Growth of CuInSe2 thin films by a single-step electrodeposition technique using acetonitrile as complexing agent

2012 ◽  
Vol 90 (10) ◽  
pp. 981-986
Author(s):  
Y.C. Goswami ◽  
P Rajaram
Keyword(s):  
Thin Films ◽  
Single Step ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
Optical Studies ◽  
X Ray ◽  
Depth Profiles ◽  
Direct Band ◽  
Uniform Composition

Thin films of CuInSe2 were grown on SnO2 coated glass microslides using a single-step electrodeposition technique. The bath was made up of a mixture of aqueous solutions of CuCl2, InCl3, and SeO2 with acetonitrile (CH3CN) acting as a complexing agent. Voltametric studies suggest that acetonitrile is a suitable complexing agent, which helps in bringing the deposition potentials of Cu, In, and Se close to each other. The films were characterized by EDAX, SIMS, X-ray diffraction, and optical studies, which show that the material is CuInSe2, with a direct band gap of about 1 eV. The films were annealed in a Se atmosphere to improve their crystalline properties. X-ray diffractograms show that the peaks of CuInSe2, which are broad and of low intensity for as-grown films, become sharp and intense after annealing in Se atmosphere. SIMS depth profiles show that the films have a fairly uniform composition along the depth of the films.

scholarly journals Annealing Effect on One Step Electrodeposited CuSbSe2 Thin Films

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 75
Author(s):  
Khadija Abouabassi ◽  
Lahoucine Atourki ◽  
Andrea Sala ◽  
Mouaad Ouafi ◽  
Lahcen Boulkaddat ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Single Step ◽  
Annealing Effect ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
X Ray ◽  
Glass Substrates ◽  
Orientation Change ◽  
One Step

The purpose of this work is to study the influence of the annealing temperature on the structural, morphological, compositional and optical properties of CuSbSe2 thin films electrodeposited in a single step. CuSbSe2 thin films were grown on fluorine-doped tin oxide (FTO)/glass substrates using the aqueous electrodeposition technique, then annealed in a tube furnace under nitrogen at temperatures spanning from 250 to 500 °C. The resulting films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis, Raman spectroscopy and UV-Vis spectrophotometer. The annealing temperature plays a fundamental role on the films structural properties; in the range 250–350 °C the formation of pure CuSbSe2 phase from electrodeposited binary selenides occurs. From 400 to 500 °C, CuSbSe2 undergoes a preferential phase orientation change, as well as the increasing formation of copper-rich phases such as Cu3SbSe3 and Cu3SbSe4 due to the partial decomposition of CuSbSe2 and to the antimony losses.

scholarly journals Optimization of Chemical Bath Deposited Mercury Chromium Sulphide Thin Films on Glass Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
H. B. Patil ◽  
S. V. Borse
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Parameters ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Edax Analysis ◽  
Cubic Structure ◽  
Semiconducting Thin Films

Semiconducting thin films of ternary () have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The X-ray diffraction deposited thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

Growth of Copper Telluride Thin Films using Electrodeposition

2018 ◽  
Vol 21 (1) ◽  
pp. 015-019
Author(s):  
P. Jeyakumar ◽  
S. Thanikaikarasan ◽  
B. Natarajan ◽  
T. Mahalingam ◽  
Luis Ixtlilco
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
Cyclic Voltammetric ◽  
Voltammetric Analysis ◽  
Copper Telluride ◽  
X Ray ◽  
Microstructural Parameters ◽  
Glass Substrates ◽  
Deposited Films

Copper Telluride thin films have been prepared on Fluorine doped Tin Oxide coated conducting glass substrates using electrodeposition technique. Cyclic voltammetric analysis has been carried out to analyze the growth mechanism of the deposited films. Thickness value of the deposited films has been estimated using Stylus profilometry. X-ray diffraction pattern revealed that the prepared films possess polycrystalline in nature. Microstructural parameters such as crystallite size, strain and dislocation density are evaluated using observed X-ray diffraction data. Optical absorption analysis showed that the prepared films are found to exhibit band gap value around 2.03 eV.

