Direct Growth of AIN Thin Layer on (111)Si Substrate by RF-MBE

1998 ◽  
Vol 512 ◽  
Author(s):  
Naoki Ohshima ◽  
Hiroo Yonezu ◽  
Shinobu Uesugi ◽  
Keisuke Gotoh ◽  
Seiji Yamahira
Keyword(s):  
High Energy ◽  
Rf Plasma ◽  
Si Substrate ◽  
Plasma Gun ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nitridation Process ◽  
Migration Enhanced Epitaxy ◽  
Direct Growth

ABSTRACTThe nitridation process of (111)Si surface has been studied by in-situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements. It has been clarified that the nitridation of the Si surface is occurred even if the shutter of the discharged rf-plasma gun is closed. The growth process of AIN epilayer on the Si substrate by migration enhanced epitaxy (MEE) has been investigated by in-situ RHEED and atomic force microscopy (AFM) observations. It has been found that the AIN epilayer is directly grown on (111)Si by MEE growth.

scholarly journals In Situ Initial Growth Studies of SrTiO3 on SrTiO3 by Time Resolved High Pressure RHEED

1998 ◽  
Vol 526 ◽  
Author(s):  
Gertjan Koster ◽  
Guus J.H.M. Rijnders ◽  
Dave H.A. Blank ◽  
Horst Rogalla
Keyword(s):  
High Pressure ◽  
Pulsed Laser ◽  
High Energy ◽  
Initial Growth ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Temperatures ◽  
Substrate Surfaces

AbstractThe initial growth of pulsed laser deposited SrTiO3 on SrTiO3 has been studied using high pressure Reflection High Energy Electron Diffraction (RHEED) and Atomic Force Microscopy (AFM). For this, we developed a Pulsed Laser Deposition (PLD)-RHEED system, with the possibility to study the growth and to monitor the growth rates, in situ, at typical PLD pressures (10-50 Pa). Using perfect single crystal SrTiO3 substrate surfaces, we observe true 2D intensity oscillations at different temperatures. Simultaneously, information on the diffusion of the deposited material on the surface could be extracted from the relaxation of the intensity after each laser pulse. The characteristic times depend on pressure and temperature as well as the 2D coverage during growth.

scholarly journals Evidence of Carboxyl Modification of Hydrogen-Free Diamond-Like Carbon Films Assisted by Radio Frequency Plasma in Vacuum

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Yuqi Xue ◽  
Zixin Wang ◽  
Jun Wang ◽  
Changji Hu ◽  
Fangyan Xie ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Films ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Spectra Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Ft Ir

Modification of hydrogen-free diamond-like carbon (DLC) is presented, with acrylic acid (AA) vapor carried into a vacuum chamber by argon and with the in situ assistance of low-power radio frequency (RF) plasma at a temperature below 100°C. Measured by atomic force microscopy (AFM) technique, the roughness (Ra) of the DLC was 1.063±0.040 nm. XPS and FT-IR spectra analysis showed that carboxyl groups were immobilized on the surface of the DLC films, with about 40% of carboxyl group area coverage. It was found that the RF plasma and reaction time are important in enhancing the modification rate and efficiency.

Drastic Change in the Gan Film Quality by In-Situ Controlling Surface Reconstructions In Gsmbe

1997 ◽  
Vol 482 ◽  
Author(s):  
X. Q. Shen ◽  
S. Tanaka ◽  
S. Iwai ◽  
Y. Aoyagi
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Surface Reconstructions ◽  
Gan Film

AbstractGaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

scholarly journals In Situ Initial Growth Studies of (Sr, Ca)CuO2 ON SrTiO3 by High Pressure Rheed

1997 ◽  
Vol 502 ◽  
Author(s):  
Gertjan Koster ◽  
Guus J. H. M. Runders ◽  
Dave H. A. Blank ◽  
Horst Rogalla
Keyword(s):  
High Pressure ◽  
Pulsed Laser ◽  
High Energy ◽  
Initial Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Studies ◽  
Layer Structures ◽  
First Results

ABSTRACTThe initial growth of pulsed laser deposited SrCuO2 (SCO) and CaCuO2 (CCO) on SrTiO3 has been studied using high pressure Reflection High Energy Electron Diffraction (RHEED) and Atomic Force Microscopy (AFM). For this, we developed a Pulsed Laser Deposition (PLD)- RHEED system, with the possibility to study the growth and to monitor the growth rates, in situ, at typical PLD pressures (10–50 Pa). In case of depositing oxide materials, high oxygen pressures are desired. Moreover, crystallinity can be improved using higher oxygen pressures and therefore higher temperatures. With this technique we are able to obtain atomically flat films, a first step towards multi-layer structures.In this paper we present the initial growth studies of SCO and first results incorporating CCO layers in a SCO matrix.

Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
N. Onojima ◽  
J. Suda ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Epitaxial Relationship ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTAluminum nitride (AlN) has been grown on 6H-silicon carbide (SiC) substrates with the non-polar (1120) face using rf plasma-assisted molecular-beam epitaxy (rf-MBE). Reflection high-energy electron diffraction (RHEED) revealed that AlN and 6H-SiC (1120) had an exact epitaxial relationship, i.e., [1120]AlN|[1120]SiC and [0001]AlN∥[0001]SiC. From the result of microscopic Raman scattering spectroscopy, the stacking structure of the AlN epitaxial layer was suggested to be a 2H structure, not a 6H structure. A directly grown AlN layer and layer with AlN low-temperature (LT) buffer layer were investigated based on atomic force microscopy (AFM) and X-ray diffraction (XRD).

