scholarly journals Plastic Deformation in Profile-Coated Elliptical KB Mirrors

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-3 ◽  
Author(s):  
Chian Liu ◽  
R. Conley ◽  
J. Qian ◽  
C. M. Kewish ◽  
W. Liu ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Stress Relaxation ◽  
Low Temperature ◽  
Vacuum Annealing ◽  
Film Stress ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
White Beam

Profile coating has been successfully applied to produce elliptical Kirkpatrick-Baez (KB) mirrors using both cylindrical and flat Si substrates. Previously, focusing widths of 70 nm with 15-keV monochromatic and 80 nm with white beam were achieved using a flat Si substrate. Now, precision elliptical KB mirrors with sub-nm figure errors are produced with both Au and Pt coatings on flat substrates. Recent studies of bare Si-, Au-, and Pt-coated KB mirrors under prolonged synchrotron X-ray radiation and low-temperature vacuum annealing will be discussed in terms of film stress relaxation and Si plastic deformation.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Controlling the Growth of ZnO-SiO2 Nanostructures Using Pt-Coated Si Substrate

2014 ◽  
Vol 548-549 ◽  
pp. 354-357 ◽  
Author(s):  
Amber Dea Marie V. Peguit ◽  
Rolando T. Candidato ◽  
Reynaldo M. Vequizo ◽  
Majvell Kay G. Odarve ◽  
Bianca Rae B. Sambo ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Active Sites ◽  
Zno Nanostructures ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Scanning Electron ◽  
Pronounced Peak

ZnO-SiO2 nanostructures were grown on both bare Si and Pt-coated Si substrates via chemical bath deposition (CBD). The grown nanostructures were characterized using Scanning Electron Microscope with Energy Dispersive X-ray Spectroscopy (SEM-EDS), Fourier Transform Infrared (FTIR) measurement and Ultraviolet-Visible (UV-Vis) absorption spectroscopy. Surface morphology results revealed that Pt-coated Si substrate have promoted the growth of ZnO-SiO2 nanostructures by providing more active sites for nucleation thus formation ZnO-SiO2 nanostructures were observed. It is believed that SiO2 will adhere to the non-polar sides of the grown ZnO nanostructures. This result is manifested in the FTIR spectra which showed a pronounced peak corresponding to ZnO-SiO2 grown on bare Si suggesting that more Si-O bonds are present. However, Pt-coating did not significantly affect the band gap of the grown ZnO-SiO2 nanostructures.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates

2007 ◽  
Vol 22 (5) ◽  
pp. 1214-1218 ◽  
Author(s):  
Hong-Liang Lu ◽  
Min Xu ◽  
Shi-Jin Ding ◽  
Wei Chen ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
Si Substrate ◽  
Interfacial Film ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Plasma Pretreatment

Al2O3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al2O3 films as well as the nature of their interlayers with Si substrates are characterized by x-ray reflectivity and spectroscopic ellipsometry techniques. The growth rates of Al2O3 films are 1.1 Å/cycle and 1.3 Å/cycle, respectively, on HF-last and NH3-plasma-nitrided surfaces. Al2O3 layer densities are rather independent of the number of growth cycles in all cases. The interfacial film thickness increases with the number of ALD cycles when deposited on an HF-last Si substrate. However, because SiOxNy inhibits oxygen diffusion, the interfacial film thickness is independent of the number of ALD cycles on the nitrided Si substrate.

Heterogeneous Strain Relaxation in GaAs on Si (100)

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Freundlich ◽  
G. Neu ◽  
A. Leycuras ◽  
R. Carles ◽  
C. Verie
Keyword(s):  
Residual Stress ◽  
Low Temperature ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Photoluminescence Excitation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Low Temperature Photoluminescence ◽  
Epilayer Surface

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

2010 ◽  
Vol 645-648 ◽  
pp. 147-150 ◽  
Author(s):  
Eiji Saito ◽  
Sergey Filimonov ◽  
Maki Suemitsu
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
High Rate ◽  
Si Substrate ◽  
Single Crystalline ◽  
Step Process ◽  
Si Substrates ◽  
Sic Film

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers

1994 ◽  
Vol 338 ◽  
Author(s):  
Frank Baldwin ◽  
Paul H. Holloway ◽  
Mark Bordelon ◽  
Thomas R. Watkins
Keyword(s):  
Stress Relaxation ◽  
Low Temperature ◽  
Thermal Cycling ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Silicon Wafers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Aluminum Metallization ◽  
Low Temperature Treatments

