Article

1998 ◽  
Vol 76 (11) ◽  
pp. 1737-1745
Author(s):  
G R Carlow ◽  
M Zinke-Allmang
Keyword(s):  
Low Dose ◽  
Secondary Ion Mass Spectrometry ◽  
Dose Range ◽  
Secondary Peak ◽  
Main Peak ◽  
Full Description ◽  
Critical Dose ◽  
Secondary Ion ◽  
Post Implantation

We present results on the formation of buried silicide layers at ion implantation doses in the range of 1-60% of the critical dose for formation of a uniform layer. We emphasize observations for the low-dose range of 1-5% where the precipitate density is quite dilute. The Co redistribution during post-implant annealing is measured using Rutherford backscattering techniques and secondary ion mass spectrometry. Experimental observations during post-implantation annealing at 1000°C involves (i) a contraction of the Co depth profile for all doses, (ii) shifting of the peak of the profile towards the bulk, and (iii) formation of a secondary Co peak near the surface. The secondary peak is only present in samples implanted to greater than 3% of the critical dose. The interpretation of the shift of the main peak and the occurrence of the secondary peak requires a model exceeding the standard ripening model used previously to describe mesotaxy. We suggest that more recent ripening-based concepts allow for a full description of these observations with a minimum of parameters, particularly not requiring interaction with the complex defect profiles formed initially during implantation. Essential for this model is a proper inclusion of precipitate-precipitate interactions and the role of diffusion screening.Key words: silicide, Co implantation, mesotaxy, precipitate, ripening, screening.

Trace nanoanalysis

1994 ◽  
Vol 52 ◽  
pp. 940-941
Author(s):  
D. E. Newbury ◽  
R. D. Leapman
Keyword(s):  
High Performance ◽  
Secondary Ion Mass Spectrometry ◽  
Detection Efficiency ◽  
Volume Element ◽  
And Performance ◽  
Trace Constituents ◽  
Secondary Ion ◽  
Concentration Levels ◽  
Structure Properties

Trace constituents, which can be very loosely defined as those present at concentration levels below 1 percent, often exert influence on structure, properties, and performance far greater than what might be estimated from their proportion alone. Defining the role of trace constituents in the microstructure, or indeed even determining their location, makes great demands on the available array of microanalytical tools. These demands become increasingly more challenging as the dimensions of the volume element to be probed become smaller. For example, a cubic volume element of silicon with an edge dimension of 1 micrometer contains approximately 5×1010 atoms. High performance secondary ion mass spectrometry (SIMS) can be used to measure trace constituents to levels of hundreds of parts per billion from such a volume element (e. g., detection of at least 100 atoms to give 10% reproducibility with an overall detection efficiency of 1%, considering ionization, transmission, and counting).

Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

1988 ◽  
Vol 144 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Novak ◽  
S. J. Pearton ◽  
A. R. Von Neida
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Gallium Phosphide ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Higher Temperature ◽  
Redistribution Of Hydrogen ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

Mechanistic Study of the Role of One-Component Resins in Rubber-to-Brass Bonding in Tires

2004 ◽  
Vol 77 (5) ◽  
pp. 891-913 ◽  
Author(s):  
Pankaj Y. Patil ◽  
William J. van Ooij
Keyword(s):  
Reaction Time ◽  
Secondary Ion Mass Spectrometry ◽  
Gel Permeation Chromatography ◽  
Mechanistic Study ◽  
Coated Steel ◽  
Adhesion Promoters ◽  
Steel Cords ◽  
Adhesion Performance ◽  
Secondary Ion

Abstract Adhesion between rubber and brass-coated steel cords is enhanced by using resins as adhesion promoters. Experiments were carried out using a squalene liquid rubber modeling approach to study the effect of resins on the chemistry of the vulcanization reaction. The formation of new intermediates during vulcanization and changes in chemical concentrations with reaction time was studied using Gel Permeation Chromatography (GPC) analysis of the reacted squalene mixtures. Also, the effect of presence of resins on the surface of sulfidized brass cords was studied by analyzing the adhesion layer's elemental composition using the Electron Dispersive X-ray Spectroscopy (EDX) and Secondary Ion Mass Spectrometry (SIMS) characterization techniques. The changes in surface morphology of the adhesion layer with reaction time was noted by taking micrographs using the Scanning Electron Microscopy (SEM) technique. In this paper, a new mechanism is proposed for the role of resins in the improvement of initial and aged adhesion performance between rubber and brass-coated steel tire cords.

scholarly journals Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
H. Tanoue ◽  
M. Gong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Surface Region ◽  
Structural And Electrical Properties ◽  
Transient Spectroscopy ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
A. G. Ulyashin ◽  
Yu. A. Bumay ◽  
W. R. Fahrner ◽  
A. I. Ivanovo ◽  
R. Job ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Ions ◽  
Enhanced Diffusion ◽  
Thermal Donor ◽  
Float Zone ◽  
Donor Formation ◽  
Effect Of Oxygen ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTThe effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

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