scholarly journals Evidence of Carboxyl Modification of Hydrogen-Free Diamond-Like Carbon Films Assisted by Radio Frequency Plasma in Vacuum

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Yuqi Xue ◽  
Zixin Wang ◽  
Jun Wang ◽  
Changji Hu ◽  
Fangyan Xie ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Films ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Spectra Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Ft Ir

Modification of hydrogen-free diamond-like carbon (DLC) is presented, with acrylic acid (AA) vapor carried into a vacuum chamber by argon and with the in situ assistance of low-power radio frequency (RF) plasma at a temperature below 100°C. Measured by atomic force microscopy (AFM) technique, the roughness (Ra) of the DLC was 1.063±0.040 nm. XPS and FT-IR spectra analysis showed that carboxyl groups were immobilized on the surface of the DLC films, with about 40% of carboxyl group area coverage. It was found that the RF plasma and reaction time are important in enhancing the modification rate and efficiency.

DEPOSITION OF WIDE BAND GAP DLC FILMS USING R.F. PECVD AT VERY LOW POWER

2011 ◽  
Vol 25 (29) ◽  
pp. 3941-3949 ◽  
Author(s):  
P. K. BARHAI ◽  
RISHI SHARMA ◽  
B. B. NAYAK
Keyword(s):  
Band Gap ◽  
Chemical Vapor ◽  
Wide Band ◽  
Carbon Films ◽  
Wide Band Gap ◽  
Force Microscopy ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Bending Modes ◽  
Deposited Films

Wide band gap diamond-like carbon films (DLCs) are deposited on silicon (1 0 0) substrates using capacitive coupled radio frequency plasma-enhanced chemical vapor deposition (R.F. PECVD) technique. The deposition of films is carried out at a constant pressure (~5×10-2 mbar ) using acetylene precursor diluted with argon at constant R.F. power of 5 W. Raman spectroscopy of deposited DLC films shows broad G peak near 1550 cm-1 and a weak D peak near 1320 cm1. FTIR plot of DLC films shows a peak near 2900 cm-1 corresponding to C–H stretching mode and peaks below 2000 cm-1 corresponding to C–C modes and C–H bending modes. Maximum hardness of the deposited films is found to be ~15 GPa. Band gap of the DLC films is ~3.5 eV. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) pictures show that the deposited films are amorphous. Deposition mechanism of wide band gap DLC film is explained on the basis of subplantation model.

Improvement of Hydrophilic Stability of Diamond-Like Carbon Films by O2/CF4 Plasma Post-Treatment

2015 ◽  
Vol 1125 ◽  
pp. 38-44
Author(s):  
Chavin Jongwannasiri ◽  
Shuichi Watanabe
Keyword(s):  
Carbon Films ◽  
Post Treatment ◽  
Attenuated Total Reflectance ◽  
Diamond Like Carbon ◽  
Total Reflectance ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Contact Angle Measurements ◽  
Before And After

In this article, the results obtained from a study carried out on the plasma post-treatment of diamond-like carbon (DLC) films using an oxygen/tetrafluoromethane (O2/CF4) gas mixture is reported. The surface morphology and chemical bonding of the films before and after the plasma post-treatment were characterized using atomic force microscopy (AFM) and attenuated total reflectance-Fourier transform infrared (ATR-FTIR) spectroscopy. The effect of adding CF4 to the O2 plasma on the wettability of the films was also examined using contact angle measurements. The results indicate that the surface roughness increased with the addition of CF4 to the O2 plasma, whereas oxygen-and fluorinated-based functional groups were generated on the surface of the DLC films submitted to O2/CF4 plasma post-treatment. The surface energy also decreased with increasing CF4 fraction, causing the surface of the films to be hydrophobic. Furthermore, the films containing 20% CF4 exhibited higher hydrophilic stability than the others. Thus, the addition of a small amount of CF4 to O2 plasma can be considered beneficial in improving the hydrophilic stability of surface of DLC films.

Diamond-like carbon films deposited in a dual microwave-radio-frequency plasma

1992 ◽  
Vol 11 (1-4) ◽  
pp. 321-324 ◽  
Author(s):  
O.M. Küttel ◽  
L. Martinu ◽  
D. Poitras ◽  
J.E. Klemberg-Sapieha ◽  
M.R. Wertheimer
Keyword(s):  
Radio Frequency ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
Microwave Radio

Mechanical Properties and Surface Morphology of Diamond-Like Carbon Films with SiNx Interlayer