Effect of Second Complexing Agent of N2H4 on the Optical and Structural Properties of ZnS Thin Films

2013 ◽  
Vol 591 ◽  
pp. 297-300
Author(s):  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang ◽  
Xiao Yan Fei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Properties ◽  
Band Gaps ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Sphalerite Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Zns Films

ZnS films have been deposited on glass substrates by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that the prepared thin films from the solution using N2H4 as second complexing agent were thicker than those from the solution without adding N2H4 in; this is due to using second complexing agent of N2H4, the deposition mechanisms change which is conductive to heterogeneous deposition. When using N2H4 as second complexing agent, the crystallinity of ZnS thin films improved with a significant peak at 2θ=28.96°which can be assigned to the (111) reflection of the sphalerite structure. The transmittances of the prepared films from the solution adding N2H4 in as second complexing agent were over 85%, compared to those from the solution without N2H4 (over 95%). The band gaps of the ZnS films from the solution using N2H4 as second complexing agent were larger (about 4.0eV) than that from those from the solution without N2H4 (about 3.98eV), which indicated that the prepared ZnS films from the solution adding N2H4 in as second complexing agent were better used as buffer layer of solar cells with adequate optical properties. In short, using N2H4 as second complexing agent, can greatly improve the optical and structural properties of the ZnS thin films.

Growth of nanocrystals and thin films at the water–oil interface

2010 ◽  
Vol 368 (1927) ◽  
pp. 4313-4330 ◽  
Author(s):  
G. L. Stansfield ◽  
P. V. Vanitha ◽  
H. M. Johnston ◽  
D. Fan ◽  
H. AlQahtani ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Emission Spectroscopy ◽  
Single Step ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Transmission Electron ◽  
Solid Substrates ◽  
Absorption And Emission Spectroscopy

The use of the water–oil interface provides significant advantages in the synthesis of inorganic nanostructures. Employing the water–toluene interface, luminescent CdS nanocrystals have been obtained at a relatively modest temperature of 35 ° C. The diameters of the particulates can be varied between 1.0 and 5.0 nm. In addition, we have devised a new method for transferring thin films at the water–toluene interface onto solid substrates. Using this method, thin films consisting of Au and Ag nanocrystals spread over very large areas (square centimetres) are obtained in a single step. These films are directly usable as ingredients of functional devices. We show this by constructing a working amine sensor based on films of Au nanocrystals. The materials obtained have been characterized by X-ray diffraction, scanning and transmission electron microscopy, absorption and emission spectroscopy and charge transport measurements.

Electrosynthesis and Studies on CdZnSe Thin Films

2011 ◽  
Vol 15 (1) ◽  
pp. 37-42
Author(s):  
T. Mahalingam ◽  
V. Dhanasekaran ◽  
S. Rajendran ◽  
R. Chandramohan ◽  
Luis Ixtlilco ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Band Gap ◽  
Ph Value ◽  
Bath Temperature ◽  
X Ray Diffraction ◽  
Optical Studies ◽  
Sem Images ◽  
X Ray ◽  
Predominant Orientation ◽  
Diffraction Patterns

Electrodeposited CdZnSe thin films have been prepared at various bath temperatures. The thickness of the films was estimated between 850 nm and 1500 nm by stylus method. The X-ray diffraction patterns revealed that the polycrystalline nature with cubic structure of CdZnSe alloy thin films. Microstructural properties such as, crystallite size, dislocation density, microstrain and number of crystallites per unit area were calculated using predominant orientation of the films. SEM images revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. The surface roughness of the film was estimated using topographical studies. Optical properties of the film were analyzed from absorption and transmittance studies. Optical band gap of the films increased from 1.67 to 1.72 eV with the increase of bath temperature from 30 to 90℃. The optical constants (refractive index (n) and extinction coefficient (k)) of CdZnSe thin films were evaluated using optical studies.

