low-resistance W/Si contacts are formed by N2 gas sealed processing of HF cleaning right before W chemical vapor deposition(CVD). Highquality epitaxial Si films are grown at a low temperature of 550°C using Si2H6 molecular flow pre-showering to suppress the oxide growth caused by water or oxygen in a CVD reactor. Very thin gate oxide films with high insulating performance are realized by the preoxidation step at 300°C to form one-molecular-layer oxide for passivation and by the subsequent temperature ramp-up step in ultraclean Ar gas to prevent oxide growth and an increase of surface microroughness before the thermal oxidation step.


2017 ◽  
Vol 686 ◽  
pp. 44-48 ◽  
Author(s):  
Wei Wang ◽  
Xianwei Bai ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
Yuan Yao ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (18) ◽  
pp. 11020-11025
Author(s):  
David Possetto ◽  
Luciana Fernández ◽  
Gabriela Marzari ◽  
Fernando Fungo

An electrochemical method to manipulate the size and density of electrodeposited polypyrrole structures at the micro-nanoscale by the discharge of hydrazine.


2021 ◽  
Vol 544 ◽  
pp. 148874
Author(s):  
Yi-Hsin Ting ◽  
Min-Ci Wu ◽  
Yoshitaka Aoyama ◽  
Kuo-Chang Lu ◽  
Wen-Wei Wu

Nano Today ◽  
2021 ◽  
Vol 39 ◽  
pp. 101226
Author(s):  
Surong Zhang ◽  
Chenyang Guo ◽  
Lifa Ni ◽  
Kerstin M. Hans ◽  
Weiqiang Zhang ◽  
...  

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