ABSTRACTThe stresses in Al-0.75w%Si-0.5w%Cu unpatterned metallization on silicon wafers have been measured using substrate curvature and x-ray diffraction techniques after quenching in liquid nitrogen. Stresses were measured with and without phospho-silicate glass overlayers and SiO2 underlayers, and thermal cycling followed by relaxation at room temperature. It was found that cooling the substrates to 77 K and warming to room temperature caused the metallization stress to go from tensile to compressive. Subsequent heating of the substrates to above ∼70°C followed by cooling to room temperature caused the stress to become tensile. Both compressive and tensile stresses were found to relax at room temperature with a time constant of 2.3 ± 0.2 hours. The magnitude of stress relaxation was a function of temperature, being about 20 MPa after heating to 240°C. The metallization exhibited both compressive and tensile flow stresses of ∼100 MPa near room temperature.

Thermal Residual Stress Relaxation in Sputtered ZnO Film on (100) Si Substrate Studied In Situ by Synchrotron X-Ray Diffraction

2011 ◽  
Vol 681 ◽  
pp. 127-132
Author(s):  
Christopher Krauss ◽  
Guillaume Geandier ◽  
Florine Conchon ◽  
Pierre Olivier Renault ◽  
Eric Le Bourhis ◽  
...  
Keyword(s):  
Residual Stress ◽  
Stress Relaxation ◽  
Structural Changes ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Compressive Stresses ◽  
Residual Stress Relaxation

Residual stress relaxation in sputtered ZnO films has been studied in-situ by synchrotron x-ray diffraction. The films deposited on (001) Si substrates were thermally treated from 25°C to 700°C. X-ray diffraction 2D patterns were captured continuously during the heating, plateau and cooling ramps. The corrections carried out for compensating the furnace drift are discussed. We first observe an increase of the intrinsic compressive stresses before stress relaxation starts to operate around 370°C. Then, thermal contraction upon cooling dominates so that overall, the large initial compressive film stresses turn to tensile after thermal treatment. The overall behaviour is discussed in terms of structural changes induced by the heat treatment.

Fabrication of Si1-xGex layer on Si substrate by Screen-Printing

MRS Advances ◽  
2019 ◽  
Vol 4 (13) ◽  
pp. 749-754 ◽  
Author(s):  
Masahiro Nakahara ◽  
Moeko Matsubara ◽  
Shota Suzuki ◽  
Shogo Fukami ◽  
Marwan Dhamrin ◽  
...  
Keyword(s):  
Screen Printing ◽  
Sige Layer ◽  
Phase Region ◽  
Si Substrate ◽  
Large Area ◽  
X Ray ◽  
Si Substrates ◽  
The Impact ◽  
Thick Layers ◽  
Metallization Process

AbstractThe impact of the Al and Ge ratio in the Al-Ge pastes are investigated for fabricating the single crystalline Si1-xGex thick layers on large area Si substrates by screen-printing metallization process. From X-ray reciprocal space maps, Ge fraction in the fabricated Si1-xGex thick layers are found to increase up to 40% with increasing the Ge ratio in the Al-Ge pastes. On the other hand, the interface of the Si and Si1-xGex layers are getting winding with increasing the Ge ratio in the Al-Ge pastes. The Al-Si-Ge phase diagram indicated that uniform SiGe layer can be fabricated by adjusting the Al-Ge ratio in the pastes within the liquid phase region.

Characterization of Epitaxial CoSi2 Films Grown on Si

1984 ◽  
Vol 41 ◽  
Author(s):  
A. H. Hamdi ◽  
M-A. Nicolet ◽  
Y. C. Kao ◽  
M. Tejwani ◽  
K. L. Wang
Keyword(s):  
High Temperature Annealing ◽  
Si Substrate ◽  
Chemical Cleaning ◽  
X Ray ◽  
Lattice Constants ◽  
Si Substrates ◽  
Preparation Techniques ◽  
Minimum Yield

AbstractX-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi2 films grown on <111> Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550–750°C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925°C for 10 min, Co and Si codeposition on a 580'C hot substrate. For such samples, a typical x-ray perpendicular strain is -2.08%, and parallel strain is -0.11%. This parallel strain implies that the growth has been accommodated by dislocations with a spacing of ,∼ 2000 Å. The values of strain are consistent with the published lattice constants of Si and CoSi2 and Poisson's ratio of 0.28. The minimum yield in the channeling spectra of these films is. ∼ 3.6%, which is only slightly higher than that of <111> virgin Si.

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