Hermetic Electrical Feedthroughs Based on the Diffusion of Platinum into Silicon

2014 ◽  
Vol 2014 (1) ◽  
pp. 000729-000734 ◽  
Author(s):  
Linda Rudmann ◽  
Juan S. Ordonez ◽  
Hans Zappe ◽  
Thomas Stieglitz
Keyword(s):  
Electrical Properties ◽  
Bulk Material ◽  
Hydrogen Atmosphere ◽  
Silicon Substrates ◽  
Electrical Behavior ◽  
Pure Nitrogen ◽  
Local Increase ◽  
Type Silicon ◽  
Novel Approach ◽  
Conductive Substrate

Within this paper a novel approach for the development of hermetic electrical feedthroughs is introduced. So far, every vertical feedthrough induces at the feedthroughs' interfaces possible paths for water to leak across the hermetic barrier into the hermetic package. The presented approach is based on the diffusion of platinum into silicon, locally changing the electrical behavior of the substrate due to the induced impurities. This method avoids destroying the bulk material, in this case silicon, preserving the hermetic barrier environment. Different n-type silicon substrates were investigated for their usability through various diffusion experiments under two gas atmospheres: Argon/hydrogen and pure nitrogen. A significant change in silicon behavior could be shown for one of the used substrates. The current flowing through the bulk could be decreased by a factor of around 12 for an argon/hydrogen atmosphere and by around 10 for pure nitrogen. The current directly correlates with a local increase of the substrates' resistance, demonstrating the possibility of adapting the electrical properties of a substrate to create insulating areas within a conductive substrate.

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

2010 ◽  
Vol 645-648 ◽  
pp. 865-868 ◽  
Author(s):  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Daniel Alquier ◽  
M. Italia ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Experimental Data ◽  
Theoretical Study ◽  
Stress Measurement ◽  
Bulk Material ◽  
Raman Shift ◽  
Silicon Substrates ◽  
Free Standing ◽  
Element Analysis ◽  
Micro Fabrication ◽  
Sic Films

The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. In this work a comparison between single crystal and poly crystal 3C-SiC micro-machined structures will be presented. The free-standing structures realized (cantilevers and membrane) are also a suitable method for residual field stress investigation in 3C-SiC films. Measurement of the Raman shift indicates that the mono and poly-crystal 3C-SiC structures release the stress in different ways. Finite element analysis was performed to determine the stress field inside the films and provided a good fit to the experimental data. A comprehensive experimental and theoretical study of 3C-SiC MEMS structures has been performed and is presented.

Preparation of LaNi5 films and their electrical properties under a hydrogen atmosphere

1985 ◽  
Vol 108 (1) ◽  
pp. 107-114 ◽  
Author(s):  
G. Adachi ◽  
H. Sakaguchi ◽  
K. Niki ◽  
N. Nagai ◽  
J. Shimokawa
Keyword(s):  
Electrical Properties ◽  
Hydrogen Atmosphere

scholarly journals An Investigation of the Electrical Behavior of Thermally Sprayed Aluminum Oxide

1996 ◽  
Author(s):  
C.J. Swindeman ◽  
R.D. Seals ◽  
W.P. Murray ◽  
M.H. Cooper ◽  
R.L. White
Keyword(s):  
Electrical Properties ◽  
Aluminum Oxide ◽  
Dielectric Constants ◽  
Electrical Behavior ◽  
X Ray Diffraction ◽  
Heating And Cooling ◽  
Thermally Sprayed Aluminum ◽  
Plasma Sprayed ◽  
And Control ◽  
Steel Substrates

Abstract Electrical properties of plasma-sprayed aluminum oxide coatings were measured at temperatures up to 600 °C. High purity (>99.5 wt% pure Al2O3) alumina powders were plasma-sprayed on stainless steel substrates over a range of power levels, using two gun configurations designed to attain different spray velocities. Key electrical properties were measured to evaluate the resultant coatings as potential insulating materials for electrostatic chucks (ESCs) being developed for semiconductor manufacturing. Electrical resistivity of all coatings was measured under vacuum upon heating and cooling over a temperature range of 20 to 600 °C. Dielectric constants were also measured under the same test conditions. X-ray diffraction was performed to examine phase formation in the coatings. Results show the importance of powder composition and careful selection and control of spray conditions for optimizing electrical behavior in plasma-sprayed aluminum oxide, and point to the need for further studies to characterize the relationship between high temperature electrical properties, measured plasma-spray variables, and specific microstructural and compositional coating features.

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

Bias voltage dependent electrochemical impedance spectroscopy of p- and n-type silicon substrates

2005 ◽  
Vol 51 (4) ◽  
pp. 665-676 ◽  
Author(s):  
M. Chemla ◽  
J.F. Dufrêche ◽  
I. Darolles ◽  
F. Rouelle ◽  
D. Devilliers ◽  
...  
Keyword(s):  
Electrochemical Impedance Spectroscopy ◽  
Impedance Spectroscopy ◽  
Bias Voltage ◽  
Electrochemical Impedance ◽  
Silicon Substrates ◽  
Type Silicon ◽  
Voltage Dependent

Evidence of different conduction channels in bulk ZnO using f-MEMSA Analysis of transport properties

2007 ◽  
Vol 1035 ◽  
Author(s):  
Celine Tavares Chevalier ◽  
J. Rothman ◽  
G. Feuillet
Keyword(s):  
Electrical Properties ◽  
Transport Properties ◽  
Spectrum Analysis ◽  
Bulk Material ◽  
Mobility Spectrum ◽  
Annealing Conditions ◽  
Conductive Channel ◽  
Hall Effect Measurements ◽  
Heteroepitaxial Layers

AbstractThe characterization of transport properties in Zn0 is known to be challenging, particularly due to surface (in the case of bulk) or interface (in the case of heteroepitaxial layers) conduction channels, which puts severe limitations on the interpretation of Hall Effect measurements. In this communication, we report on the study of transport properties of n-type ZnO bulk material using Hall mobility spectrum analysis estimated through the algorithm known as full Maximum Entropy Mobility Spectrum Analysis, f-MEMSA. The electrical properties of bulk Zn0 are measured using a Hall setup for applied magnetic fields µ0H in the range 0T-9T and for temperatures between 50K and 400K. The f-MEMSA analysis highlights the existence of two types of conduction channels in the considered ZnO substrate. We also show that surface conductive channel can be suppressed using appropriate annealing conditions.

Sign in / Sign up

Export Citation Format

Share Document