Rutherford Backscattering Spectroscopic Study of the Failure Mechanism of  ( RuO2 + TiO2 )  / Ti Thin Film Electrodes in  H 2 SO 4 Solutions

1997 ◽  
Vol 144 (4) ◽  
pp. 1289-1295 ◽  
Author(s):  
C. E. Vallet ◽  
B. V. Tilak ◽  
R. A. Zuhr ◽  
C.‐P. Chen
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


2021 ◽  
Vol 45 (7) ◽  
pp. 3469-3478
Author(s):  
Zongyu Liu ◽  
Ying Tian ◽  
Xuewei Dong ◽  
Xiaohui Zhou ◽  
Xiao Liu ◽  
...  

A Ni/CTF was used as the cathode for electroreduction of imidacloprid, achieving a 92.1% removal efficiency for the electroreduction of imidacloprid.


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