Cadmium indium selenide semiconducting nanofibers by single step electrochemical route

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540024 ◽  
Author(s):  
B. G. Wagh ◽  
Anuradha B. Bhalerao ◽  
R. N. Bulakhe ◽  
C. D. Lokhande
Keyword(s):  
Thin Films ◽  
Selenium Dioxide ◽  
Indium Selenide ◽  
Single Step ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Ternary Semiconductor ◽  
Cadmium Indium

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

Influence of the Source Temperature on Properties of CdTe Thin Films by Close-Spaced Sublimation

2012 ◽  
Vol 590 ◽  
pp. 40-44 ◽  
Author(s):  
Xin Jie Shen ◽  
Cheng Wu Shi ◽  
Xiao Ping Zhan ◽  
Min Yao ◽  
Yan Ru Zhang
Keyword(s):  
Thin Films ◽  
Band Gaps ◽  
Cdte Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Source Temperature ◽  
Nir Absorption ◽  
Direct Band ◽  
Cdte Thin Films ◽  
Scanning Electron

In this paper，CdTe thin films were successfully grown at higher source temperatures of 650 °C and 700 °C using close-spaced sublimation(CSS) and characterized by energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis-NIR absorption spectra, respectively. The results indicated that the grain size of CdTe thin film increased from 1 μm to 5 μm with the increase of the source temperature from 650 °C to 700 °C. The direct band gaps of CdTe thin films prepared at different source temperatures of 650 °C and 700 °C were 1.44 and 1.43 eV, respectively.

scholarly journals Raman Investigations of Metal Chalcogenide Thin Films (A Short Review)

2019 ◽  
Vol 35 (Special Issue 1) ◽  
pp. 01-07 ◽  
Author(s):  
Ho Soonmin ◽  
Sreekanth Mandati ◽  
Ramkumar Chandran ◽  
Archana Mallik ◽  
Mohammad Arif Sobhan Bhuiyan ◽  
...  
Keyword(s):  
Thin Films ◽  
Short Review ◽  
Optical Absorption Coefficient ◽  
Electrode Position ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Direct Band ◽  
Deposition Techniques

Cu In Se2 thin films are very important semiconductor material for solar cell applications because of chemical stability, direct band gap and high optical absorption coefficient. In this work, these films have been prepared by using different deposition techniques such as electrodeposition, solvothermal, vacuum evaporation, hydrothermal and pulsed electrode position technique. Cu In Se2 thin films were fully characterized by using field emission scanning electron microscopy, X-ray diffraction, Energy dispersive X-ray analysis, atomic force microscopy, UV-Visible spectrophotometer and Raman spectroscopy in order to study physical properties.

Preparation of SnS Thin Films by Close-Spaced Sublimation at Different Source Temperatures

2012 ◽  
Vol 590 ◽  
pp. 148-152 ◽  
Author(s):  
Xiao Ping Zhan ◽  
Cheng Wu Shi ◽  
Xin Jie Shen ◽  
Min Yao ◽  
Yan Ru Zhang
Keyword(s):  
Thin Films ◽  
Band Gaps ◽  
X Ray Diffraction ◽  
X Ray ◽  
Direct Band Gap ◽  
Source Temperature ◽  
Nir Absorption ◽  
Structure Surface ◽  
Direct Band ◽  
Sns Thin Films

In this paper, thin films of tin monosulfide (SnS) were successfully prepared by close-spaced sublimation (CSS) on the source temperature of 650 °C and 720 °C using SnS powder as a source. The influence of the source temperature on the chemical composition, crystal structure, surface morphology, and direct band gap of SnS thin films was systemically investigated by energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis-NIR absorption spectra, respectively. The results showed that the SnS grain size increased from 3 μm to 20 μm by increase of the source temperature from 650 °C to 720 °C. The direct band gaps of SnS thin films prepared at different source temperatures 650 °C and 720 °C were 1.21 and 1.15 eV, respectively.

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