Fabrication of Si1-xGex layer on Si substrate by Screen-Printing

MRS Advances ◽  
2019 ◽  
Vol 4 (13) ◽  
pp. 749-754 ◽  
Author(s):  
Masahiro Nakahara ◽  
Moeko Matsubara ◽  
Shota Suzuki ◽  
Shogo Fukami ◽  
Marwan Dhamrin ◽  
...  
Keyword(s):  
Screen Printing ◽  
Sige Layer ◽  
Phase Region ◽  
Si Substrate ◽  
Large Area ◽  
X Ray ◽  
Si Substrates ◽  
The Impact ◽  
Thick Layers ◽  
Metallization Process

AbstractThe impact of the Al and Ge ratio in the Al-Ge pastes are investigated for fabricating the single crystalline Si1-xGex thick layers on large area Si substrates by screen-printing metallization process. From X-ray reciprocal space maps, Ge fraction in the fabricated Si1-xGex thick layers are found to increase up to 40% with increasing the Ge ratio in the Al-Ge pastes. On the other hand, the interface of the Si and Si1-xGex layers are getting winding with increasing the Ge ratio in the Al-Ge pastes. The Al-Si-Ge phase diagram indicated that uniform SiGe layer can be fabricated by adjusting the Al-Ge ratio in the pastes within the liquid phase region.

Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
T. Eshita ◽  
T. Suzuki ◽  
T. Hara ◽  
F. Mieno ◽  
Y. Furumura ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
Growth Technique ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Structure ◽  
Sic Films

AbstractWe developed a heteroepitaxial growth technique for large-area β-SiC films on Si substrates without buffer layers at 850ºC and 1000ºC. The substrates were vicinal 4-inch (111) Si wafers. The β-SiC films had smooth surfaces and were crack-free. X-ray diffraction and electron diffraction analysis revealed that the films grown at 1000ºC were single crystals. Satisfactory characteristics were obtained in aMOSFET with a β-SiC/Si02/poly-Si substrate structure. Our evaluations indicate that the β-SiC films were high-quality crystals.

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si

2009 ◽  
Vol 615-617 ◽  
pp. 149-152 ◽  
Author(s):  
Andrea Severino ◽  
Ruggero Anzalone ◽  
Corrado Bongiorno ◽  
M. Italia ◽  
Giuseppe Abbondanza ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
X Ray ◽  
Si Substrates ◽  
Fault Density ◽  
Transmission Electron ◽  
Pole Figures ◽  
Sic Films ◽  
Miscut Angle

The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3° to 6° along <110> and <11 >. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111)Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.

Controlling the Growth of ZnO-SiO2 Nanostructures Using Pt-Coated Si Substrate

2014 ◽  
Vol 548-549 ◽  
pp. 354-357 ◽  
Author(s):  
Amber Dea Marie V. Peguit ◽  
Rolando T. Candidato ◽  
Reynaldo M. Vequizo ◽  
Majvell Kay G. Odarve ◽  
Bianca Rae B. Sambo ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Active Sites ◽  
Zno Nanostructures ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Scanning Electron ◽  
Pronounced Peak

ZnO-SiO2 nanostructures were grown on both bare Si and Pt-coated Si substrates via chemical bath deposition (CBD). The grown nanostructures were characterized using Scanning Electron Microscope with Energy Dispersive X-ray Spectroscopy (SEM-EDS), Fourier Transform Infrared (FTIR) measurement and Ultraviolet-Visible (UV-Vis) absorption spectroscopy. Surface morphology results revealed that Pt-coated Si substrate have promoted the growth of ZnO-SiO2 nanostructures by providing more active sites for nucleation thus formation ZnO-SiO2 nanostructures were observed. It is believed that SiO2 will adhere to the non-polar sides of the grown ZnO nanostructures. This result is manifested in the FTIR spectra which showed a pronounced peak corresponding to ZnO-SiO2 grown on bare Si suggesting that more Si-O bonds are present. However, Pt-coating did not significantly affect the band gap of the grown ZnO-SiO2 nanostructures.

The Impact of Sinter and Thermoprint on Film Formation of nanoTiO2 Slurry

2014 ◽  
Vol 881-883 ◽  
pp. 1431-1434
Author(s):  
Jun Qian ◽  
Man Liu ◽  
Yi Hua Zhou ◽  
Tao Lin Ma ◽  
Zi Qiang Zhu ◽  
...  
Keyword(s):  
Screen Printing ◽  
Film Formation ◽  
Inorganic Pigments ◽  
X Ray Diffraction ◽  
Adhesion Test ◽  
X Ray ◽  
High Temperature And Pressure ◽  
Film Forming ◽  
Temperature And Pressure ◽  
The Impact

nanoTiO2 is one of the most important inorganic pigments in many different fields. The effect of sinter and thermoprint on film-forming properties of nanoTiO2 in screen printing were studied in this paper. Compared with sintering, Thermoprint uses high temperature and pressure to make nanoparticles more tight. By scanning electron microscopy (SEM), X-ray diffraction (XRD) and Coating Adhesion Test, the better film-formation properties of thermoprint are demonstrated.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates

