scholarly journals New Aspect on CVD Diamond Films. Electrochemical Applications of Conductive Diamond Thin Films.

1999 ◽  
Vol 50 (6) ◽  
pp. 486-493 ◽  
Author(s):  
Ichizo YAGI ◽  
Akira FUJISHIMA
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Electrochemical Applications ◽  
Diamond Thin Films

Measuring the Adhesion of Diamond Thin Films to Substrates Using the Blister Test

1995 ◽  
Vol 383 ◽  
Author(s):  
Jim Sizemore ◽  
R. J. Hohlfelder ◽  
J. J. Vlassak ◽  
W. D. Nix
Keyword(s):  
Thin Films ◽  
Test Data ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Simple Equation ◽  
Testing Technique ◽  
Blister Test ◽  
Plasma Enhanced Cvd ◽  
Si Substrates ◽  
Diamond Thin Films

ABSTRACTIt is shown that the blister testing technique can be used to measure the adhesion of thin films to their substrates. A brief discussion of blister test mechanics is presented here, leading to a simple equation relating adhesion to the height of the blister and the pressure causing it to grow. Blister test data for plasma-enhanced CVD diamond films on Si substrates have been analyzed using this relation. The tests show adhesion energies of 1.8– 2.6 J/m2.

Growth of (100) oriented diamond thin films on ball structure diamond-like particles

1992 ◽  
Vol 7 (7) ◽  
pp. 1606-1609 ◽  
Author(s):  
Lee Chow ◽  
Alan Horner ◽  
Hooman Sakouri ◽  
Bahram Roughani ◽  
Swaminatha Sundaram
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Diamond Films ◽  
Cvd Diamond ◽  
X Ray ◽  
Oriented Films ◽  
Diamond Thin Films

The morphology of typical CVD diamond thin films has been shown to be controlled by the concentration of methane during deposition. For example, for CH4 concentrations c < 0.4% the (111) faces dominate, while at 0.4% < c < 1.2% (100) faces dominate. Here we showed that the (100) oriented diamond films can be grown on top of the microcrystalline ball-like particles under suitable conditions. These (100) oriented diamond films are grown under the condition of 1.5% methane in hydrogen, substrate temperature of 680 °C–750 °C, and pressure of 30–80 Torr. The bombardment of the diamond thin films by ions in the plasma is believed to be an important factor for the formation of (100) oriented films on top of the ball-like particles. SEM, Raman, and x-ray techniques were used to characterize the deposited (100) oriented diamond thin films.

Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

scholarly journals Thermal Characterization of Polycrystalline CVD Diamond Thin Films

2009 ◽  
Vol 1 (1) ◽  
pp. 609-613 ◽  
Author(s):  
S. Lani ◽  
C. Ataman ◽  
W. Noell ◽  
D. Briand ◽  
N. de Rooij
Keyword(s):  
Thin Films ◽  
Thermal Characterization ◽  
Cvd Diamond ◽  
Diamond Thin Films

Quantitative Adhesion Measures of Diamond Films Using A Blister Test

2007 ◽  
Vol 329 ◽  
pp. 551-556
Author(s):  
Xiao Gang Jian ◽  
L.D. Shi ◽  
Ming Chen ◽  
Fang Hong Sun
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Adhesive Strength ◽  
Diamond Films ◽  
Free Standing ◽  
Adhesion Properties ◽  
Blister Test ◽  
Diamond Thin Film ◽  
Diamond Thin Films ◽  
Micrometer Scale

Adhesion properties of diamond thin films are essential to their performance in technical applications. To obtain the adhesive strength precisely and quantitatively has been the frontier issue to the related scientists and engineers. In this paper, a new experimental equipment for blister tests was designed purposely and fabricated considering related influencing facts. A free-standing window of diamond thin film with the support of silicon wafer was obtained by the aid of photolithography and anisotropic wet etching technology so as to improve the precision of quantitative adhesion measures of diamond films. The mechanics for calculating the quantitative driving force of blister-induced delamination of diamond thin film is presented, which is on base of intensive modeling and simulation. The laser interferometer measurement with fine solution was used to pick up dynamic signals of diamond thin film bulge deformation in micrometer scale and the relationship demonstration of stress to strain of the diamond thin film was available, as a consequence, the adhesive strength could be obtained precisely and quantitatively by the valid model. The paper confirms the accessibility to precise quantitative adhesion measures of diamond films and the results will be beneficial to wide application of diamond thin films in the related fields.

Intra- and Intergranular Fracture of Diamond Thin Films

1989 ◽  
Vol 162 ◽  
Author(s):  
H. A. Hoff ◽  
A. A. Morrish ◽  
W. A. Carrington ◽  
J. E. Butler ◽  
B. B. Rath
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Relative Strength ◽  
Ambient Atmosphere ◽  
Transmission Electron ◽  
Welding Torch ◽  
Diamond Thin Films ◽  
Inherent Strength

ABSTRACTDiamond thin films have been synthesized at low pressures by chemical vapor deposition (CVD) and, recently, at ambient atmosphere with an oxygen-acetylene welding torch. By the application of appropriate thermal or mechanical stresses to the substrate, the diamond films can be delaminated. The delaminated films which are only a few microns thick have been fractured by manual bending. Scanning electron microscopy (SEM) examination of fractured CVD diamond films shows the presence of primarily intragranular fracture attesting to the inherent strength of the films. Using transmission electron microscopy (TEM), twinning and stacking faults are seen within the crystallites of the films along the fracture surfaces. By combining SEM and TEM examination, the relative degree of intragranular fracture found in films synthesized by both CVD and oxygen-acetylene torch has been investigated. Possible mechanisms for the intragranular fracture and the relative strength of such films are discussed.

Microstructure evolution and non-diamond carbon incorporation in CVD diamond thin films grown at low substrate temperatures

1997 ◽  
Vol 172 (3-4) ◽  
pp. 404-415 ◽  
Author(s):  
J. Michler ◽  
J. Stiegler ◽  
Y. von Kaenel ◽  
P. Moeckli ◽  
W. Dorsch ◽  
...  
Keyword(s):  
Thin Films ◽  
Microstructure Evolution ◽  
Cvd Diamond ◽  
Carbon Incorporation ◽  
Diamond Thin Films ◽  
Substrate Temperatures

Remote Ecr Plasma Deposition of Diamond Thin Films from Water-Methanol Mixtures

1992 ◽  
Vol 242 ◽  
Author(s):  
R. K. Singh ◽  
D. Gilbert ◽  
R. Tellshow ◽  
R. Koba ◽  
R. Ochoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Diamond Films ◽  
Processing Parameters ◽  
Gas Composition ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Bonding Characteristics

ABSTRACTWe have applied an electron cyclotron resonance technique to deposit diamond thin films on various substrates under remote plasma, low temperature (600°C) and low pressure (60 mTorr) conditions. Diamond films were grown on different substrates (silicon, molybdenum) with varying concentrations of precursor gases (methanol and water). A positive substrate bias (50 to 60 V) was found to be essential for the growth of diamond films onto substrates positioned 16 cm below the ECR plasma. The films were characterized by Raman, X-ray diffraction and scanning electron microscopy for microstructure, phase purity and chemical bonding characteristics. The effect of various processing parameters including gas pressure, gas composition, substrate temperature and bias have also been analyzed.

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