scholarly journals Effect of Annealing Atmosphere on the Properties of Electrochemically Deposited Cu2ZnSnS4 (CZTS) Thin Films

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
B. S. Pawar ◽  
S. M. Pawar ◽  
K. V. Gurav ◽  
S. W. Shin ◽  
J. Y. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Trisodium Citrate ◽  
Band Gap Energy ◽  
Single Step ◽  
Complexing Agent ◽  
Annealing Atmosphere ◽  
X Ray Diffraction ◽  
Electrochemically Deposited ◽  
Diffraction Peaks ◽  
Czts Thin Films

The Cu2ZnSnS4 (CZTS) thin films have been electrochemically deposited from a weak acidic medium (pH 4.50~5.00) onto Mo- coated and ITO-coated glass substrate by using single-step electrodeposition method. Trisodium citrate was used as a complexing agent. The effect of annealing atmospheres such as Ar, N2, N2+H2S on the structural, morphological, compositional, and optical properties of CZTS thin films has been investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and optical absorption techniques, respectively. XRD studies reveal that the as-deposited CZTS film is amorphous in nature. Upon annealing in different atmospheres, a relatively more intense and sharper diffraction peaks (112), (200), (220), and (312) of kesterite crystal structure with uniform and densely packed surface morphology are observed in N2+H2S atmosphere. Absorption study shows that the band gap energy of as-deposited CZTS thin film is 2.8 eV whereas after annealing, it is found to be 1.48, 1.76, and 1.53 eV for Ar, N2, N2+H2S atmospheres.

Growth of CuInSe2 thin films by a single-step electrodeposition technique using acetonitrile as complexing agent

2012 ◽  
Vol 90 (10) ◽  
pp. 981-986
Author(s):  
Y.C. Goswami ◽  
P Rajaram
Keyword(s):  
Thin Films ◽  
Single Step ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
Optical Studies ◽  
X Ray ◽  
Depth Profiles ◽  
Direct Band ◽  
Uniform Composition

Thin films of CuInSe2 were grown on SnO2 coated glass microslides using a single-step electrodeposition technique. The bath was made up of a mixture of aqueous solutions of CuCl2, InCl3, and SeO2 with acetonitrile (CH3CN) acting as a complexing agent. Voltametric studies suggest that acetonitrile is a suitable complexing agent, which helps in bringing the deposition potentials of Cu, In, and Se close to each other. The films were characterized by EDAX, SIMS, X-ray diffraction, and optical studies, which show that the material is CuInSe2, with a direct band gap of about 1 eV. The films were annealed in a Se atmosphere to improve their crystalline properties. X-ray diffractograms show that the peaks of CuInSe2, which are broad and of low intensity for as-grown films, become sharp and intense after annealing in Se atmosphere. SIMS depth profiles show that the films have a fairly uniform composition along the depth of the films.

Effect of complexing agent on the properties of electrochemically deposited Cu2ZnSnS4 (CZTS) thin films

2010 ◽  
Vol 257 (5) ◽  
pp. 1786-1791 ◽  
Author(s):  
B.S. Pawar ◽  
S.M. Pawar ◽  
S.W. Shin ◽  
D.S. Choi ◽  
C.J. Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Complexing Agent ◽  
Electrochemically Deposited ◽  
Czts Thin Films

Effect of Annealing Atmosphere on the Mg2Si Film Growth Deposited by Magnetron Sputtering

2010 ◽  
Vol 129-131 ◽  
pp. 290-294 ◽  
Author(s):  
Qing Quan Xiao ◽  
Quan Xie ◽  
Ke Jie Zhao ◽  
Zhi Qiang Yu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
Vacuum Annealing ◽  
Morphological Properties ◽  
Annealing Atmosphere ◽  
X Ray Diffraction ◽  
Gas Atmosphere ◽  
Diffraction Peaks ◽  
Ar Gas

Semiconducting Mg2Si films were fabricated on Si (111) substrates by magnetron sputtering and subsequent annealing, and the effects of annealing atmosphere on the Mg2Si film growth were studied. The structural and morphological properties of Mg2Si films were investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that annealing atmosphere was an important factor that affected the growth of Mg2Si thin films, and vacuum annealing was not suitable for preparing Mg2Si thin films. Only Si (111) substrate diffraction peaks were observed, and no Mg2Si diffraction peak was observed when the first six Mg/Si samples were annealed under vacuum annealing condition. However, many Mg2Si diffraction peaks were observed besides the Si substrate diffraction peaks when the second six Mg/Si samples were annealed under Ar gas atmosphere. In addition, compact and smooth Mg2Si thin films annealed under Ar gas atmosphere were obtained.

