Effect of complexing agent on the properties of electrochemically deposited Cu2ZnSnS4 (CZTS) thin films

2010 ◽  
Vol 257 (5) ◽  
pp. 1786-1791 ◽  
Author(s):  
B.S. Pawar ◽  
S.M. Pawar ◽  
S.W. Shin ◽  
D.S. Choi ◽  
C.J. Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Complexing Agent ◽  
Electrochemically Deposited ◽  
Czts Thin Films

scholarly journals Effect of Annealing Atmosphere on the Properties of Electrochemically Deposited Cu2ZnSnS4 (CZTS) Thin Films

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
B. S. Pawar ◽  
S. M. Pawar ◽  
K. V. Gurav ◽  
S. W. Shin ◽  
J. Y. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Trisodium Citrate ◽  
Band Gap Energy ◽  
Single Step ◽  
Complexing Agent ◽  
Annealing Atmosphere ◽  
X Ray Diffraction ◽  
Electrochemically Deposited ◽  
Diffraction Peaks ◽  
Czts Thin Films

The Cu2ZnSnS4 (CZTS) thin films have been electrochemically deposited from a weak acidic medium (pH 4.50~5.00) onto Mo- coated and ITO-coated glass substrate by using single-step electrodeposition method. Trisodium citrate was used as a complexing agent. The effect of annealing atmospheres such as Ar, N2, N2+H2S on the structural, morphological, compositional, and optical properties of CZTS thin films has been investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and optical absorption techniques, respectively. XRD studies reveal that the as-deposited CZTS film is amorphous in nature. Upon annealing in different atmospheres, a relatively more intense and sharper diffraction peaks (112), (200), (220), and (312) of kesterite crystal structure with uniform and densely packed surface morphology are observed in N2+H2S atmosphere. Absorption study shows that the band gap energy of as-deposited CZTS thin film is 2.8 eV whereas after annealing, it is found to be 1.48, 1.76, and 1.53 eV for Ar, N2, N2+H2S atmospheres.

The Concentration Effect of Complexing Agent on the Morphology and Optoelectronic Properties of Electrochemically Deposited n-type Cu2O Thin Films

2019 ◽  
Vol 48 (8) ◽  
pp. 4830-4839 ◽  
Author(s):  
Abdelmadjid Herbadji ◽  
Ibrahim Yaacoub Bouderbala ◽  
Loubna Mentar ◽  
Mohamed Redha Khelladi ◽  
Amor Azizi
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
Concentration Effect ◽  
Complexing Agent ◽  
Electrochemically Deposited ◽  
Cu2o Thin Films

scholarly journals Effect of Prefabricated Layer Structure on Properties of CZTS Thin Films and Solar Cells

2020 ◽  
Vol 571 ◽  
pp. 012033
Author(s):  
Wenbin Hao ◽  
Jinze Li ◽  
Wei Li ◽  
Jiansheng Zhao ◽  
Jianfeng Chen
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Layer Structure ◽  
Czts Thin Films

Synthesis and characterisation of ZnS thin films obtained without complexing agent by the chemical bath technique

2021 ◽  
pp. 1-13
Author(s):  
I. J. González-Chan ◽  
A. Pat-Herrera ◽  
A. I. Trejo-Ramos ◽  
A. I. Oliva
Keyword(s):  
Thin Films ◽  
Complexing Agent

Influences of alkali incorporation and electrodeposited metal layer on formation of MoS2 in CZTS thin films

2021 ◽  
Vol 134 ◽  
pp. 105943
Author(s):  
Jiao Wang ◽  
Yanping Wang ◽  
Haoran Li ◽  
Aimei Zhao ◽  
Bing Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Layer ◽  
Electrodeposited Metal ◽  
Czts Thin Films

The choice of Zn or ZnS layer in the stacked precursors for preparation of Cu2ZnSnS4 (CZTS) thin films

2020 ◽  
Vol 146 ◽  
pp. 106669 ◽  
Author(s):  
M.A. Olgar ◽  
A. Seyhan ◽  
A.O. Sarp ◽  
R. Zan
Keyword(s):  
Thin Films ◽  
Czts Thin Films
Sign in / Sign up

Export Citation Format

Share Document