scholarly journals Observation and Modelling of Electromigration-Induced Void growth in Al-Based Interconnects

1993 ◽  
Vol 309 ◽  
Author(s):  
O. Kraft ◽  
S. Bader ◽  
J.E. Sanchez ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Failure Mechanism ◽  
Void Growth ◽  
Pure Aluminum ◽  
Failure Mechanisms ◽  
Reflow Process ◽  
Shape Effects ◽  
Substantial Progress ◽  
Void Shape ◽  
Aluminum Interconnects

AbstractAccelerated electromigation tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and exanming the conductor lines using an SEM. Because the metal thin film was subjected to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.

Observation and Modelling of Electromigration-Induced Void Growth In AI-Based Interconnects

1993 ◽  
Vol 308 ◽  
Author(s):  
O. Kraft ◽  
S. Bader ◽  
J.E. Sanchez ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Failure Mechanism ◽  
Void Growth ◽  
Pure Aluminum ◽  
Failure Mechanisms ◽  
Reflow Process ◽  
Shape Effects ◽  
Substantial Progress ◽  
Void Shape ◽  
Aluminum Interconnects

ABSTRACTAccelerated electromigation tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and examining the conductor lines using an SEM. Because the metal thin film was subjected to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Interconnect Failure Mechanism Maps for Different Metallization Materials and Processes

1999 ◽  
Vol 563 ◽  
Author(s):  
V. K. Andleigh ◽  
Y. J. Park ◽  
C. V. Thompson
Keyword(s):  
Failure Mechanism ◽  
Current Density ◽  
Void Growth ◽  
Void Nucleation ◽  
Failure Mechanisms ◽  
Line Length ◽  
Test Results ◽  
Interconnect Reliability ◽  
Current Densities ◽  
Service Conditions

AbstractA tool for simulation of electromigration and electromigration-induced damage, MIT/EmSim, has been used to investigate interconnect reliability, focusing on transitions in failure mechanisms associated with void nucleation, growth, and growth saturation. Conventional scaling of electromigration test results assume that the median time to electromigration-induced failure scales with the current density j to the power −n. The effects of transitions in failure mechanisms have been studied by characterizing the apparent current density exponent. When failure is limited by void nucleation, n=2 scaling is observed, and when failure requires substantial void growth, n=1 scaling is observed. When lines end at diffusion barriers such as W or liner-filled vias, void growth saturates in short lines at low current densities, and, depending on the failure criterion, lines under these conditions can be ‘immortal’. As growth saturates, apparent current density exponents increase above 2. Failure mechanism maps can be constructed to illustrate the failure mechanisms and scaling behavior as a function of line length and current density. Failure maps can be used in accurately scaling test results to service conditions, to suggest layout strategies for optimized circuit reliability, and to assess the reliability of new interconnect materials and structures.

Failure Mechanisms Analysis of All-Solid-State Thin Film Microbatteries from an Extended Electrochemical Reliability Study

2015 ◽  
Vol 162 (14) ◽  
pp. A2847-A2853 ◽  
Author(s):  
Nathanaël Grillon ◽  
Emilien Bouyssou ◽  
Sébastien Jacques ◽  
Gaël Gautier
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Failure Mechanisms ◽  
Reliability Study

Acceleration Factors and Life Predictions

2020 ◽  
Vol 2020 (1) ◽  
pp. 000100-000105
Author(s):  
P.E. Chris South
Keyword(s):  
Failure Mechanism ◽  
Confidence Level ◽  
Failure Mechanisms ◽  
Software Tool ◽  
Acceleration Factor ◽  
Accelerated Life Test ◽  
Time To Failure ◽  
Confidence Bounds ◽  
Life Predictions ◽  
Equivalent Field

Abstract Acceleration factors (AF) are key to designing an effective accelerated life test (ALT). They represent the ratio of the time in field to the time in test for a particular event to occur (typically a failure event related to a specific failure mechanism). Time to failure for a device generally correlates with the amount of stress applied (the higher the stress, the quicker the device will fail), and failure models exist to mathematically define that correlation for various failure mechanisms. This allows for use of a higher stress in test than in the field, thereby providing an acceleration factor that shortens the time in test to demonstrate a failure-free time period. ALT can take the form of qualitative or quantitative testing. The latter is used to determine the life characteristics of the device with some reliability and confidence level. Usage rate acceleration and higher stress acceleration can be used. It is important to consider the design limits of the device based on its specification and material properties, and limit the stress levels in test so as not to induce failure mechanisms that the device would not otherwise have experienced in the field. ALT results are used to make life predictions for the device tested. With no failures, the test results demonstrate the required reliability and confidence level metrics for the failure mechanism of interest. With several failures, a reliability software tool can be used with the appropriate analysis method, rank method, and confidence bounds method chosen in order to extrapolate to an expected life in test. The equivalent field life is based on multiplying the expected life in test by the AF. If the field stress and/or test stress are not constant, there are multiple acceleration factors to utilize. As a result, an equivalent acceleration factor needs to be calculated and used as the AF when predicting equivalent field life.

Failure mechanisms in two-layer undrained slopes

2020 ◽  
Vol 57 (10) ◽  
pp. 1617-1621
Author(s):  
Shuangfeng Guo ◽  
D.V. Griffiths
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Slope Angle ◽  
Strength Ratio ◽  
The Finite Element Method ◽  
Stability Analyses ◽  
Shallow Failure ◽  
Insight Into

This note presents results of stability analyses of two-layer undrained slopes by the finite element method. The study focuses on the circumstances under which either deep or shallow failure mechanisms occur, as a function of the strength ratio of the layers, slope angle, and foundation depth ratio. Improved knowledge of the location of the critical failure mechanism(s) in two-layer systems will give engineers better insight into where to focus their attention in terms or remediation or reinforcement to preserve stability.

Failure mechanisms limiting the lifetime of thin film photovoltaic semi fabricates with alternative moisture barrier foils

2019 ◽  
Author(s):  
Aldo Kingma ◽  
Peter Toonssen ◽  
Shruti Kulkarni ◽  
Dorrit Roosen-Melsen ◽  
Monique van den Nieuwenhof ◽  
...  
Keyword(s):  
Thin Film ◽  
Failure Mechanisms ◽  
Moisture Barrier

Coating Technique’s Application in the Improvement of Mechanical Behavior of Polyester Textile in Corrosive Environment

2011 ◽  
Vol 311-313 ◽  
pp. 1814-1817
Author(s):  
Guo Ning Liu ◽  
Hua Dong Zhao ◽  
He Zheng Wang ◽  
Jing Ru Dong ◽  
Ming Hao Zhao
Keyword(s):  
Thin Film ◽  
Mechanical Behavior ◽  
Pure Aluminum ◽  
Middle Layer ◽  
Extreme Conditions ◽  
High Concentration ◽  
Time Period ◽  
High Ozone Concentration ◽  
Polyester Textile

Polyester textiles usually have excellent mechanical properties. However, their mechanical behaviors under extreme conditions such as in the environment with high ozone concentration usually decay after a certain time period. Aiming at increasing the mechanical behavior of commercial polyester textiles under extreme conditions, a PET thin film coated with pure aluminum (Al) on its surface has been introduced as the top layer of the fabricated material with polyester textile as the middle layer. Main purpose of the study is to evaluate the role of aluminum thin film on the surface in improving the mechanical behavior of the polyester textiles after they have been exposed in the environment with extremely high concentration of ozone gas.

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