Performance Enhancement for Tsunami Wave Simulation using Hexagonal Cellular Automata

There are indisputable research supporting scientific argument that propagation of (tsunami) wave from intermediate depth towards shallower coastal area needs dispersive wave model. For tsunami wave simulation, efficiency of the numerical scheme is an important issue. In this paper, the two-layer non-hydrostatic model as developed previously in Pudjaprasetya et al. [2017] “A non-hydrostatic two-layer staggered scheme for transient waves due to anti-symmetric seabed thrust,” J. Earthquake Tsunami 11, 1–17, to study tsunami generation and propagation, is adopted. Restricting to 1+1 dimension, here, we focus on the performance of the scheme in simulating wave propagation in coastal areas, in particular predicting the run-up height. First, we conducted a simulation of harmonic wave over a sloping beach to conform the analytical shoreline motion by Carrier and Greenspan [1958] “Water waves of finite amplitude on a sloping beach,” J. Fluid Mech. 4, 97–109. The ability of the scheme in accommodating dispersion and non-linearity were shown via simulation of a solitary wave that propagates over a flat bottom. This solitary wave simulation provides an evaluation of the convergence aspect of the model. Further, several benchmark tests were conducted; a solitary wave over a sloping beach to mimic the experimental data by Synolakis [1986] “The run-up of solitary waves,” J. Fluid Mech. 185, 523–545, as well as solitary wave over a composite beach. Good agreement with laboratory data was obtained in terms of wave signal, whereas for relatively low amplitude, the solitary run-up height conforms the analytical formula. Moreover, the scheme is tested for simulating the Beji–Battjes experiment Beji, S. and Battjes, J. A. [1993] “Experimental investigation of wave propagation over a bar,” Coast. Eng. 19, 151–162. As well as wave focusing experiment by Kurnia et al. [2015] “Simulations for design and reconstruction of breaking waves in a wavetank,” Proc. ASME 2015 34th Int. Conf. Ocean, Offshore and Arctic Engineering, Newfoundland, Canada, 31 May–5 June 2015, pp. 2–7.

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Mindful sport performance enhancement: Mental training for athletes and coaches.

10.1037/0000048-000 ◽

2018 ◽

Cited By ~ 12

Author(s):

Keith A. Kaufman ◽

Carol R. Glass ◽

Timothy R. Pineau

Keyword(s):

Performance Enhancement ◽

Sport Performance ◽

Mental Training

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Performance Enhancement, Creativity and Mental Training

PsycEXTRA Dataset ◽

10.1037/e579872013-105 ◽

2003 ◽

Author(s):

M. Bar-Eli ◽

O. Lowengart ◽

J. Goldberg ◽

S. Epstein ◽

R. D. Fosbury

Keyword(s):

Performance Enhancement ◽

Mental Training

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Effective performance improvement of organic thin film transistors with multi-layer modifications

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020200138 ◽

2020 ◽

Vol 91 (3) ◽

pp. 30201

Author(s):

Hang Yu ◽

Jianlin Zhou ◽

Yuanyuan Hao ◽

Yao Ni

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Organic Thin Film Transistors ◽

Electrical Performance ◽

Hole Injection ◽

Organic Thin Film ◽

Effective Performance ◽

Significant Performance ◽

P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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