scholarly journals Synchronous Vapor-Phase Coating of Conducting Polymers for Flexible Optoelectronic Applications

Author(s):  
Keon-Soo Jang ◽  
Jae-Do Nam
2019 ◽  
Vol 11 (43) ◽  
pp. 40503-40511 ◽  
Author(s):  
Ufuk Erkılıç ◽  
Pablo Solís-Fernández ◽  
Hyun Goo Ji ◽  
Keisuke Shinokita ◽  
Yung-Chang Lin ◽  
...  

2001 ◽  
Author(s):  
Sumant Padiyar ◽  
Li Chen ◽  
Harry Efsthadiatis ◽  
Robert E. Geer

Polymer ◽  
2014 ◽  
Vol 55 (16) ◽  
pp. 3458-3460 ◽  
Author(s):  
Robert Brooke ◽  
Manrico Fabretto ◽  
Pejman Hojati-Talemi ◽  
Peter Murphy ◽  
Drew Evans

ACS Nano ◽  
2019 ◽  
Vol 13 (9) ◽  
pp. 10085-10094 ◽  
Author(s):  
Liyun Zhao ◽  
Yan Gao ◽  
Man Su ◽  
Qiuyu Shang ◽  
Zhen Liu ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (27) ◽  
pp. 15976-15982 ◽  
Author(s):  
Itxasne Azpitarte ◽  
Gabriele A. Botta ◽  
Christopher Tollan ◽  
Mato Knez

Simultaneous coating and infiltration of Kevlar fibers with two different inorganic materials significantly improves the modulus of toughness of the polymer and provides protection against UV-induced degradation.


2008 ◽  
Vol 516 (18) ◽  
pp. 6020-6027 ◽  
Author(s):  
Thuy Le Truong ◽  
Dong-Ouk Kim ◽  
Youngkwan Lee ◽  
Tae-Woo Lee ◽  
Jong Jin Park ◽  
...  

Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


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