Preparation of (111)-Oriented Pt Electrode Films with Quasi-Monocrystal Properties on MgO/TiN Buffered Si(100) by PLD

2007 ◽  
Vol 280-283 ◽  
pp. 823-826 ◽  
Author(s):  
Tong Lai Chen ◽  
Xiao Min Li
Keyword(s):  
High Energy ◽  
Layer Growth ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Pt Electrode ◽  
Force Microscopy ◽  
Atomic Force

Atomic-scale smooth Pt electrode films have been deposited on MgO/TiN buffered Si (100) by the pulsed laser deposition (PLD) technique. The whole growth process of the multilayer films was monitored by using in-situ reflection high energy electron diffraction (RHEED) apparatus. The Pt/MgO/TiN/Si(100) stacked structure was also characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The HREED observations show that the growth mode of the Pt electrode film is 2D layer-by-layer growth. It is found that the (111)-oriented Pt electrode film has a crystallinity comparable to that of monocrystals. The achievement of the quasi-single-crystal Pt electrode film with an atomic-scale smooth surface is ascribed to the improved crystalline quality of the MgO film.

MBE Growth of IV-VI Nanowires on a Self-organized Template

2010 ◽  
Vol 1258 ◽  
Author(s):  
Lee Andrew Elizondo ◽  
Patrick McCann ◽  
Joel Keay ◽  
Matthew Johnson
Keyword(s):  
Quantum Wires ◽  
High Energy ◽  
Ex Situ ◽  
Mbe Growth ◽  
One Dimensional ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Low Dimensional

AbstractWe present the experimental results for the first known molecular beam epitaxy (MBE) growth of quasi-one-dimensional PbSe wires on technologically relevant silicon.In this work, we describe the growth and characterization of low-dimensional IV-VI semiconductors as they evolve from one-dimensional dot/dot-chains to one-dimensional structures on a self-organized template epitaxially grown on Si(110). In situ and ex situ characterization were performed at various stages throughout growth by reflection high energy electron diffraction, scanning electron microscopy, and non-contact atomic force microscopy. Initial growths resulted in some preferential alignment of the PbSe dot-chains parallel to the self-organized template in the [-110] direction. By reducing the substrate temperature and increasing the supplemental Se flux, the morphology of dot-chains extend into lengthened one-dimensional structures. This is an important milestone in the fabrication of PbSe quantum wires on technologically relevant silicon.

STRUCTURAL AND MAGNETIC PROPERTIES OF EPITAXIAL Ni80Fe20 THIN FILMS ON Cu/Si

1995 ◽  
Vol 02 (04) ◽  
pp. 427-437 ◽  
Author(s):  
I. HASHIM ◽  
H.S. JOO ◽  
H.A. ATWATER
Keyword(s):  
Magnetic Properties ◽  
Domain Walls ◽  
High Energy ◽  
Ex Situ ◽  
Misfit Dislocations ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Crystal Films

Single-crystal films of permalloy ( Ni 80 Fe 20) were grown on Cu (001) seed layers oriented epitaxially with Si (001). The microstructural properties were measured using in-situ reflection high-energy electron diffraction, and ex-situ transmission electron microscopy, x-ray diffraction, and atomic force microscopy, whereas the magnetic properties were probed using in-situ magneto-optic Kerr effect and ex-situ vibrating sample magnetometry. Anisotropic magnetoresistance and resistivity for some of the samples were also measured. The coercivity for thinner (≤5 nm) Ni 80 Fe 20 was significantly higher (10–20 Oersteds) than polycrystalline films deposited on SiO 2/ Si , and was also higher than films deposited on lattice-matched Cu x Ni 1–x alloys. These magnetic properties were explained using a theoretical model involving interaction of domain walls with defects such as misfit dislocations and coherent islands, due to the mismatch between Ni 80 Fe 20 and Cu .

Dynamics of InAs Quantum Dots Formation on AlAs and GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
M. Yakimov ◽  
V. Tokranov ◽  
S. Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Single Layer ◽  
High Energy ◽  
Ex Situ ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Kinetics Of

AbstractWe have studied the formation of InAs quantum dots (QDs) grown by molecular beam epitaxy on top of GaAs and 2 ML-thick AlAs layers in the temperature range from 350 to 500°C. In-situ reflection high energy electron diffraction (RHEED) patterns were recorded in real time during the growth and analyzed to characterize the 2D-to-3D transition on the surface, including QD formation, and ripening process. The kinetics of QD formation was studied using the InAs growth rates ranging from 0.01 to 1 ML/s and different ratios of As2/In fluxes. RHEED patterns and ex-situ atomic force microscopy images were analyzed to reveal the development of sizes and shapes of the single-layer and stacked QD ensembles. The critical InAs coverage for QD formation was shown to be consistently higher for dots grown on the AlAs overlayer than for those grown on GaAs surface. Self-assembly of multilayer QD stacks revealed the reduction of the critical thickness for dots formed in the upper layers.

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