Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications

ACS Nano ◽  
2019 ◽  
Vol 13 (9) ◽  
pp. 10085-10094 ◽  
Author(s):  
Liyun Zhao ◽  
Yan Gao ◽  
Man Su ◽  
Qiuyu Shang ◽  
Zhen Liu ◽  
...  
Author(s):  
Natalia Porotnikova ◽  
Andrei Farlenkov ◽  
Sergey Naumov ◽  
Maxim Vlasov ◽  
Anna Khodimchuk ◽  
...  

The 16O/18O oxygen exchange kinetics between the gas phase and the oriented single crystal and polycrystalline specimen has been studied; the rates of individual stages of oxygen exchange have been calculated and discussed.


2021 ◽  
Author(s):  
C. S. JULIET BRINTHA ◽  
S.E JOEMA

Abstract Preferable, third-order nonlinear optical (NLO) single crystal, 3-Nitroanilinium chloride (3NACL) was auspiciously synthesised by slow evaporation technique. The crystal system of synthesised 3NACL crystal is triclinic with centrosymmetric space group was identified by single crystal XRD studies. All the functional groups present in the sample and its respective vibrations are analysed through FTIR analysis. UV-Vis transmittance spectrum revealed that the synthesised material was 83% transmittance and it cut-off wavelength was 276nm. The mechanical stability and thermal property of grown 3NACL crystals were ascertained by Vickers micro hardness analysis and TG/DTA analysis. The intermolecular interaction of the 3NACL was scrutinized by Hirshfeld surface analysis. Dielectric studies revealed that dielectric constant and dielectric loss were high at lower frequency region due to the space charge polarization. Inclusion free 3NACL crystal was used to analyse the Laser damage threshold (LDT) studies and its calculated LDT value was 4.3 GW/cm2. The third-order NLO parameters (β = 7.5472x10− 12 m/W, η2 = 5.6931x10− 19 m2/W, χ3 = 2.9491x10− 13 esu) of the 3NACL material was statutory evaluated by Z-scan studied. Here, β and η2 are positive value due to the saturated absorption and self-focusing effect was observed in open and closed aperture z-scan curve. Above all these findings 3NACL was suitable material for NLO and optoelectronic applications.


1999 ◽  
Vol 58 (2) ◽  
pp. 141-146 ◽  
Author(s):  
W Chang ◽  
C.P Kao ◽  
G.A Pike ◽  
J.A Slone ◽  
E Yablonovitch

2021 ◽  
pp. 2112277
Author(s):  
Rajesh Kumar Ulaganathan ◽  
Raghavan Chinnambedu Murugesan ◽  
Chang‐Yu Lin ◽  
Ambika Subramanian ◽  
Wei‐Liang Chen ◽  
...  

2019 ◽  
Vol 7 (31) ◽  
pp. 18373-18379 ◽  
Author(s):  
Yuan Cheng ◽  
Hui Bi ◽  
Xiangli Che ◽  
Wei Zhao ◽  
Dezeng Li ◽  
...  

Single-crystal graphene film growth by the seamless stitching of highly oriented single-crystal graphene domains on a resolidified Cu (111) surface.


Author(s):  
Marie Gorisse ◽  
Alexis Drouin ◽  
Yann Sinquin ◽  
Isabelle Huyet ◽  
Emilie Courjon ◽  
...  

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.


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