Fabrication and characterization of advanced through glass via interconnects

2016 ◽  
Vol 2016 (1) ◽  
pp. 000288-000292
Author(s):  
Timothy Clingenpeel ◽  
Arian Rahimi ◽  
Seahee Hwangbo ◽  
Yong-Kyu Yoon ◽  
Aric Shorey
Keyword(s):  
Radio Frequency ◽  
Circuit Model ◽  
Fabrication Process ◽  
Electrical Characteristics ◽  
Frequency Range ◽  
High Quality ◽  
Measurement Results ◽  
Fabrication And Characterization ◽  
Copper Structure

Abstract This work presents the fabrication process, electrical characteristics, and circuit model of through glass via (TGV) structures consisting of TGV holes with each diameter of 100 μm and different conductors including copper and composite in the frequency range of 300 kHz to 20 GHz. The Cu/NiFe superlattice metaconductors in combination with high-quality glass (Corning SGW3) are intended to reduce radio-frequency losses especially in 10 GHz and above for next generation communication applications such as 5G communications. The measured results of the copper structure are compared to simulated results. Superlattice metaconductor results will be presented. Based on the simulation and measurement results, a circuit model is demonstrated.

Characterization of a Non-Interdigitated Comb Drive

2018 ◽  
Author(s):  
Mary Gopanchuk ◽  
Mohamed Arabi ◽  
N. Nelson-Fitzpatrick ◽  
Majed S. Al-Ghamdi ◽  
Eihab Abdel-Rahman ◽  
...  
Keyword(s):  
Quality Factor ◽  
Fundamental Frequency ◽  
High Quality Factor ◽  
Silicon On Insulator ◽  
Comb Drive ◽  
High Quality ◽  
Sensor Applications ◽  
Fabrication And Characterization

This paper reports on the design, fabrication, and characterization of non-interdigitated comb drive actuators in Silicon-on-Insulator (SOI) wafers, using a single mask surface microma-chining process. The response of the actuator is analyzed numerically and experimentally. The results show at the fundamental frequency; it behaves as a longitudinal comb drive actuator. At a higher frequency, it exhibits a high-quality factor which is appropriate for sensor applications.

Fabrication and characterization of high-quality waveguide-mode resonant optical filters

2003 ◽  
Vol 83 (16) ◽  
pp. 3248-3250 ◽  
Author(s):  
P. S. Priambodo ◽  
T. A. Maldonado ◽  
R. Magnusson
Keyword(s):  
Waveguide Mode ◽  
Optical Filters ◽  
High Quality ◽  
Fabrication And Characterization

Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes

2011 ◽  
Vol 520 (1) ◽  
pp. 445-447 ◽  
Author(s):  
Hao Zheng ◽  
Z.X. Mei ◽  
Z.Q. Zeng ◽  
Y.Z. Liu ◽  
L.W. Guo ◽  
...  
Keyword(s):  
Light Emission ◽  
High Quality ◽  
Fabrication And Characterization

Fabrication and characterization of high-quality (Hg,Re)Ba2CaCu2Oythin films on LSAT substrates

2002 ◽  
Vol 15 (12) ◽  
pp. 1706-1710 ◽  
Author(s):  
A Ogawa ◽  
N Inoue ◽  
T Sugano ◽  
S Adachi ◽  
K Suzuki ◽  
...  
Keyword(s):  
High Quality ◽  
Fabrication And Characterization

Fabrication and characterization of superhard tungsten boride layers deposited by radio frequency magnetron sputtering

2016 ◽  
Vol 42 (10) ◽  
pp. 12221-12230 ◽  
Author(s):  
Justyna Chrzanowska ◽  
Łukasz Kurpaska ◽  
Maciej Giżyński ◽  
Jacek Hoffman ◽  
Zygmunt Szymański ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Tungsten Boride ◽  
Fabrication And Characterization

Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

2014 ◽  
Vol 778-780 ◽  
pp. 800-803 ◽  
Author(s):  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Rui Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Level ◽  
Electrical Characteristics ◽  
Edge Termination ◽  
Fabrication And Characterization ◽  
Drift Layer

4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 μm with a doping of 9×1014cm−3. The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4V at JF=80 A/cm2

scholarly journals Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

2020 ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Fuhua Yang ◽  
Xiaodong Wang
Keyword(s):  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Etching Process ◽  
Photon Absorption ◽  
Hydrophobic Property ◽  
Water Contact ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Fabrication And Characterization

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process，with no extra lithography process. The fabricated sample has a low Reflectance value，close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

Fabrication and Characterization of High-Quality Perovskite Films with Large Crystal Grains

2017 ◽  
Vol 8 (4) ◽  
pp. 720-726 ◽  
Author(s):  
Teng Ma ◽  
Qiwu Zhang ◽  
Daisuke Tadaki ◽  
Ayumi Hirano-Iwata ◽  
Michio Niwano
Keyword(s):  
Large Crystal ◽  
High Quality ◽  
Fabrication And Characterization ◽  
Crystal Grains
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