2015 ◽  
Vol 723 ◽  
pp. 515-519
Author(s):  
Qing Yun Chen ◽  
Kai Min Shih ◽  
Man Yi Duan ◽  
Lie Lin Wang
Keyword(s):  
Mechanical Properties ◽  
Surface Morphology ◽  
Indentation Test ◽  
Deposition Process ◽  
Industrial Applications ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Dc Magnetron Sputtering ◽  
Force Microscopy ◽  
Atomic Force

Diamond-like carbon (DLC) film has remarkable physical, mechanical, biomedical and tribological properties that make it attractive material for numerous industrial applications needs of advanced mechanical systems. In this study, deposition process of DLC films on Si (100) are performed by direct-current (DC) magnetron sputtering method. The effects of interlayer on the compositions, structures and mechanical properties of DLC films are studied. The scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal the creation of high uniform surface morphology and low roughness DLC films with SiNxinterlayer. For comparison, DLC films with different interlayers are also grown. The Raman spectra are analyzed in order to characterize the film compositions. Indentation test was performed to value the mechanical properties of DLC films. Raman, SEM, and AFM analyses are correlated with the mechanical properties of the DLC films.

Relationship between Precursor Gas Flow Rate with the Structural and Morphology Properties of Diamond like Carbon Films

2014 ◽  
Vol 970 ◽  
pp. 128-131
Author(s):  
Ong Wai Kit ◽  
Karim bin Deraman ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Jackie Chen Keng Yik
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Chemical Vapour ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Gas Flow Rate ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Direct Current Plasma

Diamond like carbon (DLC) thin films were grown onto glass substrates by using direct current plasma enhance chemical vapour deposition (DC-PECVD) system. Films were deposited under fixed deposition pressure (4 x 10-1 Torr), substrate temperature (500°C) and deposition time (3 hours) but with different flow rate of precursor gas (methane, hydrogen and argon). The fabricated films were characterized by using x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD has revealed that the DLC films were having amorphous phase as the XRD spectrum did not show any obvious sharp peak. From AFM, it was discovered that the precursor gas flow rate has inversely relationship with the grain size and surface roughness of films.

Direct Growth of AIN Thin Layer on (111)Si Substrate by RF-MBE

1998 ◽  
Vol 512 ◽  
Author(s):  
Naoki Ohshima ◽  
Hiroo Yonezu ◽  
Shinobu Uesugi ◽  
Keisuke Gotoh ◽  
Seiji Yamahira
Keyword(s):  
High Energy ◽  
Rf Plasma ◽  
Si Substrate ◽  
Plasma Gun ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nitridation Process ◽  
Migration Enhanced Epitaxy ◽  
Direct Growth

ABSTRACTThe nitridation process of (111)Si surface has been studied by in-situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements. It has been clarified that the nitridation of the Si surface is occurred even if the shutter of the discharged rf-plasma gun is closed. The growth process of AIN epilayer on the Si substrate by migration enhanced epitaxy (MEE) has been investigated by in-situ RHEED and atomic force microscopy (AFM) observations. It has been found that the AIN epilayer is directly grown on (111)Si by MEE growth.

Adsorption Density of Spherical Cetyltrimethylammonium Bromide (CTAB) Micelles at a Silica/Silicon Surface

2005 ◽  
Vol 59 (5) ◽  
pp. 668-672 ◽  
Author(s):  
Vamsi K. Paruchuri ◽  
Keqing Fa ◽  
Brij M. Moudgil ◽  
Jan D. Miller
Keyword(s):  
Fourier Transform ◽  
Cetyltrimethylammonium Bromide ◽  
Force Microscopy ◽  
Atomic Force ◽  
Density Values ◽  
Ft Ir ◽  
Adsorption Density ◽  
Internal Reflection Spectroscopy ◽  
Density Equation

In situ Fourier transform infrared internal reflection spectroscopy (FT-IR/IRS) was used to calculate the adsorption density values for spherical cetyltrimethylammonium bromide (CTAB) micelles at the silica/silicon (SiO2/Si) surface based on a previously developed adsorption density equation. Recent advances in atomic force microscopy (AFM) imaging methodology have led to the ability to image surface micelles, which was not possible previously. These AFM images have been used to independently calculate adsorption density values through offline fast Fourier transform (FFT) analysis. The adsorption density values measured from in situ FT-IR/IRS spectra and from AFM images showed good agreement and provide further validation of the FT-IR/IRS adsorption density equation in the low concentration range.

Investigation of radio frequency plasma for the growth of diamond like carbon films

2012 ◽  
Vol 19 (3) ◽  
pp. 033515 ◽  
Author(s):  
Ishpal ◽  
Sushil Kumar ◽  
Neeraj Dwivedi ◽  
C. M. S. Rauthan
Keyword(s):  
Radio Frequency ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Radio Frequency Plasma ◽  
Frequency Plasma
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