Mechanistic Study of the Role of One-Component Resins in Rubber-to-Brass Bonding in Tires

2004 ◽  
Vol 77 (5) ◽  
pp. 891-913 ◽  
Author(s):  
Pankaj Y. Patil ◽  
William J. van Ooij
Keyword(s):  
Reaction Time ◽  
Secondary Ion Mass Spectrometry ◽  
Gel Permeation Chromatography ◽  
Mechanistic Study ◽  
Coated Steel ◽  
Adhesion Promoters ◽  
Steel Cords ◽  
Adhesion Performance ◽  
Secondary Ion

Abstract Adhesion between rubber and brass-coated steel cords is enhanced by using resins as adhesion promoters. Experiments were carried out using a squalene liquid rubber modeling approach to study the effect of resins on the chemistry of the vulcanization reaction. The formation of new intermediates during vulcanization and changes in chemical concentrations with reaction time was studied using Gel Permeation Chromatography (GPC) analysis of the reacted squalene mixtures. Also, the effect of presence of resins on the surface of sulfidized brass cords was studied by analyzing the adhesion layer's elemental composition using the Electron Dispersive X-ray Spectroscopy (EDX) and Secondary Ion Mass Spectrometry (SIMS) characterization techniques. The changes in surface morphology of the adhesion layer with reaction time was noted by taking micrographs using the Scanning Electron Microscopy (SEM) technique. In this paper, a new mechanism is proposed for the role of resins in the improvement of initial and aged adhesion performance between rubber and brass-coated steel tire cords.

Trace nanoanalysis

1994 ◽  
Vol 52 ◽  
pp. 940-941
Author(s):  
D. E. Newbury ◽  
R. D. Leapman
Keyword(s):  
High Performance ◽  
Secondary Ion Mass Spectrometry ◽  
Detection Efficiency ◽  
Volume Element ◽  
And Performance ◽  
Trace Constituents ◽  
Secondary Ion ◽  
Concentration Levels ◽  
Structure Properties

Trace constituents, which can be very loosely defined as those present at concentration levels below 1 percent, often exert influence on structure, properties, and performance far greater than what might be estimated from their proportion alone. Defining the role of trace constituents in the microstructure, or indeed even determining their location, makes great demands on the available array of microanalytical tools. These demands become increasingly more challenging as the dimensions of the volume element to be probed become smaller. For example, a cubic volume element of silicon with an edge dimension of 1 micrometer contains approximately 5×1010 atoms. High performance secondary ion mass spectrometry (SIMS) can be used to measure trace constituents to levels of hundreds of parts per billion from such a volume element (e. g., detection of at least 100 atoms to give 10% reproducibility with an overall detection efficiency of 1%, considering ionization, transmission, and counting).

Article

1998 ◽  
Vol 76 (11) ◽  
pp. 1737-1745
Author(s):  
G R Carlow ◽  
M Zinke-Allmang
Keyword(s):  
Low Dose ◽  
Secondary Ion Mass Spectrometry ◽  
Dose Range ◽  
Secondary Peak ◽  
Main Peak ◽  
Full Description ◽  
Critical Dose ◽  
Secondary Ion ◽  
Post Implantation

We present results on the formation of buried silicide layers at ion implantation doses in the range of 1-60% of the critical dose for formation of a uniform layer. We emphasize observations for the low-dose range of 1-5% where the precipitate density is quite dilute. The Co redistribution during post-implant annealing is measured using Rutherford backscattering techniques and secondary ion mass spectrometry. Experimental observations during post-implantation annealing at 1000°C involves (i) a contraction of the Co depth profile for all doses, (ii) shifting of the peak of the profile towards the bulk, and (iii) formation of a secondary Co peak near the surface. The secondary peak is only present in samples implanted to greater than 3% of the critical dose. The interpretation of the shift of the main peak and the occurrence of the secondary peak requires a model exceeding the standard ripening model used previously to describe mesotaxy. We suggest that more recent ripening-based concepts allow for a full description of these observations with a minimum of parameters, particularly not requiring interaction with the complex defect profiles formed initially during implantation. Essential for this model is a proper inclusion of precipitate-precipitate interactions and the role of diffusion screening.Key words: silicide, Co implantation, mesotaxy, precipitate, ripening, screening.

Hydrogen Dynamics and Tee Distribution of H Sites in Undoped a-Si:H and a-Ge:H

1991 ◽  
Vol 219 ◽  
Author(s):  
R. Shinar ◽  
X.-L. Wu ◽  
S. Mitra ◽  
J. Shinar
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Long Range ◽  
Secondary Ion Mass Spectrometry ◽  
Ir Studies ◽  
Multiple Trapping ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Trapping Sites

ABSTRACTSecondary ion mass spectrometry and IR studies of long-range hydrogen motion in undoped a-Si:H and a-Ge:H of varying H content and microstructure are reviewed and discussed. In particular, their relation to the multiple trapping (MT) model, the role of microvoids, the significance of the Meyer-Neldel relation (MNR), and the nature of H sites is addressed. It is suggested that while the MT mechanism may be significant in a-Si:H of low H content Cfj, it is largely marginal in films where CH ≥ 10 at.% H and in a-Ge:H. Mono Si-H bonds on microvoid surfaces are apparently deep H trapping sites up to ∼ 400°C, but H is desorbed from such sites in a-Ge:H above 180°C. The MNR between the diffusional activation energy and prefactor is observed among the various a-Si:H and a-Ge:H, but its significance is questionable, and may be due to the MT mechanism only in low H content a-Si:H. The nature of the distribution of H sites is also discussed.

Sign in / Sign up

Export Citation Format

Share Document