UV-Stability and Associated Failure Mechanism of Thin Film Automotive Paints

2006 ◽  
Author(s):  
Richard Nömayr
Keyword(s):  
Thin Film ◽  
Failure Mechanism

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

scholarly journals A new failure mechanism in thin film by collaborative fracture and delamination: Interacting duos of cracks

2015 ◽  
Vol 84 ◽  
pp. 214-229 ◽  
Author(s):  
Joël Marthelot ◽  
José Bico ◽  
Francisco Melo ◽  
Benoît Roman
Keyword(s):  
Thin Film ◽  
Failure Mechanism

Die Edge Thin Film Delamination on the Bottom Die of a Stacked Chip Scale Package (SCSP)

2005 ◽  
Author(s):  
Lito P. De la Rama ◽  
Dante G. Nuarin ◽  
Marilin H. Nery
Keyword(s):  
Thin Film ◽  
Failure Mechanism ◽  
Semiconductor Industry ◽  
Electronic Devices ◽  
Die Attach ◽  
Die Stacking ◽  
Active Circuit ◽  
Chip Scale Package ◽  
Increasing Demand ◽  
Small Form Factor

Abstract The increasing demand for high end electronic devices incorporating multiple functions in a small form factor leads to the widespread use of Stacked Chip Scale Packaging (SCSP) in the semiconductor industry. Multiple die stacking in various combinations have been achieved. However, new failure mechanisms are being observed due to new package stress characteristics. This paper will present a unique failure mechanism observed on the bottom die of a multiple die stack package. A detailed discussion of the failure mechanism showing the interaction between the presence of a high die attach adhesive fillet and the die singulation damage initiating a thin film delamination from the die edge towards the active circuit area causing electrical failures will be presented.

Observation and Modelling of Electromigration-Induced Void Growth In AI-Based Interconnects

1993 ◽  
Vol 308 ◽  
Author(s):  
O. Kraft ◽  
S. Bader ◽  
J.E. Sanchez ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Failure Mechanism ◽  
Void Growth ◽  
Pure Aluminum ◽  
Failure Mechanisms ◽  
Reflow Process ◽  
Shape Effects ◽  
Substantial Progress ◽  
Void Shape ◽  
Aluminum Interconnects

ABSTRACTAccelerated electromigation tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and examining the conductor lines using an SEM. Because the metal thin film was subjected to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.

scholarly journals Observation and Modelling of Electromigration-Induced Void growth in Al-Based Interconnects

1993 ◽  
Vol 309 ◽  
Author(s):  
O. Kraft ◽  
S. Bader ◽  
J.E. Sanchez ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Failure Mechanism ◽  
Void Growth ◽  
Pure Aluminum ◽  
Failure Mechanisms ◽  
Reflow Process ◽  
Shape Effects ◽  
Substantial Progress ◽  
Void Shape ◽  
Aluminum Interconnects

AbstractAccelerated electromigation tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and exanming the conductor lines using an SEM. Because the metal thin film was subjected to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.

Accelerated Degradation Test of Indium Tin Oxide (ITO) Thin Films Deposited by RF Magnetron Sputter

2006 ◽  
Vol 317-318 ◽  
pp. 577-580 ◽  
Author(s):  
Hyun Gyu Shin ◽  
Yong Nam Kim ◽  
Jun Kwang Song ◽  
Hee Soo Lee
Keyword(s):  
Thin Film ◽  
Failure Mechanism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Charge Carrier Concentration ◽  
Accelerated Degradation ◽  
Short Period ◽  
Degradation Test ◽  
Accelerated Degradation Test

Thermal degradation of indium tin oxide (ITO) thin film has been investigated. ITO thin film was fabricated on glass substrate using RF magnetron sputtering and was characterized. The resistivity of the film which was thermally degraded at high temperatures in air atmosphere was increased highly. Thermally-degraded specimen was analyzed using XPS and Hall measurement to reveal failure mechanism. Result showed that failure mechanism was the decrease in charge carrier concentration and mobility due to oxygen diffusion and chemisorption. Accelerated degradation test (ADT) was performed to predict the lifetime of ITO thin film. The lifetime under normal operating condition could be predicted via statistical analysis and modeling of data acquired from ADT of a short period.

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