A New Method for Measuring Ion Implantation Amorphous Dose In Situ

1991 ◽  
Vol 235 ◽  
Author(s):  
Jianzhong Yuan ◽  
Igor V. Verner ◽  
James W. Corbett
Keyword(s):  
Ion Implantation ◽  
Plane Stress ◽  
Implantation Dose ◽  
Low Energy ◽  
New Method ◽  
Stress Measurements ◽  
P Type ◽  
Low Energy Ions ◽  
Good Agreement

ABSTRACTAn in situ method for determining the ion implantation dose necessary to make Si amorphous is developed and utilized. This method is based on measuring ion-implantation-induced in-plane stress. Measurements are carried out for various low energy ions implanted into thin p-type (100) Si. The doses necessary to make Si amorphous obtained by this method are in good agreement with previous data. This technique is sensitive, informative, quick, visual and nondestructive.

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

2000 ◽  
Vol 338-342 ◽  
pp. 933-936 ◽  
Author(s):  
N. Achtziger ◽  
C. Hülsen ◽  
Martin S. Janson ◽  
Margareta K. Linnarsson ◽  
Bengt Gunnar Svensson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
P Type

GaN P-N Structures Fabricated by Mg ION Implantation

1998 ◽  
Vol 537 ◽  
Author(s):  
E.V. Kalinina ◽  
V.A. Solov'ev ◽  
A.S. Zubrilov ◽  
V.A. Dmitriev ◽  
A.P. Kovarsky
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Scattered Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electron Beam Induced Current ◽  
P Type ◽  
Secondary Ion

AbstractIn this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2 × 1016 cm2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

A new method of measuring electron emission induced by low energy ions from solids

2008 ◽  
Vol 19 (5) ◽  
pp. 055704 ◽  
Author(s):  
H Zhang ◽  
A Breskin ◽  
R Chechik ◽  
S Shckemelinin ◽  
O Ternyak ◽  
...  
Keyword(s):  
Electron Emission ◽  
Low Energy ◽  
New Method ◽  
Low Energy Ions

Shallow Junctions for Sub-100 Nm Cmos Technology

2001 ◽  
Vol 669 ◽  
Author(s):  
Veerle Meyssen ◽  
Peter Stolk ◽  
Jeroen van Zijl ◽  
Jurgen van Berkum ◽  
Willem van de Wijgert ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cmos Technology ◽  
Low Energy ◽  
Annealing Conditions ◽  
Delta Doping ◽  
Shallow Junctions ◽  
P Type ◽  
Spike Annealing

ABSTRACTThis paper studies the use of ion implantation and rapid thermal annealing for the fabrication of shallow junctions in sub-100 nm CMOS technology. Spike annealing recipes were optimized on the basis of delta-doping diffusion experiments and shallow junction characteristics. In addition, using GeF2 pre-amorphization implants in combination with low-energy BF2 and spike annealing, p-type junctions depths of 30 nm were obtained with sheet resistances as low as 390 Ω/sq. The combined finetuning of implantation and annealing conditions is expected to enable junction scaling into the 70-nm CMOS technology node.

Simulation of the penetration range distribution for low energy ions injected into plant seeds

2018 ◽  
Vol 47 (3) ◽  
pp. 397-404
Author(s):  
Wang Linxiang
Keyword(s):  
Low Energy ◽  
Modified Model ◽  
Plant Seeds ◽  
Range Distribution ◽  
Atomic Nuclei ◽  
Injection Modes ◽  
Low Energy Ions ◽  
Fortran Programming Language ◽  
Wheat Seeds ◽  
Good Agreement

In the present experiment on low-energy ions implanted into seeds, factors such as the unique microstructure of the seeds, the energy and injection mode of the ions, the step diameter and scattering angle of the ions after collision, and the collision energy loss between ions and atomic nuclei or electrons are considered. A modified model for ions implanted into seeds is established. The range distribution is simulated for vanadium, titanium, and iron ions (V+, Ti+, and Fe+) with different energies and injection modes implanted into peanut, cotton, and wheat seeds, using the FORTRAN programming language and Monte-Carlo method; the results are in good agreement with the experimental data. In addition, the model is used to estimate the range distribution for nitrogen, hydrogen, and argon ions (N+, H+, Ar+) implanted into peanut, cotton and wheat seeds.

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