Photoferroelectric Effects of Undoped and Extrinsic Ion-Doped PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Li Li ◽  
Chhiu-Tsu Lin ◽  
Martin S. Leung ◽  
Paul M. Adams ◽  
Russell A. Lipeles
Keyword(s):  
Thin Films ◽  
Optical Memory ◽  
Hysteresis Loops ◽  
Band Gap Energy ◽  
Acetate Solution ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
Photocurrent Spectroscopy ◽  
Visible Wavelengths ◽  
Mn Doped

ABSTRACTDeposition by aqueous acetate solution (DAAS) technique was used to synthesize undoped and 5 wt% Cr-, Mn-, Eu-, or Pr-doped Pb(Zr0.53Ti0.47O3 [PZT] thin films. The dopant was incorporated into PZT either in the precursor coating solution or via thermal diffusion into undoped PZT. X-ray diffraction shows that ion-doped PZT thin films on Pt<l 1 l>/Ti/SiO2/Si<100> (in particular, the Mn- and Eu- doped samples) display better crystallinity and smaller lattice parameters than those on sapphire substrates. The enhancement of photoconductivity at visible wavelengths measured by excitation photocurrent spectroscopy (EPS) goes as Cr-doped∼Mn-doped > Eu-doped ∼ Pr-doped. Only Mn-doped PZT perovskites have the band gap energy red-shifted to 360 nm from 330 nm. The space charge (or photovoltaic) field was estimated to be < 8 v when about 100 v was applied to ion-doped PZT thin films with 260 or 320 nm light. By using laser irradiation at selected wavelengths and switching the polarity of applied bias voltage, the expected changes in resistance (Ry) and remanent polarization (±Pr) states were observed in the P-E hysteresis loops. The possible applications of extrinsic ion-doped PZT thin films in optical memory devices are discussed.

The Sensitivity of V2O5:Sm2O3 Thin Films against NO2 Toxic Gas

2021 ◽  
Vol 19 (3) ◽  
pp. 69-77
Author(s):  
A.J. Noori ◽  
R.A. Ahmed ◽  
I.M. Ibrahim
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Homogeneous Distribution ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Method ◽  
Operation Temperature ◽  
Best Response ◽  
Diffraction Peaks ◽  
P Type

Vanadium oxide V2O5 thin films with variation doping ratios of Sm2O5 (2, 4, 6, and 8 % wt.) on corn glass and p- type silicon substrates were prepared by pulsed laser method. The X-ray diffraction peaks for V2O5 decreases with doping ratio of Sm2O3. FESEM images for V2O5 and doped thin films illustrates clusters with a homogeneous distribution in nano scale. The energy gap varied upon the increment of doping concentration, starting from 2.610 eV to 2.7 eV. Gas sensor measurement of pure and doped V2O5 demonstrated a sensitivity to NO2 gas, and the sensitivity expanded upon the increment of operation temperature. The greatest sensitivity was found to be about 99%, while best response time of 10s and recovery time of 18s were recorded using the 4% Sm2O3 sample at 50 °C.

Effect of concentration of trisodium citrate complexing agent on spray-synthesized ZnS thin films

2020 ◽  
Author(s):  
P.O. Offor ◽  
S.N. Ude ◽  
G.M. Whyte ◽  
F.U. Otung ◽  
I.G. Madiba ◽  
...  
Keyword(s):  
Thin Films ◽  
Trisodium Citrate ◽  
Complexing Agent

Preparation of Cu2ZnSnS4 Thin Films by Successive Ionic Layer Adsorption and Reaction (SILAR) Method for Supercapacitor Applications

2020 ◽  
Vol 20 (10) ◽  
pp. 6235-6244 ◽  
Author(s):  
A. Murugan ◽  
V. Siva ◽  
A. Shameem ◽  
S. Asath Bahadur
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Electrochemical Impedance ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Layer Adsorption ◽  
Diffraction Patterns ◽  
Czts Thin Films ◽  
Supercapacitor Applications ◽  
Ionic Layer

The Cu2ZnSnS4 (CZTS) thin films have been prepared at different deposition cycles, deposited on a glass substrate by successive ionic layer adsorption and reaction (SILAR) method followed by the annealing process at elevated temperature. The investigations on the films have been carried out to understand and confirm its structure, functional group present, crystalline morphology, optical and electrochemical behavior. The powder X-ray diffraction patterns recorded indicate that the deposited films are formed in the tetragonal structure. Other parameters like grain size, dislocation density, and microstrain are also calculated. The uniform surface of the films with spherical shaped morphology has been observed by Scanning Electron Microscopy, and the elemental compositions have been confirmed by EDAX. Electrochemical behavior such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge–discharge analysis have been carried out by electrochemical workstation. The modified electrode exhibits maximum specific capacitance value as 416 F/g for a pure sample. Optical studies have shown that the band gaps are estimated between 1.40 eV and 1.57 eV.

Thermoelectric Characterization of Ti and In Double-Doped Cobalt Antimony Thin Films

2016 ◽  
Vol 847 ◽  
pp. 143-147
Author(s):  
Ya Dan Li ◽  
Zhuang Hao Zheng ◽  
Ping Fan ◽  
Jing Ting Luo ◽  
Guang Xing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Flexible Substrate ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Alloy Target ◽  
Diffraction Peaks ◽  
Thermoelectric Thin Films ◽  
Antimony Alloy

CoSb3 thermoelectric thin films were prepared on polyimide flexible substrate by radio frequency (RF) magnetron sputtering technology using a cobalt antimony alloy target. Ti and In were added into CoSb3 thin films by co-sputtering. The influence of Ti and In on the thermoelectric properties of CoSb3 thin films was investigated. X-ray diffraction result shows that the major diffraction peaks of all the thin films match the standard peaks related to the CoSb3 phase. The sample has best thermoelectric properties when the Ti sputtering time was 1min and In sputtering time was 30 seconds.

scholarly journals Optimization of Chemical Bath Deposited Mercury Chromium Sulphide Thin Films on Glass Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
H. B. Patil ◽  
S. V. Borse
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Parameters ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Edax Analysis ◽  
Cubic Structure ◽  
Semiconducting Thin Films

Semiconducting thin films of ternary () have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The X-ray diffraction deposited thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

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