2007 ◽  
Vol 22 (5) ◽  
pp. 1214-1218 ◽  
Author(s):  
Hong-Liang Lu ◽  
Min Xu ◽  
Shi-Jin Ding ◽  
Wei Chen ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
Si Substrate ◽  
Interfacial Film ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Plasma Pretreatment

Al2O3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al2O3 films as well as the nature of their interlayers with Si substrates are characterized by x-ray reflectivity and spectroscopic ellipsometry techniques. The growth rates of Al2O3 films are 1.1 Å/cycle and 1.3 Å/cycle, respectively, on HF-last and NH3-plasma-nitrided surfaces. Al2O3 layer densities are rather independent of the number of growth cycles in all cases. The interfacial film thickness increases with the number of ALD cycles when deposited on an HF-last Si substrate. However, because SiOxNy inhibits oxygen diffusion, the interfacial film thickness is independent of the number of ALD cycles on the nitrided Si substrate.

Recent advances in heteroepitaxial Ge/Si(100) and Ge/Si(l 11)

1994 ◽  
Vol 52 ◽  
pp. 838-839
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Pickett ◽  
M. L. Timmons ◽  
T. P. Humphreys ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Mobility ◽  
Epitaxial Films ◽  
Focal Plane Arrays ◽  
Si Substrate ◽  
Large Area ◽  
Lattice Match ◽  
Temperature Growth ◽  
X Ray ◽  
Indium Bump

Heteroepitaxial Ge-on-Si could have many applications which include: high mobility p-channel fieldeffect transistors (FETs), large area Ge-based IR or X-ray detectors, or as a substrate for the growth of other epitaxial semiconductors. In particular, the close lattice match between Ge and GaAs and Ge and ZnSe offers a potential for Ge to be used as an interlayer for a GaAs/Si or ZnSe/Si technology.Additionally, with the Si substrate as the "foundation" for further epitaxial semiconductors, thereisa built-in thermal match for any device that must be intimately bonded to Si-based circuitry. Thisis particularly critical in the case of HgCdTe IR focal plane arrays that are indium bump-bonded to aSi multiplexer which will experience thermal cycling in use. This contribution briefly reviews some ofour recent results in the high temperature growth of Ge epitaxial films on Si(100) and Si(l 11) substrates which are being developed for use as a template for HgCdTe/CdZnTe growth.

Characterization of Epitaxial CoSi2 Films Grown on Si

1984 ◽  
Vol 41 ◽  
Author(s):  
A. H. Hamdi ◽  
M-A. Nicolet ◽  
Y. C. Kao ◽  
M. Tejwani ◽  
K. L. Wang
Keyword(s):  
High Temperature Annealing ◽  
Si Substrate ◽  
Chemical Cleaning ◽  
X Ray ◽  
Lattice Constants ◽  
Si Substrates ◽  
Preparation Techniques ◽  
Minimum Yield

AbstractX-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi2 films grown on <111> Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550–750°C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925°C for 10 min, Co and Si codeposition on a 580'C hot substrate. For such samples, a typical x-ray perpendicular strain is -2.08%, and parallel strain is -0.11%. This parallel strain implies that the growth has been accommodated by dislocations with a spacing of ,∼ 2000 Å. The values of strain are consistent with the published lattice constants of Si and CoSi2 and Poisson's ratio of 0.28. The minimum yield in the channeling spectra of these films is. ∼ 3.6%, which is only slightly higher than that of <111> virgin Si.

Laser Recrystallization of InP Films on Oxidized Si Substrate

1985 ◽  
Vol 53 ◽  
Author(s):  
Li Xiqiang ◽  
Zhu Weiwen ◽  
Lin Chenglu ◽  
Wang Weiyuan ◽  
Tsou Shihchang
Keyword(s):  
Grain Size ◽  
Laser Power ◽  
Beam Diameter ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Laser Recrystallization ◽  
Before And After

ABSTRACTThe InP films with thickness of 1-2 µm and resistivity of 10-10−3Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.

scholarly journals Plastic Deformation in Profile-Coated Elliptical KB Mirrors

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-3 ◽  
Author(s):  
Chian Liu ◽  
R. Conley ◽  
J. Qian ◽  
C. M. Kewish ◽  
W. Liu ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Stress Relaxation ◽  
Low Temperature ◽  
Vacuum Annealing ◽  
Film Stress ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
White Beam

Profile coating has been successfully applied to produce elliptical Kirkpatrick-Baez (KB) mirrors using both cylindrical and flat Si substrates. Previously, focusing widths of 70 nm with 15-keV monochromatic and 80 nm with white beam were achieved using a flat Si substrate. Now, precision elliptical KB mirrors with sub-nm figure errors are produced with both Au and Pt coatings on flat substrates. Recent studies of bare Si-, Au-, and Pt-coated KB mirrors under prolonged synchrotron X-ray radiation and low-temperature vacuum annealing will be discussed in terms of film stress relaxation and Si plastic deformation.

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